Fermi Level Pinning at Electrical Metal Contacts of Monolayer Molybdenum Dichalcogenides

ACS Nano ◽  
2017 ◽  
Vol 11 (2) ◽  
pp. 1588-1596 ◽  
Author(s):  
Changsik Kim ◽  
Inyong Moon ◽  
Daeyeong Lee ◽  
Min Sup Choi ◽  
Faisal Ahmed ◽  
...  
Keyword(s):  
Fermi Level ◽  
Metal Contacts ◽  
Fermi Level Pinning

scholarly journals Defect Dominated Charge Transport and Fermi Level Pinning in MoS2/Metal Contacts

2017 ◽  
Vol 9 (22) ◽  
pp. 19278-19286 ◽  
Author(s):  
Pantelis Bampoulis ◽  
Rik van Bremen ◽  
Qirong Yao ◽  
Bene Poelsema ◽  
Harold J. W. Zandvliet ◽  
...  
Keyword(s):  
Fermi Level ◽  
Charge Transport ◽  
Metal Contacts ◽  
Fermi Level Pinning

Origins of Fermi-Level Pinning between Molybdenum Dichalcogenides (MoSe2, MoTe2) and Bulk Metal Contacts: Interface Chemistry and Band Alignment

2019 ◽  
Vol 123 (39) ◽  
pp. 23919-23930 ◽  
Author(s):  
Christopher M. Smyth ◽  
Rafik Addou ◽  
Christopher L. Hinkle ◽  
Robert M. Wallace
Keyword(s):  
Fermi Level ◽  
Band Alignment ◽  
Metal Contacts ◽  
Interface Chemistry ◽  
Bulk Metal ◽  
Fermi Level Pinning

scholarly journals Fermi-level pinning-free WSe2 transistors via 2D van der Waals metal contacts and their complementary logic gate circuits

2021 ◽  
Author(s):  
Jisu Jang ◽  
Hyun-Soo Ra ◽  
Jongtae Ahn ◽  
Tae Wook Kim ◽  
Seung Ho Song ◽  
...  
Keyword(s):  
Fermi Level ◽  
Logic Gate ◽  
Van Der Waals ◽  
Complementary Metal Oxide Semiconductor ◽  
Logic Gates ◽  
Oxide Semiconductor ◽  
Metal Contacts ◽  
Precise Control ◽  
Fermi Level Pinning ◽  
Semiconductor Circuits

Abstract Precise control over the polarity of transistors is a key necessity for the construction of complementary metal–oxide–semiconductor circuits. However, the polarity control of two-dimensional (2D) transistors remains a challenge because of Fermi-level pinning resulting from disorders at metal–semiconductor interfaces. Here, we propose a strategy for clean van der Waals contacts, wherein a metallic 2D material, chlorine-doped SnSe2 (Cl–SnSe2), is used as the contact to provide an interface that is free of defects and Fermi-level pinning. Such clean contacts created via van der Waals integration of a 2D metal possess nearly ideal Schottky barrier heights, thus permitting polarity-controllable transistors. With the integration of 2D metallic Cl–SnSe2 as contacts, WSe2 transistors exhibit pronounced p-type characteristics, which are distinctly different from those of the devices with evaporated metal contacts, where n-type transport is observed. Finally, this ability to control the polarity enables the fabrication of functional logic gates and circuits, including inverter, NAND, and NOR.

Barrier heights and Fermi level pinning in metal contacts on p-type GaN

2020 ◽  
Vol 116 (21) ◽  
pp. 213506 ◽  
Author(s):  
Sumaiya Wahid ◽  
Nadim Chowdhury ◽  
Md Kawsar Alam ◽  
Tomás Palacios
Keyword(s):  
Fermi Level ◽  
Metal Contacts ◽  
Fermi Level Pinning ◽  
Barrier Heights ◽  
P Type

Origins of Fermi Level Pinning between Tungsten Dichalcogenides (WS2, WTe2) and Bulk Metal Contacts: Interface Chemistry and Band Alignment

2020 ◽  
Vol 124 (27) ◽  
pp. 14550-14563
Author(s):  
Christopher M. Smyth ◽  
Rafik Addou ◽  
Christopher L. Hinkle ◽  
Robert M. Wallace
Keyword(s):  
Fermi Level ◽  
Band Alignment ◽  
Metal Contacts ◽  
Interface Chemistry ◽  
Bulk Metal ◽  
Fermi Level Pinning

Fermi level pinning and band bending in δ-doped BaSnO3

2021 ◽  
Vol 118 (5) ◽  
pp. 052101
Author(s):  
Youjung Kim ◽  
Hyeongmin Cho ◽  
Kookrin Char
Keyword(s):  
Fermi Level ◽  
Band Bending ◽  
Fermi Level Pinning

Fermi‐Level Pinning Free High‐Performance 2D CMOS Inverter Fabricated with Van Der Waals Bottom Contacts

2021 ◽  
pp. 2001212
Author(s):  
Tien Dat Ngo ◽  
Zheng Yang ◽  
Myeongjin Lee ◽  
Fida Ali ◽  
Inyong Moon ◽  
...  
Keyword(s):  
Fermi Level ◽  
High Performance ◽  
Van Der Waals ◽  
Cmos Inverter ◽  
Fermi Level Pinning

Metal silicide Schottky barriers on Si and Ge show weaker Fermi level pinning

2012 ◽  
Vol 101 (5) ◽  
pp. 052110 ◽  
Author(s):  
L. Lin ◽  
Y. Guo ◽  
J. Robertson
Keyword(s):  
Fermi Level ◽  
Schottky Barriers ◽  
Metal Silicide ◽  
Fermi Level Pinning
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