Molecular precursors to boron nitride thin films. 1. Adsorption of diborane on ruthenium(0001), ammonia/ruthenium(0001), and oxygen/ruthenium(0001) surfaces

1992 ◽  
Vol 96 (1) ◽  
pp. 334-341 ◽  
Author(s):  
Jose A. Rodriguez ◽  
Charles M. Truong ◽  
Jason S. Corneille ◽  
D. Wayne Goodman
Keyword(s):  
Thin Films ◽  
Boron Nitride ◽  
Molecular Precursors

Molecular precursors to boron nitride thin films. 2. Coadsorption and reaction of hydrazine and diborane on ruthenium(0001)

1992 ◽  
Vol 96 (1) ◽  
pp. 341-347 ◽  
Author(s):  
Charles M. Truong ◽  
Jose A. Rodriguez ◽  
D. Wayne Goodman
Keyword(s):  
Thin Films ◽  
Boron Nitride ◽  
Molecular Precursors

Molecular Precursors to Boron Nitride then Films: the Reactions of Diborane with Ammonia and with Hydrazine on Ru(0001)

1991 ◽  
Vol 250 ◽  
Author(s):  
Charles M. Truong ◽  
José A. Rodriguez ◽  
Ming Cheng Wu ◽  
D. W. Goodman
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Boron Nitride ◽  
Mass Spectroscopy ◽  
Photoelectron Spectroscopy ◽  
Stoichiometric Ratio ◽  
X Ray ◽  
Molecular Precursors ◽  
Temperature Deposition ◽  
Boron Nitrogen

AbstractThe coadsorption and reaction of diborane with ammonia and with hydrazine on Ru(0001) have been studied using X-ray photoelectron spectroscopy (XPS) and thermal desorption mass spectroscopy (TDS). Diborane is found to decompose to atomic boron and hydrogen upon adsorption at T>200K. Multilayers of diborane and ammonia, deposited at 90K on Ru(0001), react when annealed to 600K. The XPS results indicate that boron-nitrogen adlayers can be formed by this reaction. These boron-nitrogen films are boron-rich and.decompose at temperatures higher than 1100K. Our TDS studies reveal that hydrazine decomposes extensively to NH3, N2, N and H on Ru(0001). Due to its higher reactivity, boron-nitrogen films of B/N stoichiometric ratio near unity are obtained when hydrazine is used rather than ammonia. In our studies, these films were formed by either simultaneously dosing B2H6 and N2H4 at 450K or by coadsorption of the reactants at 90K and subsequent annealing to 450K. These studies have shown that diborane and hydrazine can be successfully used as molecular precursors in the low temperature deposition of boron nitride thin-films.

ChemInform Abstract: Molecular Precursors to Boron Nitride Thin Films. Part 1. Adsorption of Diborane on Ru(0001), NH3/Ru(0001), and O/Ru(0001) Surfaces

ChemInform ◽  
2010 ◽  
Vol 23 (15) ◽  
pp. no-no
Author(s):  
J. A. RODRIGUEZ ◽  
C. M. TRUONG ◽  
J. S. CORNEILLE ◽  
D. W. GOODMAN
Keyword(s):  
Thin Films ◽  
Boron Nitride ◽  
Molecular Precursors

scholarly journals HfS2 thin films deposited at room temperature by an emerging technique, solution atomic layer deposition

2021 ◽  
Author(s):  
Yuanyuan Cao ◽  
Sha Zhu ◽  
Julien Bachmann
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Room Temperature ◽  
Atomic Layer ◽  
Two Dimensional ◽  
Molecular Precursors ◽  
Layer Deposition

The two-dimensional material and semiconducting dichalcogenide hafnium disulfide is deposited at room temperature by atomic layer deposition from molecular precursors dissolved in hexane.

scholarly journals Deposition of cadmium sulfide and zinc sulfide thin films by aerosol-assisted chemical vapors from molecular precursors

2015 ◽  
Vol 39 ◽  
pp. 169-178 ◽  
Author(s):  
Ashfaque Ahmed MEMON ◽  
Malik DILSHAD ◽  
Neerish REVAPRASADU ◽  
Mohammad Azad MALIK ◽  
James RAFTERY ◽  
...  
Keyword(s):  
Thin Films ◽  
Cadmium Sulfide ◽  
Zinc Sulfide ◽  
Molecular Precursors

Ion implantation induced phase transformation in carbon and boron nitride thin films

2005 ◽  
Vol 14 (8) ◽  
pp. 1395-1401 ◽  
Author(s):  
T.W.H. Oates ◽  
L. Ryves ◽  
F.A. Burgmann ◽  
B. Abendroth ◽  
M.M.M. Bilek ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Transformation ◽  
Boron Nitride ◽  
Ion Implantation

Utilization of cathodic arc evaporation for the deposition of boron nitride thin films

1997 ◽  
Vol 90 (1-2) ◽  
pp. 178-183 ◽  
Author(s):  
F. Richter ◽  
G. Krannich ◽  
J. Hahn ◽  
R. Pintaske ◽  
M. Friedrich ◽  
...  
Keyword(s):  
Thin Films ◽  
Boron Nitride ◽  
Cathodic Arc Evaporation ◽  
Arc Evaporation ◽  
Cathodic Arc

Piezoresistive granular metal thin films of platinum–boron nitride and platinum–alumina at higher strain levels

2018 ◽  
Vol 124 (23) ◽  
pp. 235308 ◽  
Author(s):  
Silvan Schwebke ◽  
Steffen Winter ◽  
Marcus Koch ◽  
Günter Schultes
Keyword(s):  
Thin Films ◽  
Boron Nitride ◽  
Metal Thin Films
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