In situ growth of SrTiO3 thin films prepared by AACVD from strontium and titanium oxide bisdipivaloylmethanates

1997 ◽  
Vol 101-103 (1-2) ◽  
pp. 183-190 ◽  
Author(s):  
J Peña
Keyword(s):  
Thin Films ◽  
Titanium Oxide ◽  
In Situ Growth

In-situ growth of high-performance (Ag, Sn) co-doped CoSb3 thermoelectric thin films

2021 ◽  
Author(s):  
Zhuang-Hao Zheng ◽  
Jun-Yun Niu ◽  
Dong-Wei Ao ◽  
Bushra Jabar ◽  
Xiao-Lei Shi ◽  
...  
Keyword(s):  
Thin Films ◽  
High Performance ◽  
In Situ Growth ◽  
Thermoelectric Thin Films ◽  
Co Doped

In Situ Growth of Metal–Organic Framework Thin Films with Gas Sensing and Molecule Storage Properties

Langmuir ◽  
2013 ◽  
Vol 29 (27) ◽  
pp. 8657-8664 ◽  
Author(s):  
Wei-Jin Li ◽  
Shui-Ying Gao ◽  
Tian-Fu Liu ◽  
Li-Wei Han ◽  
Zu-Jin Lin ◽  
...  
Keyword(s):  
Thin Films ◽  
Gas Sensing ◽  
Metal Organic Framework ◽  
In Situ Growth ◽  
Metal Organic ◽  
Storage Properties ◽  
Organic Framework

Interfacial adhesion of nanoporous zeolite thin films

2006 ◽  
Vol 21 (2) ◽  
pp. 505-511 ◽  
Author(s):  
Lili Hu ◽  
Junlan Wang ◽  
Zijian Li ◽  
Shuang Li ◽  
Yushan Yan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Interfacial Adhesion ◽  
Interfacial Strength ◽  
Future Generation ◽  
In Situ Growth ◽  
Seeded Growth ◽  
Si Substrates ◽  
Film Substrate

Nanoporous silica zeolite thin films are promising candidates for future generation low-dielectric constant (low-k) materials. During the integration with metal interconnects, residual stresses resulting from the packaging processes may cause the low-k thin films to fracture or delaminate from the substrates. To achieve high-quality low-k zeolite thin films, it is important to carefully evaluate their adhesion performance. In this paper, a previously reported laser spallation technique is modified to investigate the interfacial adhesion of zeolite thin film-Si substrate interfaces fabricated using three different methods: spin-on, seeded growth, and in situ growth. The experimental results reported here show that seeded growth generates films with the highest measured adhesion strength (801 ± 68 MPa), followed by the in situ growth (324 ± 17 MPa), then by the spin-on (111 ± 29 MPa). The influence of the deposition method on film–substrate adhesion is discussed. This is the first time that the interfacial strength of zeolite thin films-Si substrates has been quantitatively evaluated. This paper is of great significance for the future applications of low-k zeolite thin film materials.

Combinatorial in situ Growth-and-Analysis with Synchrotron Radiation of Thin Films for Oxide Electronics

2007 ◽  
Author(s):  
M. Oshima ◽  
H. Kumigashira ◽  
K. Horiba ◽  
T. Ohnishi ◽  
M. Lippmaa ◽  
...  
Keyword(s):  
Thin Films ◽  
Synchrotron Radiation ◽  
In Situ Growth ◽  
Oxide Electronics

Ultra-high vacuum chemical vapor deposition and in situ characterization of titanium oxide thin films

1991 ◽  
Vol 6 (9) ◽  
pp. 1913-1918 ◽  
Author(s):  
Jiong-Ping Lu ◽  
Rishi Raj
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Titanium Oxide ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Titanium Isopropoxide ◽  
Ultra High Vacuum

Chemical vapor deposition (CVD) of titanium oxide films has been performed for the first time under ultra-high vacuum (UHV) conditions. The films were deposited through the pyrolysis reaction of titanium isopropoxide, Ti(OPri)4, and in situ characterized by x-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). A small amount of C incorporation was observed during the initial stages of deposition, through the interaction of precursor molecules with the bare Si substrate. Subsequent deposition produces pure and stoichiometric TiO2 films. Si–O bond formation was detected in the film-substrate interface. Deposition rate was found to increase with the substrate temperature. Ultra-high vacuum chemical vapor deposition (UHV-CVD) is especially useful to study the initial stages of the CVD processes, to prepare ultra-thin films, and to investigate the composition of deposited films without the interference from ambient impurities.

A Uhv Tem Study of the in Situ Growth of Ultra-Thin Films of CoSi2 ON Si (100).

1988 ◽  
Vol 138 ◽  
Author(s):  
D. Loretto ◽  
J. M. Gibson ◽  
S. M. Yalisove
Keyword(s):  
Thin Films ◽  
In Situ Growth

In situ growth of CuSbS2 thin films by reactive co-sputtering for solar cells

2018 ◽  
Vol 84 ◽  
pp. 101-106 ◽  
Author(s):  
Liangliang Kang ◽  
Lianbo Zhao ◽  
Liangxing Jiang ◽  
Chang Yan ◽  
Kaiwen Sun ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
In Situ Growth
Sign in / Sign up

Export Citation Format

Share Document