Evidence of charge inversion in the reaction of singly charged anions with multiply charged macroions

1991 ◽  
Vol 95 (17) ◽  
pp. 6412-6415 ◽  
Author(s):  
Rachel R. Ogorzalek Loo ◽  
Harold R. Udseth ◽  
Richard D. Smith
Keyword(s):  
Charge Inversion ◽  
Multiply Charged ◽  
Singly Charged

The effect of reagent charge state on the charge inversion efficiency of singly charged polyatomic ions in the gas phase

2011 ◽  
Vol 13 (41) ◽  
pp. 18418 ◽  
Author(s):  
Kerry M. Hassell ◽  
Ryan T. Hilger ◽  
Scott A. McLuckey
Keyword(s):  
Gas Phase ◽  
Charge State ◽  
Charge Inversion ◽  
Polyatomic Ions ◽  
Singly Charged

scholarly journals Вероятность ионизации атомов, распыленных при бомбардировке поверхности металлов одно- и многозарядными ионами

2022 ◽  
Vol 92 (2) ◽  
pp. 315
Author(s):  
С.Ф. Белых ◽  
А.Д. Беккерман
Keyword(s):  
Electron Excitation ◽  
Ionization Probability ◽  
Multiply Charged Ions ◽  
Local Electron ◽  
Multiply Charged ◽  
Clean Metal Surface ◽  
Singly Charged ◽  
Charged Ions ◽  
Analytical Expressions ◽  
Clean Metal

The processes of ionization of atoms sputtered under bombardment of clean metal surface by singly and multiply charged ions with kinetic energy of several keV were studied. Within the framework of simple phenomenological model of ion formation, the relaxation of local electron excitation in metal was taking into account. Analytical expressions for estimation of ionization probability of sputtered atoms was obtain. It was shown, that in comparison with singly charged ions, bombardment of metals with multiply charged ions results to significant increase of ionization probability of sputtered atoms due to more efficient excitation of electrons and increase of relaxation time of this excitation.

Evidence from SIMS of Doubly-Charged Boron Contamination During Singly Charged-Ion Implantation

1990 ◽  
Vol 48 (2) ◽  
pp. 316-317
Author(s):  
D. S. Simons ◽  
P. H. Chi ◽  
D. B. Novotny
Keyword(s):  
Ion Implantation ◽  
Main Peak ◽  
Charged State ◽  
Exchange Reactions ◽  
Doubly Charged Ions ◽  
Multiply Charged ◽  
Residual Gas ◽  
Singly Charged ◽  
Doubly Charged ◽  
Charged Ions

When a dopant is introduced into a semiconductor material by ion implantation, it is sometimes desirable to accelerate and implant the ion in a multiply-charged state. This has the effect of increasing the energy and range of the ion without increasing the accelerating potential. Most modern ion implanters are of the pre-analysis type. In this design the ions are first accelerated through a modest extraction potential, e.g., 25 keV. This is followed by deflection for mass-to-charge selection in an analyzer magnet, after which the selected ions undergo final acceleration. Charge-exchange reactions between the doubly-charged ions and residual gas have been found to occur between the analyzing magnet and the final acceleration section. These reactions produce singly-charged ions that receive only half of the energy of the doubly-charged ions during final acceleration. For the case of B++ implantation the resulting implant profile shows a shallow-depth shoulder due to B+, the amplitude of which may be greater than 50% of the main peak.

Massenspektroskopische Festkörperuntersuchungen verbesserter Reproduzierbarkeit mit dem Gleichstrom-Abreißfunken im Vakuum zur lonenerzeugung

1963 ◽  
Vol 18 (8-9) ◽  
pp. 926-941 ◽  
Author(s):  
K. D. Schuy ◽  
H. Hintenberger
Keyword(s):  
Mass Spectra ◽  
Multiply Charged Ions ◽  
Doubly Charged Ions ◽  
Multiply Charged ◽  
Singly Charged ◽  
Main Component ◽  
Doubly Charged ◽  
Charged Ions ◽  
Spectrum Evaluation ◽  
Speed Of Analysis

Mass spectra obtained with the disjunctive d.c.-spark in vacuum show considerable improvement in accuracy and reproducibility over the conventional r.f.-spark of the DEMPSTER type. Higher ion currents increase the speed of analysis. A number of mass spectra were produced with a spectroscopic steel standard. The methods of visual and photometric spectrum evaluation are discussed in detail, using two quantities defined as “element sensitivity” and “normalized ionization sensitivity”. The former is a measure of how much more sensitive a given element can be photographically detected with the mass spectrograph than the main component of the sample (matrix element), while the latter indicates how much more sensitive multiply-charged ions of an element can be detected on the plate than singly-charged ions of the same element. Both element- and ionization sensitivities are reproducible to within approximately 20%. Furthermore, it is found, for most elements investigated, that the lines due to doubly-charged ions are more intense than those due to singly-charged ions and that the differences of element sensitivities of various elements decrease for ions of higher charge. The reproducibility of multiply-charged ions permits their use in the quantitative analysis of the sample.

Fragmentation of Highly Charged Metallic Clusters

1994 ◽  
Vol 366 ◽  
Author(s):  
Estela Blaisten-Barojas ◽  
Yibing Li ◽  
A. Belenki
Keyword(s):  
Alkali Metals ◽  
Metal Clusters ◽  
Liquid Drop ◽  
Critical Size ◽  
Single Atom ◽  
Liquid Drop Model ◽  
Multiply Charged ◽  
Energetic Balance ◽  
Singly Charged ◽  
Energy Of Formation

ABSTRACTMultiply charged metal clusters undergo fission at a certain size. This critical size can be predicted by the liquid drop model when some modifications are taken into consideration. In this work we revise the asymmetric liquid drop model (ALD) and modify it for the alkali metals. This modification addresses those fragmentation channels in which a parent cluster with charge Ze fissions into two fragments. One of the fragments is small and singly charged whereas the second fragment is large and carries the rest of the charge. A different energetic balance equation is presented in which the ionization energy of a single atom and the energy of formation of a small cluster are included. Results and comparison to experiments is provided for Na and Cs clusters. Prediction of the critical size of Na and Cs clusters with Ze>7 is part of the discussion.

Spectral Interferences in Secondary Ion Mass Spectrometry

1973 ◽  
Vol 27 (4) ◽  
pp. 274-279 ◽  
Author(s):  
B. N. Colby ◽  
C. A. Evans
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Molecular Ions ◽  
Spectral Interferences ◽  
Multiply Charged ◽  
Secondary Ions ◽  
Singly Charged ◽  
Charged Ions ◽  
Ion Species ◽  
Secondary Ion

The nature and origin of secondary ions resulting from the ion bombardment of a solid have been studied. In addition to the desired singly charged monoatomic ions, five other ion types are described in terms of their potential as spectral interferences. Except for the multiply charged ions, these interferences are molecular ions resulting from inter- and intraelement combinations. Instrumental parameters such as primary ion species, spectral polarity, and spectral resolution are shown to reduce the influence of these molecular ions.

Adaptation of the Paul trap for study of the reaction of multiply charged cations with singly charged anions

1997 ◽  
Vol 162 (1-3) ◽  
pp. 89-106 ◽  
Author(s):  
James L. Stephenson ◽  
Scott A. McLuckey
Keyword(s):  
Paul Trap ◽  
Multiply Charged ◽  
Singly Charged

Direct Observation of the Decomposition of Multiply Charged Ions into Singly Charged Fragments

1965 ◽  
Vol 42 (10) ◽  
pp. 3501-3509 ◽  
Author(s):  
K. E. McCulloh ◽  
T. E. Sharp ◽  
H. M. Rosenstock
Keyword(s):  
Direct Observation ◽  
Multiply Charged Ions ◽  
Multiply Charged ◽  
Singly Charged ◽  
Charged Ions

scholarly journals Влияние зарядового состояния ионов ксенона на профиль распределения по глубине при имплантации в кремний

2019 ◽  
Vol 53 (8) ◽  
pp. 1030
Author(s):  
Ю.В. Балакшин ◽  
А.В. Кожемяко ◽  
S. Petrovic ◽  
M. Erich ◽  
А.А. Шемухин ◽  
...  
Keyword(s):  
Single Crystal Silicon ◽  
Rutherford Backscattering ◽  
Rutherford Backscattering Spectroscopy ◽  
Multiply Charged Ions ◽  
Crystal Silicon ◽  
Multiply Charged ◽  
Irradiation Energy ◽  
Singly Charged ◽  
Channeling Effect ◽  
Charged Ions

AbstractExperimental depth distributions of the concentration of implanted xenon ions depending on their charge state and irradiation energy are presented. Xenon ions in charge states q = 1–20 and energies in the range from 50 to 400 keV are incorporated into single-crystal silicon. Irradiation is performed in the direction not coinciding with the crystallographic axes of the crystal to avoid the channeling effect. The ion fluence varies in the range of 5 × (10^14–10^15) ion/cm^2. The irradiation by singly charged ions and investigation of the samples by Rutherford backscattering spectroscopy is performed using an HVEE acceleration complex at Moscow State University. Multiply charged ions are implanted using a FAMA acceleration complex at the Vinća Institute of Nuclear Sciences. The depth distribution profiles of the incorporated ions are found using Rutherford backscattering spectroscopy. Experimental results are correlated with computer calculations. It is shown that the average projective path of multiply charged ions in most cases is shorter when compared with the average projected path of singly charged ions and the results of computer modeling.

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