Inter-Sub-Level Spectroscopy of P-Type Modulation-Doped Ge Quantum Dots

1999 ◽  
Vol 571 ◽  
Author(s):  
J. L. Liu ◽  
W. G. Wu ◽  
G. Jin ◽  
Y. H. Luo ◽  
S. G. Thomas ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Molecular Beam ◽  
Heavy Hole ◽  
Infrared Detector ◽  
Infrared Range ◽  
Mid Infrared ◽  
Boron Doped ◽  
Ge Quantum Dots ◽  
P Type

ABSTRACTInter-sub-level transitions in p-type modulation-doped Ge quantum dots are observed. The structure is grown by molecular beam epitaxy and consists of 30 periods of Ge quantum dots separated by 6 nm boron-doped Si layers. An absorption peak in the mid-infrared range is observed at room temperature by Fourier transform infrared spectroscopy, and is attributed to the transition between the first two heavy hole states of the Ge quantum dots. This study suggests the possible use of modulation-doped Ge quantum dots for improved infrared detector application.

Single Hole Charging at Room Temperature of Ge Quantum Dots Grown on Si(001) by Molecular Beam Epitaxy

2009 ◽  
Vol 1 (2) ◽  
pp. 82-86 ◽  
Author(s):  
Rajkumar Singha ◽  
Samaresh Das ◽  
Achintya Dhar ◽  
Samir K. Lahiri ◽  
Samit K. Ray ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Room Temperature ◽  
Molecular Beam ◽  
Single Hole ◽  
Ge Quantum Dots

GalnAsSb Materials for Thermophotovoltaics

1996 ◽  
Vol 450 ◽  
Author(s):  
C. A. Wang ◽  
G. W. Turner ◽  
M. J. Manfra ◽  
H. K. Choi ◽  
D. L. Spears
Keyword(s):  
Room Temperature ◽  
Molecular Beam ◽  
Hole Concentration ◽  
Organometallic Vapor Phase Epitaxy ◽  
Room Temperature Photoluminescence ◽  
P Type ◽  
First Time ◽  
Lattice Matched ◽  
Comparable Quality ◽  
Peak Emission

ABSTRACTGai1−xInxASySb1-y (0.06 < x < 0.18, 0.05 < y < 0.14) epilayers were grown lattice-matched to GaSb substrates by low-pressure organometallic vapor phase epitaxy (OMVPE) using triethylgallium, trimethylindium, tertiarybutylarsine, and trimethylantimony. These epilayers have a mirror-like surface morphology, and exhibit room temperature photoluminescence (PL) with peak emission wavelengths (λP,300K) out to 2.4 μm. 4K PL spectra have a full width at half-maximum of 11 meV or less for λP,4K < 2.1 μm (λP,300K = 2.3 μm). Nominally undoped layers are p-type with typical 300K hole concentration of 9 × 1015 cm−3 and mobility ∼ 450 to 580 cm2/V-s for layers grown at 575°C. Doping studies are reported for the first time for GalnAsSb layers doped n type with diethyltellurium and p type with dimethylzinc. Test diodes of p-GalnAsSb/n-GaSb have an ideality factor that ranges from 1.1 to 1.3. A comparison of electrical, optical, and structural properties of epilayers grown by molecular beam epitaxy indicates OMVPE-grown layers are of comparable quality.

Plasmon polariton enhanced mid-infrared photodetectors based on Ge quantum dots in Si

2017 ◽  
Vol 122 (13) ◽  
pp. 133101 ◽  
Author(s):  
A. I. Yakimov ◽  
V. V. Kirienko ◽  
A. A. Bloshkin ◽  
V. A. Armbrister ◽  
A. V. Dvurechenskii
Keyword(s):  
Quantum Dots ◽  
Infrared Photodetectors ◽  
Mid Infrared ◽  
Plasmon Polariton ◽  
Ge Quantum Dots

Normal-Incidence p-Type Si/SiGe Mid-Infrared Detector with Background-Limited Performance up to 85 K

1998 ◽  
pp. 122-126
Author(s):  
Peter Kruck ◽  
Manfred Helm ◽  
Günther Bauer ◽  
Joachim F. Nützel ◽  
Gerhard Abstreiter
Keyword(s):  
Infrared Detector ◽  
Normal Incidence ◽  
Mid Infrared ◽  
P Type

Room temperature 1.3 and 1.5 μm electroluminescence from Si/Ge quantum dots (QDs)/Si multi-layers

2004 ◽  
Vol 224 (1-4) ◽  
pp. 165-169 ◽  
Author(s):  
Z Pei ◽  
P.S Chen ◽  
S.W Lee ◽  
L.S Lai ◽  
S.C Lu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Ge Quantum Dots

Ferromagnetic and Paramagnetic Semiconductors Based upon GaN, AlGaN, and GaP

2001 ◽  
Vol 690 ◽  
Author(s):  
Mark E. Overberg ◽  
Gerald T. Thaler ◽  
Rachel M. Frazier ◽  
Brent P. Gila ◽  
Cammy R. Abernathy ◽  
...  
Keyword(s):  
Room Temperature ◽  
Molecular Beam ◽  
Hysteretic Behavior ◽  
Ferromagnetic Semiconductors ◽  
Temperature Dependent ◽  
Paramagnetic Behavior ◽  
Gas Source ◽  
P Type ◽  
First Time ◽  
Temperature Dependent Magnetization

ABSTRACTEpitaxial growth of the ferromagnetic semiconductors GaMnP:C and GaMnN has been investigated by Gas Source Molecular Beam Epitaxy (GSMBE). GaMnP:C films grown with 9.4% Mn are found to be p-type with hysteretic behavior to room temperature. GaMnN films grown at 700 °C with 2.8% Mn show hysteresis at 300 K, while temperature-dependent magnetization measurements indicate that the magnetism may persist to much higher temperatures (> 325 K). Samples of AlGaMnN have also been prepared for the first time that show improved surface morphology compared to GaMnN but which show only paramagnetic behavior.

Room-temperature 1550-nm lasing from tensile strain N-doped Ge quantum dots on Si

2020 ◽  
Vol 67 (12) ◽  
pp. 1120-1127
Author(s):  
Hongqiang Li ◽  
Jianing Wang ◽  
Jinjun Bai ◽  
Shanshan Zhang ◽  
Sai Zhang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Tensile Strain ◽  
Room Temperature ◽  
Ge Quantum Dots

Stacked Layers of C-Induced Ge Quantum Dots

1998 ◽  
Vol 533 ◽  
Author(s):  
O. G. Schmidt ◽  
K. Eberl ◽  
S. Schieker ◽  
N. Y. Jin-Phillipp ◽  
F. Phillipp ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optoelectronic Devices ◽  
Vertical Alignment ◽  
Strain Fields ◽  
Identical Structure ◽  
Strain Compensation ◽  
Ge Quantum Dots

AbstractFifty layers of carbon-induced germanium dots, separated by 9.6 nm Si, are stacked by solid source molecular beam epitaxy. Each dot layer consists of 0.2 monolayers of pre-deposited carbon and 2.4 monolayers of post-grown Ge. These carbon-induced germanium dots are only 10 to 15 nm in diameter and 1 to 2 nm in height. Vertical alignment due to penetrating strain fields of underlying dot layers is not observed. Unlike to an identical structure without the pre-growth of carbon, a variety of advantageous aspects such as strain compensation, strongly enhanced no-phonon photoluminescence at a wavelength of around 1.3 μm and the possibility of effective waveguiding make this stack of C-induced Ge islands an attractive structure for Si based optoelectronic devices.

scholarly journals Preparation and Optical Properties of Ge and C-Induced Ge Quantum Dots on Si

1999 ◽  
Vol 570 ◽  
Author(s):  
K. Eberl ◽  
O. G. Schmidt ◽  
O. Kienzle ◽  
F. Ernst
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Wave Length ◽  
Lateral Size ◽  
Vertical Alignment ◽  
Indirect Transition ◽  
Strained Si ◽  
Recombination Mechanism ◽  
Ge Quantum Dots ◽  
Strong Confinement

ABSTRACTPure Ge epitaxially grown on Si (100) at high temperatures forms typically 100 nm lateral size islands on top of a 3–4 monolayer thick wetting layer. In stacked layers of Ge dots pronounced vertical alignment is observed if the thickness of the Si spacer layers is smaller than about 50 nm. Pregrowth of a small amount of C on Si substrate induces very small 10 nm size Ge quantum dots after deposition of about 2 to 3 monolayers Ge. Photoluminescence (PL) studies indicate a spatially indirect radiative recombination mechanism with the no-phonon line strongly dominating. Strong confinement shift in the 1–2 nm high and 1Onm lateral size dots results in low activation energies of 30 meV, which causes luminescence quenching above 50K.For large stacked Ge islands with 13 nm thin Si spacer layers we observe a significantly enhanced Ge dot-related PL signal up to room temperature at 1.55μm wave length. This is attributed to a spatially indirect transition between heavy holes confined within the compressively strained Ge dots and two-fold degenerated Δ state electrons in the tensile strained Si between the Ge stacked dots.

The Properties of n-ZnO/p-SiC Heterojunctions and their Potential Applications for Devices

2006 ◽  
Vol 527-529 ◽  
pp. 1571-1574 ◽  
Author(s):  
Cole W. Litton ◽  
Ya.I. Alivov ◽  
D. Johnstone ◽  
Ümit Özgür ◽  
V. Avrutin ◽  
...  
Keyword(s):  
Room Temperature ◽  
Molecular Beam ◽  
Reverse Bias ◽  
Zno Films ◽  
Turn On ◽  
Forward Current ◽  
Current Voltage ◽  
Potential Applications ◽  
Current Voltage Characteristics ◽  
P Type

Heteroepitaxial n-ZnO films have been grown on commercial p-type 6H-SiC substrates by plasma-assisted molecular-beam epitaxy, and n-ZnO/p-SiC heterojunction mesa structures have been fabricated and their photoresponse properties have been studied. Current-voltage characteristics of the structures had a very good rectifying diode-like behavior with a leakage current less than 2 x 10-4 A/cm2 at -10 V, a breakdown voltage greater than 20 V, a forward turn on voltage of ∼5 V, and a forward current of ∼2 A/cm2 at 8 V. Photosensitivity of the diodes, when illuminated from ZnO side, was studied at room temperature and photoresponsivity of as high as 0.045 A/W at -7.5 V reverse bias was observed for photon energies higher than 3.0 eV.

Sign in / Sign up

Export Citation Format

Share Document