Strain-Modulated Half-Metallic Properties of Carbon-Doped Silicon Nanowires with Single Surface Dangling Bonds

2011 ◽  
Vol 116 (1) ◽  
pp. 893-900 ◽  
Author(s):  
Z.-Y. Zhang ◽  
W. Guo
Keyword(s):  
Silicon Nanowires ◽  
Dangling Bonds ◽  
Half Metallic ◽  
Carbon Doped ◽  
Doped Silicon

scholarly journals Half-metallic silicon nanowires: Multiple surface dangling bonds and nonmagnetic doping

2009 ◽  
Vol 80 (8) ◽  
Author(s):  
Zhuo Xu ◽  
Qing-Bo Yan ◽  
Qing-Rong Zheng ◽  
Gang Su
Keyword(s):  
Silicon Nanowires ◽  
Dangling Bonds ◽  
Half Metallic

Anisotropic in-Plane and out-of-Plane Strain Relaxation in Carbon-Doped Silicon Nanowires Evaluated by X-Ray Reciprocal Space Mapping

2021 ◽  
Vol MA2021-02 (12) ◽  
pp. 631-631
Author(s):  
Kazutoshi Yoshioka ◽  
Gai Ogasawara ◽  
Keita Sahara ◽  
Yuki Shibayama ◽  
Ichiro Hirosawa ◽  
...  
Keyword(s):  
Plane Strain ◽  
Silicon Nanowires ◽  
Strain Relaxation ◽  
Space Mapping ◽  
Reciprocal Space ◽  
Reciprocal Space Mapping ◽  
X Ray ◽  
Carbon Doped ◽  
Doped Silicon ◽  
Out Of Plane

Surface Segregation and Backscattering in Doped Silicon Nanowires

2006 ◽  
Vol 96 (16) ◽  
Author(s):  
M. V. Fernández-Serra ◽  
Ch. Adessi ◽  
X. Blase
Keyword(s):  
Silicon Nanowires ◽  
Surface Segregation ◽  
Doped Silicon

scholarly journals Nd-doped silicon nanowires with room temperature ferromagnetism and infrared photoemission

2009 ◽  
Vol 94 (26) ◽  
pp. 263117 ◽  
Author(s):  
Wei-Fan Lee ◽  
Chung-Yang Lee ◽  
Mei-Lin Ho ◽  
Chi-Te Huang ◽  
Chen-Ho Lai ◽  
...  
Keyword(s):  
Silicon Nanowires ◽  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
Doped Silicon

Charge Transport Characteristics in Boron-Doped Silicon Nanowires

2008 ◽  
Vol 55 (11) ◽  
pp. 2931-2938 ◽  
Author(s):  
Sarang Ingole ◽  
Pradeep Manandhar ◽  
Satishkumar B. Chikkannanavar ◽  
Elshan A. Akhadov ◽  
S. Tom Picraux
Keyword(s):  
Charge Transport ◽  
Silicon Nanowires ◽  
Boron Doped ◽  
Doped Silicon

Er-doped silicon nanowires with 1.54μm light-emitting and enhanced electrical and field emission properties

2007 ◽  
Vol 91 (9) ◽  
pp. 093133 ◽  
Author(s):  
C. T. Huang ◽  
C. L. Hsin ◽  
K. W. Huang ◽  
C. Y. Lee ◽  
P. H. Yeh ◽  
...  
Keyword(s):  
Field Emission ◽  
Silicon Nanowires ◽  
Light Emitting ◽  
Emission Properties ◽  
Field Emission Properties ◽  
Doped Silicon ◽  
Er Doped

25-nm Gate Length nMOSFET With Steep Channel Profiles Utilizing Carbon-Doped Silicon Layers (A P-Type Dopant Confinement Layer)

2011 ◽  
Vol 58 (5) ◽  
pp. 1302-1310 ◽  
Author(s):  
A Hokazono ◽  
H Itokawa ◽  
N Kusunoki ◽  
I Mizushima ◽  
S Inaba ◽  
...  
Keyword(s):  
Gate Length ◽  
Carbon Doped ◽  
Doped Silicon ◽  
P Type

Atomic layer deposition of carbon doped silicon oxide by precursor design and process tuning

2018 ◽  
Vol 36 (2) ◽  
pp. 021509 ◽  
Author(s):  
Meiliang Wang ◽  
Haripin Chandra ◽  
Xinjian Lei ◽  
Anupama Mallikarjunan ◽  
Kirk Cuthill ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Silicon Oxide ◽  
Atomic Layer ◽  
Carbon Doped ◽  
Layer Deposition ◽  
Doped Silicon

p-Block Element-doped Silicon Nanowires for Nitrogen Reduction Reaction: A DFT Study

Nanoscale ◽  
2021 ◽  
Author(s):  
Zhongyuan Guo ◽  
Lakshitha Jasin Arachchige ◽  
Siyao Qiu ◽  
Xiao Li Zhang ◽  
Yongjun Xu ◽  
...  
Keyword(s):  
Silicon Nanowires ◽  
Reduction Reaction ◽  
Dft Study ◽  
Block Element ◽  
Ambient Conditions ◽  
Nitrogen Reduction ◽  
Green Route ◽  
Doped Silicon

Photocatalytic nitrogen reduction reaction (NRR) is a promising, green route to chemically reducing N2 into NH3 under ambient conditions, correlating to the N2 fixation process of nitrogenase enzymes. To achieve...

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