scholarly journals Room-Temperature Group-IV LED Based on Defect-Enhanced Ge Quantum Dots

ACS Photonics ◽  
2017 ◽  
Vol 5 (2) ◽  
pp. 431-438 ◽  
Author(s):  
Patrick Rauter ◽  
Lukas Spindlberger ◽  
Friedrich Schäffler ◽  
Thomas Fromherz ◽  
Julia Freund ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Group Iv ◽  
Temperature Group ◽  
Ge Quantum Dots

Room temperature 1.3 and 1.5 μm electroluminescence from Si/Ge quantum dots (QDs)/Si multi-layers

2004 ◽  
Vol 224 (1-4) ◽  
pp. 165-169 ◽  
Author(s):  
Z Pei ◽  
P.S Chen ◽  
S.W Lee ◽  
L.S Lai ◽  
S.C Lu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Ge Quantum Dots

Room-temperature 1550-nm lasing from tensile strain N-doped Ge quantum dots on Si

2020 ◽  
Vol 67 (12) ◽  
pp. 1120-1127
Author(s):  
Hongqiang Li ◽  
Jianing Wang ◽  
Jinjun Bai ◽  
Shanshan Zhang ◽  
Sai Zhang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Tensile Strain ◽  
Room Temperature ◽  
Ge Quantum Dots

scholarly journals Preparation and Optical Properties of Ge and C-Induced Ge Quantum Dots on Si

1999 ◽  
Vol 570 ◽  
Author(s):  
K. Eberl ◽  
O. G. Schmidt ◽  
O. Kienzle ◽  
F. Ernst
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Wave Length ◽  
Lateral Size ◽  
Vertical Alignment ◽  
Indirect Transition ◽  
Strained Si ◽  
Recombination Mechanism ◽  
Ge Quantum Dots ◽  
Strong Confinement

ABSTRACTPure Ge epitaxially grown on Si (100) at high temperatures forms typically 100 nm lateral size islands on top of a 3–4 monolayer thick wetting layer. In stacked layers of Ge dots pronounced vertical alignment is observed if the thickness of the Si spacer layers is smaller than about 50 nm. Pregrowth of a small amount of C on Si substrate induces very small 10 nm size Ge quantum dots after deposition of about 2 to 3 monolayers Ge. Photoluminescence (PL) studies indicate a spatially indirect radiative recombination mechanism with the no-phonon line strongly dominating. Strong confinement shift in the 1–2 nm high and 1Onm lateral size dots results in low activation energies of 30 meV, which causes luminescence quenching above 50K.For large stacked Ge islands with 13 nm thin Si spacer layers we observe a significantly enhanced Ge dot-related PL signal up to room temperature at 1.55μm wave length. This is attributed to a spatially indirect transition between heavy holes confined within the compressively strained Ge dots and two-fold degenerated Δ state electrons in the tensile strained Si between the Ge stacked dots.

Single Hole Charging at Room Temperature of Ge Quantum Dots Grown on Si(001) by Molecular Beam Epitaxy

2009 ◽  
Vol 1 (2) ◽  
pp. 82-86 ◽  
Author(s):  
Rajkumar Singha ◽  
Samaresh Das ◽  
Achintya Dhar ◽  
Samir K. Lahiri ◽  
Samit K. Ray ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Room Temperature ◽  
Molecular Beam ◽  
Single Hole ◽  
Ge Quantum Dots

Room-Temperature Electroluminescence from Ge Quantum Dots Embedded in Photonic Crystal Microcavities

2012 ◽  
Vol 5 (5) ◽  
pp. 052101 ◽  
Author(s):  
Toshiki Tsuboi ◽  
Xuejun Xu ◽  
Jinsong Xia ◽  
Noritaka Usami ◽  
Takuya Maruizumi ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Photonic Crystal ◽  
Room Temperature ◽  
Ge Quantum Dots ◽  
Photonic Crystal Microcavities

Inter-Sub-Level Spectroscopy of P-Type Modulation-Doped Ge Quantum Dots

1999 ◽  
Vol 571 ◽  
Author(s):  
J. L. Liu ◽  
W. G. Wu ◽  
G. Jin ◽  
Y. H. Luo ◽  
S. G. Thomas ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Molecular Beam ◽  
Heavy Hole ◽  
Infrared Detector ◽  
Infrared Range ◽  
Mid Infrared ◽  
Boron Doped ◽  
Ge Quantum Dots ◽  
P Type

ABSTRACTInter-sub-level transitions in p-type modulation-doped Ge quantum dots are observed. The structure is grown by molecular beam epitaxy and consists of 30 periods of Ge quantum dots separated by 6 nm boron-doped Si layers. An absorption peak in the mid-infrared range is observed at room temperature by Fourier transform infrared spectroscopy, and is attributed to the transition between the first two heavy hole states of the Ge quantum dots. This study suggests the possible use of modulation-doped Ge quantum dots for improved infrared detector application.

Room-temperature light-emission from Ge quantum dots in photonic crystals

2008 ◽  
Vol 517 (1) ◽  
pp. 125-127 ◽  
Author(s):  
Jinsong Xia ◽  
Koudai Nemoto ◽  
Yuta Ikegami ◽  
Noritaka Usami ◽  
Yasushi Nakata ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Photonic Crystals ◽  
Room Temperature ◽  
Light Emission ◽  
Ge Quantum Dots

scholarly journals Preparation and Optical Properties of Ge and C-Induced Ge Quantum Dots on Si

1999 ◽  
Vol 571 ◽  
Author(s):  
K. Eberl ◽  
O. G. Schmidt ◽  
O. Kienzle ◽  
F. Ernst
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Wave Length ◽  
Lateral Size ◽  
Vertical Alignment ◽  
Indirect Transition ◽  
Strained Si ◽  
Recombination Mechanism ◽  
Ge Quantum Dots ◽  
Strong Confinement

ABSTRACTPure Ge epitaxially grown on Si (100) at high temperatures forms typically 100 nm lateral size islands on top of a 3–4 monolayer thick wetting layer. In stacked layers of Ge dots pronounced vertical alignment is observed if the thickness of the Si spacer layers is smaller than about 50 nm. Pregrowth of a small amount of C on Si substrate induces very small 10 nm size Ge quantum dots after deposition of about 2 to 3 monolayers Ge. Photoluminescence (PL) studies indicate a spatially indirect radiative recombination mechanism with the no-phonon line strongly dominating. Strong confinement shift in the 1–2 nm high and 1Onm lateral size dots results in low activation energies of 30 meV, which causes luminescence quenching above 50K.For large stacked Ge islands with 13 nm thin Si spacer layers we observe a significantly enhanced Ge dot-related PL signal up to room temperature at 1.55μm wave length. This is attributed to a spatially indirect transition between heavy holes confined within the compressively strained Ge dots and two-fold degenerated A state electrons in the tensile strained Si between the Ge stacked dots.

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