Conformal, Conducting Poly(3,4-ethylenedioxythiophene) Thin Films Deposited Using Bromine as the Oxidant in a Completely Dry Oxidative Chemical Vapor Deposition Process

2010 ◽  
Vol 22 (9) ◽  
pp. 2864-2868 ◽  
Author(s):  
Hitesh Chelawat ◽  
Sreeram Vaddiraju ◽  
Karen Gleason
APL Materials ◽  
2016 ◽  
Vol 4 (3) ◽  
pp. 030901 ◽  
Author(s):  
S. N. Heo ◽  
Y. Ishiguro ◽  
R. Hayakawa ◽  
T. Chikyow ◽  
Y. Wakayama

Carbon ◽  
2010 ◽  
Vol 48 (13) ◽  
pp. 3817-3824 ◽  
Author(s):  
Jian-Min Feng ◽  
Rui Wang ◽  
Ya-Li Li ◽  
Xiao-Hua Zhong ◽  
Lan Cui ◽  
...  

2020 ◽  
Vol 49 (38) ◽  
pp. 13462-13474
Author(s):  
Jan-Lucas Wree ◽  
Engin Ciftyurek ◽  
David Zanders ◽  
Nils Boysen ◽  
Aleksander Kostka ◽  
...  

Crystalline MoS2 thin films are deposited via MOCVD using a new molybdenum precursor, 1,4-di-tert-butyl-1,4-diazabutadienyl-bis(tert-butylimido)molybdenum(vi) [Mo(NtBu)2(tBu2DAD)], and elemental sulfur.


1989 ◽  
Vol 169 ◽  
Author(s):  
Jing Zhao ◽  
Henry O. Marcy ◽  
Lauren M. Tonge ◽  
Bruce W. Wessels ◽  
Tobin J. Marks ◽  
...  

AbstractWe report here a plasma‐enhanced organometallic chemical vapor deposition process for the preparation of YBa2Cu3O7‐x thin films using two rf plasma coupling configurations. For the films grown under a direct plasma glow, the YBa2Cu3O7‐x phase is not found in the as‐deposited state. However, by employing plasma‐activated nitrous oxide as the reactant gas, superconducting YBa2Cu3O7‐x films having a low carbon content and a mirror‐like surface have been prepared in‐situ at a substrate temperature of 610°C using an organometallic chemical vapor deposition process.


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