scholarly journals Half-metallic silicon nanowires: Multiple surface dangling bonds and nonmagnetic doping

2009 ◽  
Vol 80 (8) ◽  
Author(s):  
Zhuo Xu ◽  
Qing-Bo Yan ◽  
Qing-Rong Zheng ◽  
Gang Su
Keyword(s):  
Silicon Nanowires ◽  
Dangling Bonds ◽  
Half Metallic

The Dangling Bonds and Molecular Adsorption on the Surface of Silicon Nanowires

2012 ◽  
Vol 2 (2) ◽  
pp. 188-190
Author(s):  
Xiaobao Yang ◽  
Linbao Luo
Keyword(s):  
Silicon Nanowires ◽  
Molecular Adsorption ◽  
Dangling Bonds

ChemInform Abstract: Half-Metallic and Magnetic Silicon Nanowires Functionalized by Transition-Metal Atoms

ChemInform ◽  
2014 ◽  
Vol 45 (41) ◽  
pp. no-no
Author(s):  
Engin Durgun ◽  
Salim Ciraci
Keyword(s):  
Transition Metal ◽  
Silicon Nanowires ◽  
Half Metallic ◽  
Metal Atoms ◽  
Transition Metal Atoms

scholarly journals Half-Metallic Silicon Nanowires: First-Principles Calculations

2007 ◽  
Vol 99 (25) ◽  
Author(s):  
E. Durgun ◽  
D. Çakır ◽  
N. Akman ◽  
S. Ciraci
Keyword(s):  
Silicon Nanowires ◽  
First Principles ◽  
First Principles Calculations ◽  
Half Metallic

Plasmon-assisted interaction of Si with light, for cancer hyperthermia and electromagnetic energy harvest

2020 ◽  
Vol 92 (2) ◽  
pp. 20101
Author(s):  
Behnam Kheyraddini Mousavi ◽  
Morteza Rezaei Talarposhti ◽  
Farshid Karbassian ◽  
Arash Kheyraddini Mousavi
Keyword(s):  
Silicon Nanowires ◽  
Metallic Nanoparticles ◽  
Near Infrared ◽  
Optical Transition ◽  
Electromagnetic Energy ◽  
Energy Harvest ◽  
Absorption Enhancement ◽  
Ir Absorption ◽  
Absorption Mechanism ◽  
Near Ir

Metal-assisted chemical etching (MACE) is applied for fabrication of silicon nanowires (SiNWs). We have shown the effect of amorphous sheath of SiNWs by treating the nanowires with SF6 and the resulting reduction of absorption bandwidth, i.e. making SiNWs semi-transparent in near-infrared (IR). For the first time, by treating the fabricated SiNWs with copper containing HF∕H2O2∕H2O solution, we have generated crystalline nanowires with broader light absorption spectrum, up to λ = 1 μm. Both the absorption and photo-luminescence (PL) of the SiNWs are observed from visible to IR wavelengths. It is found that the SiNWs have PL at visible and near Infrared wavelengths, which may infer presence of mechanisms such as forbidden gap transitions other can involvement of plasmonic resonances. Non-radiative recombination of excitons is one of the reasons behind absorption of SiNWs. Also, on the dielectric metal interface, the absorption mechanism can be due to plasmonic dissipation or plasmon-assisted generation of excitons in the indirect band-gap material. Comparison between nanowires with and without metallic nanoparticles has revealed the effect of nanoparticles on absorption enhancement. The broader near IR absorption, paves the way for applications like hyperthermia of cancer while the optical transition in near IR also facilitates harvesting electromagnetic energy at a broad spectrum from visible to IR.

Photoconductivity in Vacuum Deposited Films of Silicon-Based Polymers

1996 ◽  
Vol 444 ◽  
Author(s):  
H. Okumoto ◽  
M. Shimomura ◽  
N. Minami ◽  
Y. Tanabe
Keyword(s):  
Charge Transfer ◽  
Chemical Modification ◽  
Electronic Transport ◽  
Hole Transport ◽  
Electron Acceptors ◽  
Oxygen Atmosphere ◽  
Dangling Bonds ◽  
Silicon Based ◽  
Deposited Films

AbstractSilicon-based polymers with σconjugated electrons have specific properties; photoreactivity for microlithography and photoconductivity for hole transport materials. To explore the possibility of combining these two properties to develop photoresists with electronic transport capability, photoconductivity of polysilanes is investigated in connection with their photoinduced chemical modification. Increase in photocurrent is observed accompanying photoreaction of poly(dimethylsilane) vacuum deposited films. This increase is found to be greatly enhanced in oxygen atmosphere. Such changes of photocurrent can be explained by charge transfer to electron acceptors from Si dangling bonds postulated to be formed during photoreaction.

Metastable Defects in the Amorphous Silicon-Germanium Alloys

2003 ◽  
Vol 762 ◽  
Author(s):  
J. David Cohen
Keyword(s):  
Amorphous Silicon ◽  
Silicon Germanium ◽  
Dangling Bonds ◽  
Annealing Behavior ◽  
Fundamental Properties ◽  
Silicon Materials ◽  
Salient Features ◽  
The Individual ◽  
Amorphous Silicon Germanium ◽  
Silicon Germanium Alloys

AbstractThis paper first briefly reviews a few of the early studies that established some of the salient features of light-induced degradation in a-Si,Ge:H. In particular, I discuss the fact that both Si and Ge metastable dangling bonds are involved. I then review some of the recent studies carried out by members of my laboratory concerning the details of degradation in the low Ge fraction alloys utilizing the modulated photocurrent method to monitor the individual changes in the Si and Ge deep defects. By relating the metastable creation and annealing behavior of these two types of defects, new insights into the fundamental properties of metastable defects have been obtained for amorphous silicon materials in general. I will conclude with a brief discussion of the microscopic mechanisms that may be responsible.

HEAT TRANSFER ANALYSIS OF THIN & ROUGH SILICON NANOWIRES

2011 ◽  
Author(s):  
Changhyuk Lee ◽  
Jae Sik Jin ◽  
Joon Sik Lee
Keyword(s):  
Heat Transfer ◽  
Silicon Nanowires ◽  
Heat Transfer Analysis
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