Highly stable solution-processed ZnO thin film transistors prepared via a simple Al evaporation process

2014 ◽  
Vol 2 (8) ◽  
pp. 1390-1395 ◽  
Author(s):  
Tae Sung Kang ◽  
Tae Yoon Kim ◽  
Gyu Min Lee ◽  
Hyun Chul Sohn ◽  
Jin Pyo Hong

The possible nature of the improved device stability is proposed by employing the formation of Al nanoparticles (NPs) on the back channel of a ZnO film and a partial Al atom (ion) impregnation process.

2015 ◽  
Vol 107 (15) ◽  
pp. 152102 ◽  
Author(s):  
Srinivas Gandla ◽  
Sankara Rao Gollu ◽  
Ramakant Sharma ◽  
Venkateshwarlu Sarangi ◽  
Dipti Gupta

2007 ◽  
Vol 129 (10) ◽  
pp. 2750-2751 ◽  
Author(s):  
Beng S. Ong ◽  
Chensha Li ◽  
Yuning Li ◽  
Yiliang Wu ◽  
Rafik Loutfy

2015 ◽  
Vol 106 (18) ◽  
pp. 183301 ◽  
Author(s):  
Zhengran He ◽  
Shoieb Shaik ◽  
Sheng Bi ◽  
Jihua Chen ◽  
Dawen Li

2014 ◽  
Vol 25 (1) ◽  
pp. 134-141 ◽  
Author(s):  
Mazran Esro ◽  
George Vourlias ◽  
Christopher Somerton ◽  
William I. Milne ◽  
George Adamopoulos

2010 ◽  
Vol 12 (12) ◽  
pp. 1966-1969 ◽  
Author(s):  
Byoungjun Park ◽  
Kyoungah Cho ◽  
Sungsu Kim ◽  
Sangsig Kim

2011 ◽  
Vol 21 (32) ◽  
pp. 11879 ◽  
Author(s):  
Yangho Jung ◽  
Taewhan Jun ◽  
Areum Kim ◽  
Keunkyu Song ◽  
Tae Hoon Yeo ◽  
...  

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