Structure, Optical Properties, and Magnetism of the Full Zn1–xCuxWO4 (0 ≤ x ≤ 1) Composition Range

The transformation of the vibrational spectrum of Cu2Zn(Sn1−xGex)S4 single crystals over the entire composition range (0 ≤ x ≤ 1) is studied experimentally as well as theoretically.

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GROWTH AND ELECTRICAL/OPTICAL PROPERTIES OF AlxGa1−xN IN THE FULL COMPOSITION RANGE

III-Nitride Semiconductor Materials ◽

10.1142/9781860949036_0008 ◽

2006 ◽

pp. 257-304

Author(s):

Feng Yun

Keyword(s):

Optical Properties ◽

Composition Range

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Physical and Optical Properties of Ce3+ Doped in Bismuth Borate Glass

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.770.254 ◽

2013 ◽

Vol 770 ◽

pp. 254-257 ◽

Cited By ~ 5

Author(s):

Kitipun Boonin ◽

Onanong Chamlek ◽

Pruittipol Limkitjaroenporn ◽

Hong Joo Kim ◽

Jakrapong Kaewkhao

Keyword(s):

Optical Properties ◽

Absorption Spectra ◽

Borate Glass ◽

Optical Band Gap ◽

Composition Range ◽

Borate Glasses ◽

Melt Quenching ◽

Bismuth Borate ◽

Bismuth Borate Glass ◽

No Absorption

Bismuth borate glasses doped with cerium in the composition 50Bi2O3:(50-x)B2O3:xCeF3 were prepared for the composition range 0x2.5 (in mol%). The glass samples have been fabricated by the conventional melt quenching technique. The physical and optical properties of glass samples were investigated. The optical absorption spectra of the glasses have been measured in the wavelength range 190-1100 nm and no absorption peak was obtained in this region. The absorption spectra of all samples were shifted to longer wavelength with increasing of CeF3 concentrations. Optical band gap decreased and refractive index increased with increasing of CeF3 concentrations.

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Electronic and Optical Properties of Energetic Particle-Irradiated In-rich InGaN

MRS Proceedings ◽

10.1557/proc-864-e7.10 ◽

2005 ◽

Vol 864 ◽

Cited By ~ 1

Author(s):

S.X. Li ◽

K.M. Yu ◽

R.E. Jones ◽

J. Wu ◽

W. Walukiewicz ◽

...

Keyword(s):

Optical Properties ◽

Composition Range ◽

High Energy ◽

Defect Model ◽

Electrochemical Capacitance ◽

Electronic And Optical Properties ◽

Fermi Level Pinning ◽

High Energy Electrons ◽

Capacitance Voltage ◽

Ingan Alloys

AbstractWe have carried out a systematic study of the effects of irradiation on the electronic and optical properties of InGaN alloys over the entire composition range. High energy electrons, protons, and 4He+ were used to produce displacement damage doses (Dd) spanning over five orders of magnitude. The free electron concentrations in InN and In-rich InGaN increase with Dd and finally saturate after a sufficiently high Dd. The saturation of carrier density is attributed to the formation of native donors and the Fermi level pinning at the Fermi Stabilization Energy (EFS), as predicted by the amphoteric native defect model. Electrochemical capacitance-voltage (ECV) measurements reveal a surface electron accumulation whose concentration is determined by pinning at EFS.

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Optical properties of olivines from Ubekendt Island, west Greenland

Mineralogical Magazine and Journal of the Mineralogical Society ◽

10.1180/minmag.1941.026.172.06 ◽

1941 ◽

Vol 26 (172) ◽

pp. 11-15 ◽

Cited By ~ 5

Author(s):

P. M. Game

Keyword(s):

Optical Properties ◽

West Coast ◽

Composition Range ◽

Relative Accuracy ◽

Refractive Indices ◽

Relative Speed ◽

The West ◽

West Greenland ◽

The Subject ◽

Basaltic Lavas

The olivines, which are the subject of this note, were obtained from a series of basaltic lavas and dikes on Ubekendt island, which lies off the west coast of Greenland in latitude 71 ° N., longitude 54 ° W.The optical properties of the olivines were investigated in order to determine any range in composition; such variations might have been expected in the very thick lava series. From this aspect, however, the results are disappointing, the composition range being small. However, it is thought that the results may have a certain interest in showing the relative accuracy obtainable in the measurement of refractive indices and optic axial angles. The usual determinative methods have been slightly varied. It is the purpose of this note to describe these variations and to compare the relative speed and scope of the method used with those obtained by other methods.

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An intergrowth of calcic labradorite in a plagioclase-quartz-biotite gneiss from Broken Hill, New South Wales

Mineralogical Magazine ◽

10.1180/minmag.1977.041.320.07 ◽

1977 ◽

Vol 41 (320) ◽

pp. 469-471 ◽

Cited By ~ 4

Author(s):

Evan R. Phillips ◽

Bryan E. Chenhall ◽

Ian J. Stone ◽

J. W. Pemberton

Keyword(s):

Optical Properties ◽

Composition Range ◽

New South ◽

New South Wales ◽

Biotite Gneiss ◽

Broken Hill ◽

South Wales

SummaryCompositions of An61 and An69·5 have been determined for two domains in plagioclase from a gneiss. Optical properties indicate that the same compositions apply respectively for an intergrowth of ‘matrix’ and lamellae found in zones between the domains. The intergrowth appears to span the composition range between the Bøggild and Huttenlocher intergrowths.

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Structural and optical properties of MOCVD InAlN epilayers

MRS Proceedings ◽

10.1557/proc-0892-ff23-04 ◽

2005 ◽

Vol 892 ◽

Cited By ~ 4

Author(s):

S. Hernández ◽

K. Wang ◽

D. Amabile ◽

E. Nogales ◽

D. Pastor ◽

...

Keyword(s):

Optical Properties ◽

Composition Range ◽

Theoretical Calculations ◽

Stokes Shift ◽

Linear Increase ◽

Defect Structures ◽

Frequency Range ◽

Structural And Optical Properties ◽

Mode Behavior ◽

Lattice Matched

AbstractWe have studied the structural and optical properties of InAlN alloys with compositions nearly lattice-matched to GaN. Scanning electron microscopy measurements reveals a good overall surface quality, with some defect structures distributed across the surface whose density increases with the InN concentration. On the other hand, Raman scattering experiments show three peaks in the frequency range between 500 and 900 cm-1, which have been assigned to InN-like and AlN-like E2 modes and A1(LO) mode of the InAlN. These results agree with theoretical calculations previously reported where two-mode and one-mode behavior was predicted for the E and A(LO) modes, respectively. Photoluminescence and photoluminescence excitation allowed us to determine the emission and absorption energies of the InAlN epilayers. Both energies display a redshift as the InN fraction increases. We find a roughly linear increase of the Stokes shift with InN fraction, with Stokes shift values of ≈0.5 eV in the composition range close to the lattice-matched condition.

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