Barrier heights and Fermi level pinning in metal contacts on p-type GaN

AbstractMaterial and electrical characterization of n-type and p-type Si1-x-yGex Cy epitaxial layers on Si(100) was performed using silicided platinum Schottky contacts. XRD studies show Pt silcidation of SiGeC proceeds from non-reacted Pt to Pt2(SiGeC) and completes with the Pt(SiGeC) phase similar to Pt/Si silicides, but Pt silicide reactions with SiGeC are shown to require higher temperatures than Pt reactions with Si. Electrical characterization of Pt(SiGeC) contacts to n-type Sil1-x-yGexCx/Si shows rectifying behavior with constant barrier heights of 0.67eV independent of composition, indicating Fermi level pinning relative to the SiGeC conduction band is occurring. Pt(SiGeC) contacts to p-type Si1-x-yGexCy/Si are also rectifying with barrier heights that track the variation of the SiGeC energy bandgap.

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Defect Dominated Charge Transport and Fermi Level Pinning in MoS2/Metal Contacts

ACS Applied Materials & Interfaces ◽

10.1021/acsami.7b02739 ◽

2017 ◽

Vol 9 (22) ◽

pp. 19278-19286 ◽

Cited By ~ 87

Author(s):

Pantelis Bampoulis ◽

Rik van Bremen ◽

Qirong Yao ◽

Bene Poelsema ◽

Harold J. W. Zandvliet ◽

...

Keyword(s):

Fermi Level ◽

Charge Transport ◽

Metal Contacts ◽

Fermi Level Pinning

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Anomalously persistent p-type behavior of WSe2 field-effect transistors by oxidized edge-induced Fermi-level pinning

Journal of Materials Chemistry C ◽

10.1039/d1tc04148g ◽

2022 ◽

Author(s):

Tien Dat Ngo ◽

Min Sup Choi ◽

Myeongjin Lee ◽

Fida Ali ◽

Won Jong Yoo

Keyword(s):

Fermi Level ◽

Field Effect ◽

Field Effect Transistors ◽

High Mobility ◽

Two Dimensional ◽

Edge Contact ◽

Fermi Level Pinning ◽

P Type

A technique to form the edge contact in two-dimensional (2D) based field-effect transistors (FETs) has been intensively studied for the purpose of achieving high mobility and also recently overcoming the...

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Origins of Fermi-Level Pinning between Molybdenum Dichalcogenides (MoSe2, MoTe2) and Bulk Metal Contacts: Interface Chemistry and Band Alignment

The Journal of Physical Chemistry C ◽

10.1021/acs.jpcc.9b04355 ◽

2019 ◽

Vol 123 (39) ◽

pp. 23919-23930 ◽

Cited By ~ 2

Author(s):

Christopher M. Smyth ◽

Rafik Addou ◽

Christopher L. Hinkle ◽

Robert M. Wallace

Keyword(s):

Fermi Level ◽

Band Alignment ◽

Metal Contacts ◽

Interface Chemistry ◽

Bulk Metal ◽

Fermi Level Pinning

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STM studies of Fermi-level pinning on the GaAs(001) surface

Philosophical Transactions of the Royal Society of London Series A Physical and Engineering Sciences ◽

10.1098/rsta.1993.0106 ◽

1993 ◽

Vol 344 (1673) ◽

pp. 533-543 ◽

Cited By ~ 3

Keyword(s):

Fermi Level ◽

Valence Band ◽

Surface Defects ◽

Defect Density ◽

Valence Band Maximum ◽

Intrinsic Defect ◽

Fermi Level Pinning ◽

Donor States ◽

P Type ◽

Surface Donor

This paper reviews recent scanning tunnelling microsopy (STM) studies of Fermi-level pinning on the surface of both n- and p-type GaAs(001). The samples are all grown by molecular beam epitaxy and have a (2 x 4)/c(2 x 8) surface reconstruction. The STM has shown that on the surface of highly doped n-type GaAs(001) there is a high density of kinks in the dimer-vacancy rows of the (2 x 4) reconstruction. These kinks are found to be surface acceptors with approximately one electron per kink. The kinks form in exactly the required number to pin the Fermi-level of n-type GaAs(001) at an acceptor level close to mid gap, irrespective of doping level. The Fermi-level position is confirmed with tunnelling spectroscopy. No similar surface donor states are found on p-type GaAs(001). In this case Fermi-level pinning results from ‘intrinsic’ surface defects such as step edges. Since this intrinsic defect density is independent of doping, at high doping levels the Fermi-level on p-type GaAs(001) moves down in the band gap towards the valence band. Tunnelling spectroscopy on p-type GaAs(001) doped 10 19 cm -3 with Be shows the Fermi-level to be 150 mV above the valence band maximum

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Fermi-level pinning and Schottky barrier heights on epitaxially grown fully strained and partially relaxed n-type Si1−xGex layers

Journal of Applied Physics ◽

10.1063/1.371768 ◽

1999 ◽

Vol 86 (12) ◽

pp. 6890-6894 ◽

Cited By ~ 7

Author(s):

M. Mamor ◽

O. Nur ◽

M. Karlsteen ◽

M. Willander ◽

F. D. Auret

Keyword(s):

Fermi Level ◽

Schottky Barrier ◽

Fermi Level Pinning ◽

Barrier Heights

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NEGATIVE MAGNETORESISTANCE IN PbTe(Mn,Cr)

International Journal of Modern Physics B ◽

10.1142/s0217979202014371 ◽

2002 ◽

Vol 16 (20n22) ◽

pp. 3343-3346 ◽

Cited By ~ 2

Author(s):

D. KHOKHLOV ◽

I. IVANCHIK ◽

A. KOZHANOV ◽

A. MOROZOV ◽

E. SLYNKO ◽

...

Keyword(s):

Fermi Level ◽

Band Edge ◽

Negative Magnetoresistance ◽

Conduction Band Edge ◽

Valence Band Edge ◽

Narrow Gap ◽

Magnetoresistance Effect ◽

Fermi Level Pinning ◽

P Type ◽

Substantial Drop

We have observed the negative magnetoresistance effect in the narrow-gap PbTe(Mn,Cr) semiconductor, in which the Fermi level is pinned within the gap nearby the conduction band edge. Previously the giant negative magentoresistance effect has been reported in PbTe(Mn,Yb), in which the Fermi level is pinned in the gap nearby the valence band edge. It is known that in the case of Yb doping the Fermi level pinning results from the 2+ - 3+ valence instability of an impurity. The same sort of the valence instability provides the Fermi level pinning in PbTe(Mn,Cr), but the conductivity is of the n-type, not of the p-type as in PbTe(Mn,Yb). Introduction of magnetic field leads to substantial drop of the PbTe(Mn,Cr) resistivity of about 30% at T = 4.2 K. This is however much lower than in PbTe(Mn,Yb), where the effect amplitude reached 3 orders of magnitude. The effect disappears at T = 15 K. Possible mechanisms of the effect are discussed.

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