Formation of High-Quality GaN Microcrystals by Pendeoepitaxial Overgrowth of GaN Nanowires on Si(111) by Molecular Beam Epitaxy

Selective area growth (SAG) of GaN nanowires and nanowalls on Si(111) substrates with AlN and GaN buffer layers grown by plasma-assisted molecular beam epitaxy was studied. For N-polar samples filling of SAG features increased with decreasing lattice mismatch between the SAG and buffer. Defects related to Al–Si eutectic formation were observed in all samples, irrespective of lattice mismatch and buffer layer polarity. Eutectic related defects in the Si surface caused voids in N-polar samples, but not in metal-polar samples. Likewise, inversion domains were present in N-polar, but not metal-polar samples. The morphology of Ga-polar GaN SAG on nitride buffered Si(111) was similar to that of homoepitaxial GaN SAG.

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Piezoresponse force microscopy (PFM) characterization of GaN nanowires grown by Plasma assisted Molecular beam epitaxy (PA-MBE)

2016 Joint IEEE International Symposium on the Applications of Ferroelectrics, European Conference on Application of Polar Dielectrics, and Piezoelectric Force Microscopy Workshop (ISAF/ECAPD/PFM) ◽

10.1109/isaf.2016.7578091 ◽

2016 ◽

Author(s):

Nikhilendu Tiwary ◽

Ritam Sarkar ◽

V. Ramgopal Rao ◽

Apurba Laha

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Piezoresponse Force Microscopy ◽

Force Microscopy ◽

Gan Nanowires

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Formation of long single quantum dots in high quality InSb nanowires grown by molecular beam epitaxy

Nanoscale ◽

10.1039/c5nr04273a ◽

2015 ◽

Vol 7 (36) ◽

pp. 14822-14828 ◽

Cited By ~ 15

Author(s):

Dingxun Fan ◽

Sen Li ◽

N. Kang ◽

Philippe Caroff ◽

L. B. Wang ◽

...

Keyword(s):

Quantum Dots ◽

Electron Transport ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Single Electron ◽

Single Quantum ◽

High Quality ◽

Single Quantum Dots ◽

Single Electron Transport ◽

Insb Nanowires

Single electron transport is demonstrated in high-quality MBE-grown InSb nanowire single quantum dots with a dot length up to ∼700 nm.

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THE STUDY OF Pd SCHOTTKY CONTACT ON POROUS GaN FOR UV METAL–SEMICONDUCTOR–METAL (MSM) PHOTODETECTORS

Journal of Nonlinear Optical Physics & Materials ◽

10.1142/s0218863507003871 ◽

2007 ◽

Vol 16 (04) ◽

pp. 497-503 ◽

Cited By ~ 1

Author(s):

L. S. CHUAH ◽

Z. HASSAN ◽

H. ABU HASSAN

Keyword(s):

Molecular Beam Epitaxy ◽

Tensile Stress ◽

Molecular Beam ◽

Schottky Contact ◽

Nitrogen Plasma ◽

Porous Sample ◽

Optical Studies ◽

High Quality ◽

Metal Semiconductor Metal ◽

Msm Photodetectors

High quality unintentionally doped n-type GaN layers were grown on Si (111) substrate using AlN (about 200 nm) as buffer layer by radio frequency (RF) nitrogen plasma-assisted molecular beam epitaxy (MBE). This paper presents the structural and optical studies of porous GaN sample compared to the corresponding as-grown GaN. Metal–semiconductor–metal (MSM) photodiode was fabricated on the samples. For as-grown GaN-based MSM, the detector shows a sharp cut-off wavelength at 362 nm, with a maximum responsivity of 0.254 A/W achieved at 360 nm. For porous GaN MSM detector, a sharp cut-off wavelength at 360 nm with a maximum responsivity of 0.655 A/W was achieved at 359 nm. Both the detectors show a little decrease in responsivity in the UV spectral region. The MSM photodiode based on porous GaN shows enhanced (2×) magnitude of responsivity relative to the as-grown GaN MSM photodiode. Enhancement of responsivity can be attributed to the relaxation of tensile stress and reduction of surface pit density in the porous sample.

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High-Quality AlGaN/GaN Grown on Sapphire by Gas-Source Molecular Beam Epitaxy using a Thin Low-Temperature AlN Layer

MRS Proceedings ◽

10.1557/proc-595-f99w8.1 ◽

1999 ◽

Vol 595 ◽

Author(s):

M. J. Jurkovic ◽

L.K. Li ◽

B. Turk ◽

W. I. Wang ◽

S. Syed ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Low Temperature ◽

Molecular Beam ◽

Structural Characteristics ◽

High Quality ◽

Gas Source ◽

Background Doping ◽

Shubnikov De Haas Oscillations

AbstractGrowth of high-quality AlGaN/GaN heterostructures on sapphire by ammonia gassource molecular beam epitaxy is reported. Incorporation of a thin AlN layer grown at low temperature within the GaN buffer is shown to result in enhanced electrical and structural characteristics for subsequently grown heterostructures. AlGaN/GaN structures exhibiting reduced background doping and enhanced Hall mobilities (2100, 10310 and 12200 cm2/Vs with carrier sheet densities of 6.1 × 1012 cm−2, 6.0 × 1012 cm−2, and 5.8 × 1012 cm−2 at 300 K, 77 K, and 0.3 K, respectively) correlate with dislocation filtering in the thin AlN layer. Magnetotransport measurements at 0.3 K reveal well-resolved Shubnikov-de Haas oscillations starting at 3 T.

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