The role of the local chemical environment of Ag on the resistive switching mechanism of conductive bridging random access memories

2015 ◽  
Vol 17 (37) ◽  
pp. 23931-23937 ◽  
Author(s):  
E. Souchier ◽  
F. D'Acapito ◽  
P. Noé ◽  
P. Blaise ◽  
M. Bernard ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Local Environment ◽  
Chemical Environment ◽  
Switching Mechanism ◽  
Before And After ◽  
Local Chemical Environment ◽  
Resistive Switching Mechanism

GeSx-based CBRAM devices are studied using synchrotron characterization before and after switching in order to understand the local environment around Ag atoms.

scholarly journals Biomaterial-Induced Stable Resistive Switching Mechanism in TiO2 Thin Films: The Role of Active Interstitial Sites/Ions in Minimum Current Leakage and Superior Bioactivity

ACS Omega ◽  
2020 ◽  
Vol 5 (30) ◽  
pp. 19050-19060
Author(s):  
Misbah Sehar Abbasi ◽  
Muhammad Sultan Irshad ◽  
Naila Arshad ◽  
Iftikhar Ahmed ◽  
Muhammad Idrees ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Tio2 Thin Films ◽  
Current Leakage ◽  
Switching Mechanism ◽  
Resistive Switching Mechanism

Ultra-high resistive switching mechanism induced by oxygen ion accumulation on nitrogen-doped resistive random access memory

2014 ◽  
Vol 105 (22) ◽  
pp. 223514 ◽  
Author(s):  
Tian-Jian Chu ◽  
Tsung-Ming Tsai ◽  
Ting-Chang Chang ◽  
Kuan-Chang Chang ◽  
Chih-Hung Pan ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Ion Accumulation ◽  
Access Memory ◽  
Nitrogen Doped ◽  
Switching Mechanism ◽  
Oxygen Ion ◽  
Resistive Switching Mechanism

Resistive Switching Mechanism of Oxygen-Rich Indium Tin Oxide Resistance Random Access Memory

2016 ◽  
Vol 37 (4) ◽  
pp. 408-411 ◽  
Author(s):  
Tsung-Ming Tsai ◽  
Kuan-Chang Chang ◽  
Ting-Chang Chang ◽  
Rui Zhang ◽  
Tong Wang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Switching Mechanism ◽  
Resistance Random Access Memory ◽  
Resistive Switching Mechanism

Unravelling Resistive Switching Mechanism in ZnO NW Arrays: The Role of the Polycrystalline Base Layer

2017 ◽  
Vol 122 (1) ◽  
pp. 866-874 ◽  
Author(s):  
Gianluca Milano ◽  
Samuele Porro ◽  
Md Y. Ali ◽  
Katarzyna Bejtka ◽  
Stefano Bianco ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Base Layer ◽  
Switching Mechanism ◽  
Resistive Switching Mechanism

A flexible organic memory device with a clearly disclosed resistive switching mechanism

2019 ◽  
Vol 64 ◽  
pp. 209-215 ◽  
Author(s):  
Giulia Casula ◽  
Yan Busby ◽  
Alexis Franquet ◽  
Valentina Spampinato ◽  
Laurent Houssiau ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Memory Device ◽  
Organic Memory ◽  
Switching Mechanism ◽  
Organic Memory Device ◽  
Resistive Switching Mechanism

Using post-breakdown conduction study in a MIS structure to better understand the resistive switching mechanism in an MIM stack

2011 ◽  
Vol 22 (45) ◽  
pp. 455702 ◽  
Author(s):  
Xing Wu ◽  
Kin-Leong Pey ◽  
Nagarajan Raghavan ◽  
Wen-Hu Liu ◽  
Xiang Li ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Mis Structure ◽  
Switching Mechanism ◽  
Resistive Switching Mechanism

Characterization of interfacial barrier charging as a resistive switching mechanism in Ag/Sb2Te3/Ag heterojunctions

2018 ◽  
Vol 20 (27) ◽  
pp. 18200-18206 ◽  
Author(s):  
Xinran Cao ◽  
Caimin Meng ◽  
Jing Li ◽  
Jun Wang ◽  
Yafei Yuan ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Switching Mechanism ◽  
Multilevel Memory ◽  
Resistive Switching Mechanism

The memristive nature of Ag/Sb2Te3/Ag heterostructural cells was systematically characterized and potentially extended to a novel multilevel memory concept.

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