The Role of Hole Transport in Hybrid Inorganic/Organic Silicon/Poly(3,4-ethylenedioxy-thiophene):Poly(styrenesulfonate) Heterojunction Solar Cells

2013 ◽  
Vol 117 (18) ◽  
pp. 9049-9055 ◽  
Author(s):  
Matthias Pietsch ◽  
Muhammad Y. Bashouti ◽  
Silke Christiansen
Keyword(s):  
Solar Cells ◽  
Hole Transport ◽  
Heterojunction Solar Cells ◽  
Organic Silicon

Role of Surface Band Gap Widening in Cu(In, Ga)(Se, S)2 Thin-Films for the Photovoltaic Performance of ZnO/CdS/Cu(In, Ga)(Se, S)2 Heterojunction Solar Cells

2003 ◽  
Vol 763 ◽  
Author(s):  
U. Rau ◽  
M. Turcu
Keyword(s):  
Thin Films ◽  
Surface Layer ◽  
Solar Cells ◽  
Fermi Level ◽  
Band Gap ◽  
Photovoltaic Performance ◽  
Heterojunction Solar Cells ◽  
Fermi Level Pinning ◽  
Device Efficiency

AbstractNumerical simulations are used to investigate the role of the Cu-poor surface defect layer on Cu(In, Ga)Se2 thin-films for the photovoltaic performance of ZnO/CdS/Cu(In, Ga)Se2 heterojunction solar cells. We model the surface layer either as a material which is n-type doped, or as a material which is type-inverted due to Fermi-level pinning by donor-like defects at the interface with CdS. We further assume a band gap widening of this layer with respect to the Cu(In, Ga)Se2 bulk. This feature turns out to represent the key quality of the Cu(In, Ga)Se2 surface as it prevents recombination at the absorber/CdS buffer interface. Whether the type inversion results from n-type doping or from Fermi-level pinning is only of minor importance as long as the surface layer does not imply a too large number of excess defects in its bulk or at its interface with the normal absorber. With increasing number of those defects an n-type layer proofs to be less sensitive to material deterioration when compared to the type-inversion by Fermi-level pinning. For wide gap chalcopyrite solar cells the internal valence band offset between the surface layer and the chalcopyrite appears equally vital for the device efficiency. However, the unfavorable band-offsets of the ZnO/CdS/Cu(In, Ga)Se2 heterojunction limit the device efficiency because of the deterioration of the fill factor.

Role of a [6,6]-phenyl C61 butyric acid methyl ester homologue buffer layer for bulk-heterojunction solar cells

2013 ◽  
Vol 283 ◽  
pp. 33-37
Author(s):  
Jin Young Oh ◽  
Tae Il Lee ◽  
Woo Soon Jang ◽  
Soo Sang Chae ◽  
Jee Ho Park ◽  
...  
Keyword(s):  
Solar Cells ◽  
Methyl Ester ◽  
Buffer Layer ◽  
Butyric Acid ◽  
Bulk Heterojunction ◽  
Acid Methyl Ester ◽  
Heterojunction Solar Cells ◽  
Acid Methyl ◽  
Butyric Acid Methyl Ester

scholarly journals The role of heterointerfaces and subgap energy states on transport mechanisms in silicon heterojunction solar cells

2020 ◽  
Vol 28 (9) ◽  
pp. 935-945 ◽  
Author(s):  
Paul Procel ◽  
Haiyuan Xu ◽  
Aurora Saez ◽  
Carlos Ruiz‐Tobon ◽  
Luana Mazzarella ◽  
...  
Keyword(s):  
Solar Cells ◽  
Transport Mechanisms ◽  
Heterojunction Solar Cells ◽  
Energy States ◽  
Silicon Heterojunction Solar Cells

scholarly journals The role of cation and anion dopant incorporated into a ZnO electron transporting layer for polymer bulk heterojunction solar cells

RSC Advances ◽  
2019 ◽  
Vol 9 (65) ◽  
pp. 37714-37723 ◽  
Author(s):  
Soyeon Kim ◽  
Jaehoon Jeong ◽  
Quoc Viet Hoang ◽  
Joo Won Han ◽  
Adi Prasetio ◽  
...  
Keyword(s):  
Solar Cells ◽  
Work Function ◽  
Bulk Heterojunction ◽  
Heterojunction Solar Cells ◽  
Bulk Heterojunction Solar Cells ◽  
Conductivity Change ◽  
Polymer Bulk ◽  
Electron Transporting Layer

The role of cation and anion dopant incorporated into a ZnO layer was systematically investigated. We found that the work function was changed to favor electronic extraction only with Cl anion, while the conductivity change depended on the cation.

Notice of Removal Suns-Voc characteristics of Si heterojunction solar cells: Role of the heterointerface

2017 ◽  
Author(s):  
Raghu V. K. Chavali ◽  
Jian V. Li ◽  
Corsin Battaglia ◽  
Stefaan De Wolf ◽  
Jeffery L. Gray ◽  
...  
Keyword(s):  
Solar Cells ◽  
Heterojunction Solar Cells

scholarly journals Analysis of the role of hole transport layer materials to the performance of perovskite solar cell

2018 ◽  
Vol 67 ◽  
pp. 01021 ◽  
Author(s):  
Istighfari Dzikri ◽  
Michael Hariadi ◽  
Retno Wigajatri Purnamaningsih ◽  
Nji Raden Poespawati
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Short Circuit ◽  
Perovskite Solar Cells ◽  
Perovskite Solar Cell ◽  
Open Circuit ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Transport Layer

Research in solar cells is needed to maximize Indonesia’s vast solar potential that can reach up to 207.898 MW with an average radiation of 4.8 kWh/m2/day. Organometallic perovskite solar cells (PSCs) have gained immense attention due to their rapid increase in efficiency and compatibility with low-cost fabrication methods. Understanding the role of hole transport layer is very important to obtain highly efficient PSCs. In this work, we studied the effect of Hole Transport Layer (HTL) to the performance of perovskite solar cell. The devices with HTL exhibit substantial increase in power conversion efficiency, open circuit voltage and short circuit current compared to the device without HTL. The best performing device is PSC with CuSCN as HTL layer, namely Voc of 0.24, Isc of 1.79 mA, 0.27 FF and efficiency of 0.09%.

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