Highly stable solution-processed ZnO thin film transistors prepared via a simple Al evaporation process
2014 ◽
Vol 2
(8)
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pp. 1390-1395
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Keyword(s):
Zno Film
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The possible nature of the improved device stability is proposed by employing the formation of Al nanoparticles (NPs) on the back channel of a ZnO film and a partial Al atom (ion) impregnation process.
Keyword(s):
2007 ◽
Vol 129
(10)
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pp. 2750-2751
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Keyword(s):
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2014 ◽
Vol 25
(1)
◽
pp. 134-141
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Keyword(s):
2013 ◽
Vol 31
(5)
◽
pp. 050603
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Keyword(s):
2010 ◽
Vol 12
(12)
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pp. 1966-1969
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Keyword(s):
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2011 ◽
Vol 21
(32)
◽
pp. 11879
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Keyword(s):
2018 ◽
Vol 120
◽
pp. 395-401
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Keyword(s):