scholarly journals Mechanosynthesis of the Fast Fluoride Ion Conductor Ba1–xLaxF2+x: From the Fluorite to the Tysonite Structure

2014 ◽  
Vol 118 (13) ◽  
pp. 7117-7129 ◽  
Author(s):  
A. Düvel ◽  
J. Bednarcik ◽  
V. Šepelák ◽  
P. Heitjans

1981 ◽  
Vol 5 ◽  
pp. 633-635 ◽  
Author(s):  
M.W. Shafer ◽  
G.V. Chandrashekhar ◽  
R.A. Figat


2021 ◽  
Vol 21 ◽  
pp. 100523
Author(s):  
Tsuyoshi Takami ◽  
Takashi Saito ◽  
Takashi Kamiyama ◽  
Katsumi Kawahara ◽  
Toshiharu Fukunaga ◽  
...  


1995 ◽  
Vol 398 ◽  
Author(s):  
Georges Denes ◽  
M. Cecilia Madamba ◽  
Galina Milova

ABSTRACTPbSnF4 is the highest performance fluoride ion conductor known to date and is starting to be used for the fabrication of chemical sensors. Although several phase transitions have been reported, with conflicting results from different groups, the exact sequence of phase transitions versus temperature and the kinetics of the phase transformations remain unclear. We have prepared the three phases that can be stabilized at ambient temperature, i.e. o-, α- and β-PbSnF4, and studied the stability of each phase versus temperature. It appears that some of the phases transform very slowly to another under prolonged heating at constant temperature. This is very important since the conductivity is not necessarily the same for each phase, and therefore, a phase transition taking place slowly in the PbSnF4 used for the fabrication of a device, might not be detectable by a short time evaluation but, it could well alter its properties after prolonged use.





1999 ◽  
Vol 580 ◽  
Author(s):  
Georges Dénès ◽  
M. Cecilia Madamba

AbstractThe highest performance fluoride ion conductor, PbSnF4, has been applied for the fabrication of an ambient temperature amperometric oxygen sensor, where it is used in the polycrystalline form. However, the structure of this material is highly anisotropic, thus one could expect polycrystalline samples to give a performance strongly dependent on crystallite direction. We have shown that the tin electronic structure has a very strong influence on the local structure, which determines the preferred direction of crystal growth, which is itself responsible for the crystal shape. This, in turn, determines the direction of preferred orientation, which can dramatically alter the properties relative to a randomly oriented sample. The effect of minor impurities on the size of the crystallites and on the crystalline symmetry has been studied.



1994 ◽  
Vol 70-71 ◽  
pp. 253-258 ◽  
Author(s):  
R KANNO ◽  
K OHNO ◽  
H IZUMI ◽  
Y KAWAMOTO ◽  
T KAMIYAMA ◽  
...  


2002 ◽  
Vol 756 ◽  
Author(s):  
Michael F. Bell ◽  
Georges DéNés ◽  
Zhimeng Zhu

ABSTRACTMetastable CaSn2F6 has been prepared for the first time and characterized. It is a well crystalline material that leaches SnF2 in water to give the microcrystalline fluorite-type Ca1-xSnxF2 solid solution. In both materials, tin(II) is covalently bonded to fluorine, and thus carries a stereoactive non-bonding electronic pair. The electrical conductivity of CaSn2F6 was measured by the complex impedance method. The CaSn2F6 material was found to be a mixed conductor (τi = 0.50), with a F- conductivity a little below that of α-SnF2. On heating to 250°C, it decomposes irreversibly to give SnF2 and probably amorphous CaF2 (undetected).





1988 ◽  
Vol 135 ◽  
Author(s):  
Andreas Belzner ◽  
Heinz Schulz

AbstractThe LaF3-structure has been reinvestigated using diffraction data measured with twinned crystals.LaF3 is fluoride ion conductor with essentially 3-dimensional conductivity. The conduction perpendicular to the c-axis is shown to occur on paths which include all three sets of fluorine positions in the structure and which connect symmetrically non-equivalent nearest neighbor positions only. This is confirmed by determination of anharmonic temperature factors. The temperature dependence of the harmonic thermal parameters indicates that thermal vibrations are described rather than static disorder. The magnitude of the temperature factors of fluorine is consistent with an intrinsic activation energy of 0.8 eV for fluorine conduction.



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