Using a thermally-crosslinkable organosiloxane-based organic-inorganic hybrid material,
solution-processable gate dielectric layer for organic thin-film transistors (OTFTs) have been
fabricated. The hybrid dielectric was synthesized by the sol-gel process. The surface of the prepared
dielectric was modified by self-assembled monolayers (SAMs) treatment using wet chemical method.
Prior to surface modification, the chemical inertness of prepared dielectric was investigated by
immersing into various solvents such as toluene, acetone, isopropyl alcohol, and DI-water. The
existence of SAMs on the surface of dielectric was confirmed by measuring current density-electric
field characteristics and it was observed that surface morphology of SAMs-treated hybrid dielectric
was very smooth.