Molecular Dynamics Simulation of Copper Thin Film Growth on β-Ta (002) Substrate
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AbstractTantalum can be used both as a diffusion barrier and an adhesion layer for copper metallization for semiconductor devices. Experiments show that β-Ta (200) substrates promote (111) texture growth in copper films. In this study, we first create an embedded atom method (EAM) Cu-Ta potential developed by our force matching method (FMM); then the potential is used for Molecular Dynamics (MD) simulations of initial copper thin film growth on β-Ta substrates. Both Cu/Ta interfacial structures and copper film structure are investigated. The relevance to (111) texturing is discussed.
2007 ◽
Vol 253
(18)
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pp. 7471-7477
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2007 ◽
Vol 253
(22)
◽
pp. 8896-8900
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