Computational Study of the Gas Phase Reactions of Isopropylimido and Allylimido Tungsten Precursors for Chemical Vapor Deposition of Tungsten Carbonitride Films: Implications for the Choice of Carrier Gas

2008 ◽  
Vol 20 (23) ◽  
pp. 7246-7251 ◽  
Author(s):  
Yong Sun Won ◽  
Young Seok Kim ◽  
Timothy J. Anderson ◽  
Lisa McElwee-White
Keyword(s):  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Computational Study ◽  
Chemical Vapor ◽  
Gas Phase Reactions ◽  
Carrier Gas ◽  
Tungsten Carbonitride

A Comprehensive Multiphysics, Multiscale Study of Reactor Chamber and Substrate Orientation Effects on Carbon Nanotube Synthesis During Chemical Vapor Deposition Process

2008 ◽  
Author(s):  
Mahmoud Reza Hosseini ◽  
Nader Jalili ◽  
David A. Bruce
Keyword(s):  
Chemical Vapor Deposition ◽  
Carbon Nanotube ◽  
Temperature Profile ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Physical Property ◽  
Fabrication Process ◽  
Multiphase Model ◽  
Gas Phase Reactions

A comprehensive multiphysics, multiphase model of carbon nanotube (CNT) fabrication process by chemical vapor deposition (CVD) is utilized to study the effects of several physical phenomena inside the quartz tube. The investigations include fluid flow properties, temperature profile and heat transfer as well as diffusion and concentration of carbon species along the substrate. These properties are examined in a great detail for a horizontally placed substrate. For each physical property, the effects of substrate dislocation as well as the angle between substrate and reactor chamber longitudinal axis are investigated. It is shown that the temperature in the gas phase reactions region is significantly lower compared to the temperature profile around the substrate. Based on the obtained results, two new CVD system designs are proposed to enhance the temperature in the reactor chamber section where gas phase reactions take place. Moreover, it is shown that substrate dislocation and angle change result in physical property change such as species concentration on upper and lower substrate surfaces. This study is also applicable to other CVD-based fabrication process such as deposition of any layer, since the methodology of the fabrication process remains the same.

FTIR In Situ Studies of the Gas Phase Reactions in Chemical Vapor Deposition of SiC

1995 ◽  
Vol 142 (7) ◽  
pp. 2357-2362 ◽  
Author(s):  
S. Jonas ◽  
W. S. Ptak ◽  
W. Sadowski ◽  
E. Walasek ◽  
C. Paluszkiewicz
Keyword(s):  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Gas Phase Reactions ◽  
In Situ Studies

Gas Phase Reactions Relevant to Chemical Vapor Deposition: Optical Diagnostics

1989 ◽  
Vol 168 ◽  
Author(s):  
D. Burgess
Keyword(s):  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Optical Emission ◽  
Laser Photolysis ◽  
Particle Nucleation ◽  
Gas Phase Reactions ◽  
Decomposition Processes ◽  
Rate Of Reaction

AbstractLaser photolysis, optical emission, and laser-induced fluorescence (LIF) were used to investigate laser driven decomposition processes in the gas phase pertaining to the systems: SiH4 → Si (s) and SiH4 → NH3 → Si3N4 (s). These processes are important to silicon/ silicon-nitride chemical vapor deposition, flame-driven gas phase silicon-particle nucleation, and laser-induced processes for materials fabrication. UV laser photolysis was used to generate SiHx and NHx species from silane and ammonia. A number of photofragments were identified by emission from excited states. The rate of reaction of NH2 with silane was measured using LIF to detect NH2 as a function of time following photolysis of ammonia

Computational Study of Reactive Flow in Halide Chemical Vapor Deposition of Silicon Carbide Epitaxial Film

2008 ◽  
Author(s):  
Rong Wang ◽  
Ronghui Ma
Keyword(s):  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Computational Study ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Large Temperature ◽  
Processing Conditions ◽  
Wide Range

In this study, a comprehensive transport model is developed for Halide Chemical Vapor Deposition (HCVD) system which includes gas dynamics, heat and mass transfer, gas-phase and surface chemistry, and radio-frequency induction heating. This model addresses transport of multiple chemical species in high temperature environment with large temperature difference and complex chemical reactions in gas-phase and on the deposition surface. Numerical modeling of the deposition process in a horizontal hot-wall reactor using SiCl4/C3H8/H2 as precursors has been performed over a wide range of operational parameters to quantify the effects of processing parameters on the film growth. The simulations of the deposition process provide detailed information on the gas-phase composition as well as the distributions of gas velocity and temperature in the reactor. The deposition rate on the substrate surface is also predicted. The results illustrate that deposition temperature and the flow rate of carrier gas play an important role in determining the processing conditions and deposition rate. A high concentration of HCl exists in the growth chamber and the etching of the SiC films by HCl has significant effect on the deposition rate. The modeling approach can be further used to improve reactor design and optimization of processing conditions.

FT-IR Analysis of the Photolytic Laser-Induced Chemical Vapor Deposition of Germanium Films

1986 ◽  
Vol 40 (3) ◽  
pp. 374-378 ◽  
Author(s):  
A. E. Stanley ◽  
R. A. Johnson ◽  
J. B. Turner ◽  
A. H. Roberts
Keyword(s):  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Gas Phase Reactions ◽  
Conversion Rates ◽  
End Products ◽  
Ft Ir ◽  
Ir Analysis ◽  
Germanium Films

Germanium and doped-germanium polycrystalline films were formed with the use of photolytic CO2 laser-induced chemical vapor deposition. The compounds which yielded germanium in large quantities were germane, ethylgermane, and diethylgermane. Triethylgermane produces germanium in trace quantities. Gas-phase reactions were monitored with the use of Fourier transform infrared spectroscopy, also used for identification of end products. Scanning electron microscopy was used for analysis of the films. The products identified on irradiation of germane were germanium and hydrogen, with conversion rates of 86%. On irradiation of diethylgermane and ethylgermane, ethylene, germane, germanium, and hydrogen were produced. Germanium films doped with cadmium and aluminum were produced successfully by the irradiation of germane mixtures containing dimethylcadmium or trimethylaluminum, respectively.

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