Facet-Dependent in Situ Growth of Nanoparticles in Epitaxial Thin Films: The Role of Interfacial Energy

2019 ◽  
Vol 141 (18) ◽  
pp. 7509-7517 ◽  
Author(s):  
Kun Joong Kim ◽  
Hyeon Han ◽  
Thomas Defferriere ◽  
Daseob Yoon ◽  
Suenhyoeng Na ◽  
...  
Keyword(s):  
Thin Films ◽  
Interfacial Energy ◽  
Epitaxial Thin Films ◽  
In Situ Growth

In situ growth of superconducting (Pb,Cu)2(Ba,Pb)2YCu2Oy epitaxial thin films by MOCVD

2000 ◽  
Vol 338 (3) ◽  
pp. 189-196 ◽  
Author(s):  
S.V Samoilenkov ◽  
G.E Adamov ◽  
O.Yu Gorbenko ◽  
I.E Graboy ◽  
A.R Kaul ◽  
...  
Keyword(s):  
Thin Films ◽  
Epitaxial Thin Films ◽  
In Situ Growth

Role of the oxygen plasma during in situ growth of YBa2Cu3O6+x thin films by pulsed laser deposition

1998 ◽  
Vol 307 (3-4) ◽  
pp. 298-306 ◽  
Author(s):  
J. Garcı́a López ◽  
D.H.A. Blank ◽  
H. Rogalla ◽  
J. Siejka
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Oxygen Plasma ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
In Situ Growth

In situ growth and doping of oxycarbonate Sr2CuO2(CO3) epitaxial thin films

1998 ◽  
Vol 303 (1-2) ◽  
pp. 11-20 ◽  
Author(s):  
K.-W. Chang ◽  
B.W. Wessels ◽  
W. Qian ◽  
V.P. Dravid ◽  
J.L. Schindler ◽  
...  
Keyword(s):  
Thin Films ◽  
Epitaxial Thin Films ◽  
In Situ Growth

In-situ growth of high-performance (Ag, Sn) co-doped CoSb3 thermoelectric thin films

2021 ◽  
Author(s):  
Zhuang-Hao Zheng ◽  
Jun-Yun Niu ◽  
Dong-Wei Ao ◽  
Bushra Jabar ◽  
Xiao-Lei Shi ◽  
...  
Keyword(s):  
Thin Films ◽  
High Performance ◽  
In Situ Growth ◽  
Thermoelectric Thin Films ◽  
Co Doped

The role of intermediate S-polymorph towards high piezoelectricity in La-doped BiFeO3 epitaxial thin films

2021 ◽  
Vol 207 ◽  
pp. 116683
Author(s):  
Jun Young Lee ◽  
Gopinathan Anoop ◽  
Sanjith Unithrattil ◽  
WooJun Seol ◽  
Youngki Yeo ◽  
...  
Keyword(s):  
Thin Films ◽  
Epitaxial Thin Films ◽  
La Doped

In Situ Growth of Metal–Organic Framework Thin Films with Gas Sensing and Molecule Storage Properties

Langmuir ◽  
2013 ◽  
Vol 29 (27) ◽  
pp. 8657-8664 ◽  
Author(s):  
Wei-Jin Li ◽  
Shui-Ying Gao ◽  
Tian-Fu Liu ◽  
Li-Wei Han ◽  
Zu-Jin Lin ◽  
...  
Keyword(s):  
Thin Films ◽  
Gas Sensing ◽  
Metal Organic Framework ◽  
In Situ Growth ◽  
Metal Organic ◽  
Storage Properties ◽  
Organic Framework

Interfacial adhesion of nanoporous zeolite thin films

2006 ◽  
Vol 21 (2) ◽  
pp. 505-511 ◽  
Author(s):  
Lili Hu ◽  
Junlan Wang ◽  
Zijian Li ◽  
Shuang Li ◽  
Yushan Yan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Interfacial Adhesion ◽  
Interfacial Strength ◽  
Future Generation ◽  
In Situ Growth ◽  
Seeded Growth ◽  
Si Substrates ◽  
Film Substrate

Nanoporous silica zeolite thin films are promising candidates for future generation low-dielectric constant (low-k) materials. During the integration with metal interconnects, residual stresses resulting from the packaging processes may cause the low-k thin films to fracture or delaminate from the substrates. To achieve high-quality low-k zeolite thin films, it is important to carefully evaluate their adhesion performance. In this paper, a previously reported laser spallation technique is modified to investigate the interfacial adhesion of zeolite thin film-Si substrate interfaces fabricated using three different methods: spin-on, seeded growth, and in situ growth. The experimental results reported here show that seeded growth generates films with the highest measured adhesion strength (801 ± 68 MPa), followed by the in situ growth (324 ± 17 MPa), then by the spin-on (111 ± 29 MPa). The influence of the deposition method on film–substrate adhesion is discussed. This is the first time that the interfacial strength of zeolite thin films-Si substrates has been quantitatively evaluated. This paper is of great significance for the future applications of low-k zeolite thin film materials.

A Pictorial Tracking of Basal Plane Dislocations in SiC Epitaxy

2010 ◽  
Vol 645-648 ◽  
pp. 271-276 ◽  
Author(s):  
Robert E. Stahlbush ◽  
Rachael L. Myers-Ward ◽  
Brenda L. VanMil ◽  
D. Kurt Gaskill ◽  
Charles R. Eddy
Keyword(s):  
Epitaxial Growth ◽  
Basal Plane ◽  
Reduction Process ◽  
Epitaxial Layers ◽  
In Situ Growth ◽  
Half Loop ◽  
Insight Into

The recently developed technique of UVPL imaging has been used to track the path of basal plane dislocations (BPDs) in SiC epitaxial layers. The glide of BPDs during epitaxial growth has been observed and the role of this glide in forming half-loop arrays has been examined. The ability to track the path of BPDs through the epitaxy has made it possible to develop a BPD reduction process for epitaxy grown on 8° offcut wafers, which uses an in situ growth interrupt and has achieved a BPD reduction of > 98%. The images also provide insight into the strong BPD reduction that typically occurs in epitaxy grown on 4° offcut wafers.

Combinatorial in situ Growth-and-Analysis with Synchrotron Radiation of Thin Films for Oxide Electronics

2007 ◽  
Author(s):  
M. Oshima ◽  
H. Kumigashira ◽  
K. Horiba ◽  
T. Ohnishi ◽  
M. Lippmaa ◽  
...  
Keyword(s):  
Thin Films ◽  
Synchrotron Radiation ◽  
In Situ Growth ◽  
Oxide Electronics
Sign in / Sign up

Export Citation Format

Share Document