Room-Temperature Continuous-Wave Electrically Driven Semipolar (202̅1) Blue Laser Diodes Heteroepitaxially Grown on a Sapphire Substrate

GaN-based short wavelength laser diodes are the most promising key device for a digital versatile disk. We have been improving the important points of the laser diodes in terms of optical guiding layers, mirror facets. The continuous wave laser irradiation at room temperature could be achieved successfully by reducing the threshold current to 60 mA (4 kA/cm2). We have tried to apply the multi low temperature buffer layers to the laser diodes for the first time to reduce the crystal defects.

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Room Temperature CW Operation of GaN-Based Blue Laser Diodes by GaInN/GaN Optical Guiding Layers

MRS Proceedings ◽

10.1557/proc-595-f99w1.2 ◽

1999 ◽

Vol 595 ◽

Author(s):

Masayoshi Koike ◽

Shiro Yamasaki ◽

Yuta Tezen ◽

Seiji Nagai ◽

Sho Iwayama ◽

...

Keyword(s):

Room Temperature ◽

Continuous Wave ◽

Laser Diodes ◽

Threshold Current ◽

Crystal Defects ◽

Blue Laser ◽

Buffer Layers ◽

Continuous Wave Laser ◽

Cw Operation ◽

First Time

AbstractGaN-based short wavelength laser diodes are the most promising key device for a digital versatile disk. We have been improving the important points of the laser diodes in terms of optical guiding layers, mirror facets. The continuous wave laser irradiation at room temperature could be achieved successfully by reducing the threshold current to 60 mA (4 kA/cm2). We have tried to apply the multi low temperature buffer layers to the laser diodes for the first time to reduce the crystal defects.

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Characteristics Of Room Temperature-CW Operated InGaN Multi-Quantum-Well-Structure Laser Diodes

MRS Internet Journal of Nitride Semiconductor Research ◽

10.1557/s1092578300001319 ◽

1997 ◽

Vol 2 ◽

Cited By ~ 50

Author(s):

Shuji Nakamura

Keyword(s):

Quantum Well ◽

Carrier Density ◽

Room Temperature ◽

Continuous Wave ◽

Laser Diodes ◽

Gain Coefficient ◽

Threshold Current ◽

Quantum Well Structure ◽

Multi Quantum Well ◽

Structure Laser

The continuous-wave (CW) operation of InGaN multi-quantum-well-structure laser diodes (LDs) was demonstrated at room temperature (RT) with a lifetime of 35 hours. The threshold current and the voltage of the LDs were 80 mA and 5.5 V, respectively. The threshold current density was 3.6 kA/cm2. When the temperature of the LDs was varied, large mode hopping of the emission wavelength was observed. The carrier lifetime and the threshold carrier density were estimated to be 2-10 ns and 1-2 × 1020/cm3, respectively. From the measurements of gain spectra and an external differential quantum efficiency dependence on the cavity length, the differential gain coefficient, the transparent carrier density, threshold gain and internal loss were estimated to be 5.8×10−17 cm2, 9.3×1019 cm−3, 5200 cm−1 and 43 cm−1, respectively.

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GaN-based blue laser diode with 6.0 W of output power under continuous-wave operation at room temperature

Journal of Semiconductors ◽

10.1088/1674-4926/42/11/112801 ◽

2021 ◽

Vol 42 (11) ◽

pp. 112801

Author(s):

Feng Liang ◽

Degang Zhao ◽

Zongshun Liu ◽

Ping Chen ◽

Jing Yang ◽

...

Keyword(s):

Laser Diode ◽

Room Temperature ◽

Continuous Wave ◽

Chemical Vapor ◽

Threshold Current ◽

Stimulated Emission ◽

Blue Laser ◽

Organic Chemical ◽

Blue Laser Diode ◽

Continuous Wave Operation

Abstract In this work, we reported the room-temperature continuous-wave operation of 6.0 W GaN-based blue laser diode (LD), and its stimulated emission wavelength is around 442 nm. The GaN-based high power blue LD is grown on a c-plane GaN substrate by metal organic chemical vapor deposition (MOCVD), and the width and length of the ridge waveguide structure are 30 and 1200 μm, respectively. The threshold current is about 400 mA, and corresponding threshold current density is 1.1 kA/cm2.

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