25-nm Gate Length nMOSFET With Steep Channel Profiles Utilizing Carbon-Doped Silicon Layers (A P-Type Dopant Confinement Layer)

2011 ◽  
Vol 58 (5) ◽  
pp. 1302-1310 ◽  
Author(s):  
A Hokazono ◽  
H Itokawa ◽  
N Kusunoki ◽  
I Mizushima ◽  
S Inaba ◽  
...  
Keyword(s):  
Gate Length ◽  
Carbon Doped ◽  
Doped Silicon ◽  
P Type

Determination of arsenic atom distribution arsenic doped silicon using HOLZ-line analysis

1996 ◽  
Vol 54 ◽  
pp. 976-977
Author(s):  
Y. Kikuchi ◽  
N. Hashikawa ◽  
F. Uesugi ◽  
E. Wakai ◽  
K. Watanabe ◽  
...  
Keyword(s):  
Inelastic Scattering ◽  
Zone Axis ◽  
Experimental Result ◽  
Background Intensity ◽  
Crystal Thickness ◽  
Arsenic Atom ◽  
Doped Silicon ◽  
P Type ◽  
Line Analysis

In order to measure the concentration of arsenic atoms in nanometer regions of arsenic doped silicon, the HOLZ analysis is carried out underthe exact [011] zone axis observation. In previous papers, it is revealed that the position of two bright lines in the outer SOLZ structures on the[011] zone axis is little influenced by the crystal thickness and the background intensity caused by inelastic scattering electrons, but is sensitive to the concentration of As atoms substitutbnal for Siatomic site.As the result, it becomes possible to determine the concentration of electrically activated As atoms in silicon within an observed area by means of the simple fitting between experimental result and dynamical simulatioan. In the present work, in order to investigate the distribution of electrically activated As in silicon, the outer HOLZ analysis is applied using a nanometer sized probe of TEM equipped with a FEG.Czodiralsld-gown<100>orientated p-type Si wafers with a resistivity of 10 Ώ cm are used for the experiments.TheAs+ implantation is performed at a dose of 5.0X1015cm-2at 25keV.

GaAs PN Diodes with Heavily Carbon-Doped P-Type GaAs Grown by MOMBE

1990 ◽  
Vol 29 (Part 2, No. 10) ◽  
pp. L1731-L1734 ◽  
Author(s):  
Shinji Nozaki ◽  
Ryuji Miyake ◽  
Takumi Yamada ◽  
Makoto Konagai ◽  
Kiyoshi Takahashi
Keyword(s):  
Carbon Doped ◽  
P Type

Heavily carbon-doped p-type (In)GaAs grown by gas-source molecular beam epitaxy using diiodomethane

1995 ◽  
Vol 150 ◽  
pp. 221-226
Author(s):  
T. Tomioka ◽  
N. Okamoto ◽  
H. Ando ◽  
S. Yamaura ◽  
T. Fujii
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Carbon Doped ◽  
Gas Source ◽  
P Type

Carbon-doped p-type (0001) plane AlGaN (Al = 6-55%) with high hole density

2012 ◽  
Vol 249 (3) ◽  
pp. 459-463 ◽  
Author(s):  
Hideo Kawanishi ◽  
Tatsuya Tomizawa
Keyword(s):  
Hole Density ◽  
Carbon Doped ◽  
P Type

Atomic layer deposition of carbon doped silicon oxide by precursor design and process tuning

2018 ◽  
Vol 36 (2) ◽  
pp. 021509 ◽  
Author(s):  
Meiliang Wang ◽  
Haripin Chandra ◽  
Xinjian Lei ◽  
Anupama Mallikarjunan ◽  
Kirk Cuthill ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Silicon Oxide ◽  
Atomic Layer ◽  
Carbon Doped ◽  
Layer Deposition ◽  
Doped Silicon

Selective epitaxial growth ofin situ carbon-doped silicon on silicon substrates

2008 ◽  
Vol 40 (6-7) ◽  
pp. 1122-1125 ◽  
Author(s):  
Tetsuya Ikuta ◽  
Shigeru Fujita ◽  
Hayato Iwamoto ◽  
Shingo Kadomura ◽  
Takayoshi Shimura ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Silicon Substrates ◽  
Carbon Doped ◽  
Selective Epitaxial Growth ◽  
Doped Silicon

Laser Formation of Colloidal Sulfur- and Carbon-Doped Silicon Nanoparticles

2020 ◽  
Vol 128 (7) ◽  
pp. 897-901
Author(s):  
A. A. Nastulyavichus ◽  
S. I. Kudryashov ◽  
N. A. Smirnov ◽  
R. A. Khmel’nitskii ◽  
A. A. Rudenko ◽  
...  
Keyword(s):  
Silicon Nanoparticles ◽  
Carbon Doped ◽  
Colloidal Sulfur ◽  
Doped Silicon

Abnormal ${C}$ –${V}$ Hump Effect Induced by Hot Carriers in Gate Length-Dependent p-Type LTPS TFTs

2019 ◽  
Vol 66 (11) ◽  
pp. 4764-4767 ◽  
Author(s):  
Shin-Ping Huang ◽  
Yao-Kai Shih ◽  
Yu-Hua Chung ◽  
Wei-Han Chen ◽  
Terry Tai-Jui Wang ◽  
...  
Keyword(s):  
Gate Length ◽  
Hot Carriers ◽  
P Type
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