Charge Carrier Recombination at Perovskite/Hole Transport Layer Interfaces Monitored by Time-Resolved Spectroscopy

2021 ◽  
pp. 4155-4164
Author(s):  
Jafar I. Khan ◽  
Furkan H. Isikgor ◽  
Esma Ugur ◽  
Waseem Raja ◽  
George T. Harrison ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Transport Layer ◽  
Time Resolved ◽  
Time Resolved Spectroscopy ◽  
Carrier Recombination ◽  
Charge Carrier Recombination

scholarly journals Revealing the Band Structure of FAPI Quantum Dot Film and Its Interfaces with Electron and Hole Transport Layer Using Time Resolved Photoemission

2020 ◽  
Vol 124 (6) ◽  
pp. 3873-3880 ◽  
Author(s):  
Dylan Amelot ◽  
Prachi Rastogi ◽  
Bertille Martinez ◽  
Charlie Gréboval ◽  
Clément Livache ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Band Structure ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Transport Layer ◽  
Time Resolved

scholarly journals Perovskite Solar Cells Yielding Reproducible Photovoltage of 1.20 V

Research ◽  
2019 ◽  
Vol 2019 ◽  
pp. 1-9 ◽  
Author(s):  
Essa A. Alharbi ◽  
M. Ibrahim Dar ◽  
Neha Arora ◽  
Mohammad Hayal Alotaibi ◽  
Yahya A. Alzhrani ◽  
...  
Keyword(s):  
Solar Cells ◽  
Charge Carrier ◽  
Perovskite Solar Cells ◽  
Precursor Solution ◽  
Nonradiative Recombination ◽  
Time Resolved ◽  
Carrier Recombination ◽  
Absorber Material ◽  
Charge Carrier Recombination ◽  
Conversion Efficiencies

High photovoltages and power conversion efficiencies of perovskite solar cells (PSCs) can be realized by controlling the undesired nonradiative charge carrier recombination. Here, we introduce a judicious amount of guanidinium iodide into mixed-cation and mixed-halide perovskite films to suppress the parasitic charge carrier recombination, which enabled the fabrication of >20% efficient and operationally stable PSCs yielding reproducible photovoltage as high as 1.20 V. By introducing guanidinium iodide into the perovskite precursor solution, the bandgap of the resulting absorber material changed minimally; however, the nonradiative recombination diminished considerably as revealed by time-resolved photoluminescence and electroluminescence studies. Furthermore, using capacitance-frequency measurements, we were able to correlate the hysteresis features exhibited by the PSCs with interfacial charge accumulation. This study opens up a path to realize new record efficiencies for PSCs based on guanidinium iodide doped perovskite films.

scholarly journals Perovskite Solar Cells Yielding Reproducible Photovoltage of 1.20 V

Research ◽  
2019 ◽  
Vol 2019 ◽  
pp. 1-9 ◽  
Author(s):  
Essa A. Alharbi ◽  
M. Ibrahim Dar ◽  
Neha Arora ◽  
Mohammad Hayal Alotaibi ◽  
Yahya A. Alzhrani ◽  
...  
Keyword(s):  
Solar Cells ◽  
Charge Carrier ◽  
Perovskite Solar Cells ◽  
Precursor Solution ◽  
Nonradiative Recombination ◽  
Time Resolved ◽  
Carrier Recombination ◽  
Absorber Material ◽  
Charge Carrier Recombination ◽  
Conversion Efficiencies

High photovoltages and power conversion efficiencies of perovskite solar cells (PSCs) can be realized by controlling the undesired nonradiative charge carrier recombination. Here, we introduce a judicious amount of guanidinium iodide into mixed-cation and mixed-halide perovskite films to suppress the parasitic charge carrier recombination, which enabled the fabrication of >20% efficient and operationally stable PSCs yielding reproducible photovoltage as high as 1.20 V. By introducing guanidinium iodide into the perovskite precursor solution, the bandgap of the resulting absorber material changed minimally; however, the nonradiative recombination diminished considerably as revealed by time-resolved photoluminescence and electroluminescence studies. Furthermore, using capacitance-frequency measurements, we were able to correlate the hysteresis features exhibited by the PSCs with interfacial charge accumulation. This study opens up a path to realize new record efficiencies for PSCs based on guanidinium iodide doped perovskite films.

Time-resolved microwave technique for ultrafast charge-carrier recombination time measurements in diamonds and GaAs

1999 ◽  
Vol 74 (12) ◽  
pp. 1731-1733 ◽  
Author(s):  
S. V. Garnov ◽  
A. I. Ritus ◽  
S. M. Klimentov ◽  
S. M. Pimenov ◽  
V. I. Konov ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Time Resolved ◽  
Recombination Time ◽  
Microwave Technique ◽  
Carrier Recombination ◽  
Charge Carrier Recombination

scholarly journals High Performance Planar Structure Perovskite Solar Cells Using a Solvent Dripping Treatment on Hole Transporting Layer

Coatings ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 127 ◽  
Author(s):  
Xuhui Wang ◽  
Gang Lu ◽  
Min Zhang ◽  
Yali Gao ◽  
Yanbo Liu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Charge Carrier ◽  
High Performance ◽  
Short Circuit ◽  
Perovskite Solar Cells ◽  
Solution Treatment ◽  
Short Circuit Current ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Transport Layer

Perovskite solar cell efficiency is not only related with material properties, but also affected by the interface engineering that used in perovskite solar cells. The perovskite film/electrode interface properties play important roles in charge carrier extraction, transport, and recombination. To achieve better interface contact for the device operation, proper interlayers or surface treatment should be applied. In this study, we applied a poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) interlayer with a solvent/solution washing treatment as the hole transport layer. It showed that by the solvent/solution treatment, the PEDOT:PSS film conductivity was significantly enhanced, and hence, the charge carrier transfer efficiency was efficiently improved, and the device short-circuit current density was enlarged. Finally, the device efficiency significantly increased from 14.8% to 16.2%.

Light-Emitting Diodes Using Semiconducting Oligothiophenes

1993 ◽  
Vol 328 ◽  
Author(s):  
K. Uchiyama ◽  
H. Akimichi ◽  
S. Hotta ◽  
H. Noge ◽  
H. Sakaki
Keyword(s):  
Light Emitting Diodes ◽  
High Vacuum ◽  
Layered Structures ◽  
Hole Transport ◽  
Ultra High Vacuum ◽  
Transport Layer ◽  
Hole Transport Layer ◽  
Aluminum Electrode ◽  
Light Emitting ◽  
Carrier Recombination

ABSTRACTThe light-emitting diodes (LEDs) using semiconducting oligothiophenes, dimethylquater-thiophene (DMQtT, tetramer), dimethylquinquethiophene (DMQqT, pentamer) and dimethyl-sexithiophene (DMSxT, hexamer), have been investigated. These oligomers were deposited on ITO-coated glass in ultra high vacuum and an aluminum electrode was subsequently vacuum-deposited on top of the oligomers. These structures have the diode configuration with Schottky barrier between the oligomers and aluminum.The LED using DMSxT shows good rectifying feature with the rectifying ratio of 1500 at ±10V.Red-orange emission is clearly observed above 4V bias. In this LED, DMSxT acts not only as an emitting layer but also as a hole transport layer. We have also fabricated and studied alternate layered structures of DMSxT/DMQtT and DMSxT/DMQqT as the emitting layer. In these configurations, the carrier recombination can be modulated because both DMQtT and DMQqT have energy gaps wider than that of DMSxT.The quantum efficiencies (photons emitted per carriers injected) of the LEDs using DMSxT/DMQtT and DMSxT/DMQqT are about one hundred times and one thousand times larger than that of the LED solely based on DMSxT, respectively. These results indicate that the layered structures are advantageous in increasing quantum efficiency of the emission.

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