Molecular Beam Epitaxy of Two-Dimensional GaTe Nanostructures on GaAs(001) Substrates: Implication for Near-Infrared Photodetection

2021 ◽  
Author(s):  
Sa Hoang Huynh ◽  
Nhu Quynh Diep ◽  
Tan Vinh Le ◽  
Ssu Kuan Wu ◽  
Cheng Wei Liu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Near Infrared ◽  
Two Dimensional ◽  
Infrared Photodetection

Near-Infrared Photodetection with Molecular Beam Epitaxy Grown Extended InGaAs

2005 ◽  
Vol 883 ◽  
Author(s):  
Jun-Xian Fu ◽  
Xiaojun Yu ◽  
Yu-Hsuan Kuo ◽  
James S Harris
Keyword(s):  
Electron Microscope ◽  
Molecular Beam Epitaxy ◽  
Optical Absorption ◽  
Molecular Beam ◽  
Near Infrared ◽  
Absorption Measurement ◽  
X Ray Diffraction ◽  
X Ray ◽  
Optical Absorption Measurement ◽  
Infrared Photodetection

AbstractStrain-balanced InxGa1-xAs/InyGa1-yAs superlattices and fractional monolayer In0.532Ga0.468As/InAs superlattices were grown by solid-source molecular beam epitaxy (SSMBE) in order to extend the photodetection wavelength range beyond 1.7μm. Material qualities were characterized by transmitted electron microscope (TEM), X-ray diffraction (XRD), roomtemperature photoluminesecence (RTPL) and optical absorption measurement.

GaSb layers with low defect density deposited on (001) GaAs substrate in two-dimensional growth mode using molecular beam epitaxy

2019 ◽  
Vol 19 (4) ◽  
pp. 542-547
Author(s):  
Agata Jasik ◽  
Iwona Sankowska ◽  
Andrzej Wawro ◽  
Jacek Ratajczak ◽  
Dariusz Smoczyński ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Gaas Substrate ◽  
Molecular Beam ◽  
Defect Density ◽  
Growth Mode ◽  
Two Dimensional ◽  
Dimensional Growth

A Study of GaAs1–xSbx Axial Nanowires Grown on Monolayer Graphene by Ga-Assisted Molecular Beam Epitaxy for Flexible Near-Infrared Photodetectors

2019 ◽  
Vol 2 (7) ◽  
pp. 4528-4537 ◽  
Author(s):  
Surya Nalamati ◽  
Manish Sharma ◽  
Prithviraj Deshmukh ◽  
Jeffrey Kronz ◽  
Robert Lavelle ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Near Infrared ◽  
Monolayer Graphene ◽  
Infrared Photodetectors

Molecular-Beam Epitaxy of Two-Dimensional In2Se3 and Its Giant Electroresistance Switching in Ferroresistive Memory Junction

Nano Letters ◽  
2018 ◽  
Vol 18 (10) ◽  
pp. 6340-6346 ◽  
Author(s):  
Sock Mui Poh ◽  
Sherman Jun Rong Tan ◽  
Han Wang ◽  
Peng Song ◽  
Irfan H. Abidi ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Two Dimensional

Molecular beam epitaxy fabrication of two-dimensional materials

2020 ◽  
pp. 103-134 ◽  
Author(s):  
Peng Cheng ◽  
Wen Zhang ◽  
Lei Zhang ◽  
Jian Gou ◽  
Ping Kwan Johnny Wong ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Two Dimensional ◽  
Two Dimensional Materials

A Comparison of (100) Hg1−x Cdx Te and Hg1−x ZnxTe Grown By Molecular Beam Epitaxy

1987 ◽  
Vol 102 ◽  
Author(s):  
R. D. Feldman ◽  
R. F. Austin ◽  
P. M. Bridenbaugh
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Near Infrared ◽  
Wave Length ◽  
High Electron ◽  
Mbe Growth ◽  
Suitable Material ◽  
Zn Content ◽  
Length Range ◽  
Very High

ABSTRACTFilms of HgCdTe with x < 0.6 and of HgZnTe with x < 0.26 have been grown by molecular beam epitaxy (MBE). Very high electron mobilities have been achieved for both materials in the small bandgap region. Hall mobilities at 77K reach 4.8 × 105 cm2 /V-s for Hg0 87 Zn0.13 Te, and 3.1 × 105 cm2/V-s for Hg0.87 Zn0.13 Te. HgCdTe growth was easily extended to the 1.5 – 3 μm wave length range. Attempts to extend HgZnTe to these bandgaps were unsuccessful due to defects that are induced by surface roughness in high Zn-content films. These results suggest that HgCdTe is the more suitable material for MBE growth for near infrared applications.

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