A single-source precursor to titanium nitride thin films. Evidence for the intermediacy of imido complexes in the chemical vapor deposition process

1992 ◽  
Vol 114 (3) ◽  
pp. 1095-1097 ◽  
Author(s):  
Charles H. Winter ◽  
Philip H. Sheridan ◽  
T. Suren Lewkebandara ◽  
Mary Jane Heeg ◽  
James W. Proscia
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Titanium Nitride ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Chemical Vapor Deposition Process ◽  
Single Source ◽  
Imido Complexes ◽  
Single Source Precursor

Hafnium diboride thin films by chemical vapor deposition from a single source precursor

2005 ◽  
Vol 23 (6) ◽  
pp. 1619-1625 ◽  
Author(s):  
Sreenivas Jayaraman ◽  
Yu Yang ◽  
Do Young Kim ◽  
Gregory S. Girolami ◽  
John R. Abelson
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Single Source ◽  
Hafnium Diboride ◽  
Single Source Precursor

scholarly journals Accessing new 2D semiconductors with optical band gap: synthesis of iron-intercalated titanium diselenide thin films via LPCVD

RSC Advances ◽  
2018 ◽  
Vol 8 (40) ◽  
pp. 22552-22558 ◽  
Author(s):  
Clara Sanchez-Perez ◽  
Caroline E. Knapp ◽  
Ross H. Colman ◽  
Carlos Sotelo-Vazquez ◽  
Raija Oilunkaniemi ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Band Gap ◽  
Vapor Deposition ◽  
Optical Band Gap ◽  
Chemical Vapor ◽  
Single Source ◽  
2D Semiconductors ◽  
Single Source Precursor ◽  
Pressure Chemical

Fe-doped TiSe2 thin-films were synthesized via low pressure chemical vapor deposition (LPCVD) of a single source precursor: [Fe(η5-C5H4Se)2Ti(η5-C5H5)2]2 (1).

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