Mechanistic studies of copper thin-film growth from CuI and CuII .beta.-diketonates

1993 ◽  
Vol 115 (3) ◽  
pp. 1015-1024 ◽  
Author(s):  
Gregory S. Girolami ◽  
Patrick M. Jeffries ◽  
Lawrence H. Dubois
1993 ◽  
Vol 97 (45) ◽  
pp. 11781-11786 ◽  
Author(s):  
Chao Ming Chiang ◽  
Timothy M. Miller ◽  
Lawrence H. Dubois

2002 ◽  
Vol 721 ◽  
Author(s):  
Youhong Li ◽  
James B. Adams

AbstractTantalum can be used both as a diffusion barrier and an adhesion layer for copper metallization for semiconductor devices. Experiments show that β-Ta (200) substrates promote (111) texture growth in copper films. In this study, we first create an embedded atom method (EAM) Cu-Ta potential developed by our force matching method (FMM); then the potential is used for Molecular Dynamics (MD) simulations of initial copper thin film growth on β-Ta substrates. Both Cu/Ta interfacial structures and copper film structure are investigated. The relevance to (111) texturing is discussed.


2021 ◽  
Vol 118 (10) ◽  
pp. 102402
Author(s):  
Hiroaki Shishido ◽  
Akira Okumura ◽  
Tatsuya Saimyoji ◽  
Shota Nakamura ◽  
Shigeo Ohara ◽  
...  

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