Oxidation Kinetics of Hydrogenated Amorphous Carbon (a-CHx) Overcoats for Magnetic Data Storage Media

Langmuir ◽  
2007 ◽  
Vol 23 (10) ◽  
pp. 5485-5490 ◽  
Author(s):  
Yang Yun ◽  
Xiaoding Ma ◽  
Jing Gui ◽  
Esteban Broitman ◽  
Andrew J. Gellman
Author(s):  
Andrew J. Gellman ◽  
Yang Yun

Vapor phase lubrication (VPL) integrates media lubrication with the vacuum processing steps used throughout most of the hard disk media fabrication process. This avoids exposure of the unlubricated a-CHx overcoat surface to the ambient air and airborne contamination. In vapor lubrication the a-CHx surface can be oxidized under controlled conditions immediately prior to lubricant adsorption. The kinetics of a-CHx oxidation have been studied using x-ray photoemission spectroscopy in an apparatus that allows oxidation of freshly deposited a-CHx films. The dissociative sticking coefficient of oxygen is ∼10−6 and the initial oxidation kinetics can be described by a Langmuir-Hinshelwood mechanism.


Author(s):  
Yang Yun ◽  
Andrew J. Gellman

Vapor phase lubrication (VPL) integrates media lubrication with the vacuum processing steps used throughout most of the hard disk media fabrication process. This avoids exposure of the unlubricated hydrogenated amorphous carbon (a-CHx) overcoat to the ambient air and airborne contamination. In vapor lubrication the a-CHx surface can be oxidized under controlled conditions immediately prior to lubricant adsorption. The interaction between lubricants and a-CHx films can be tailored by controlled oxidation of the a-CHx in vapor phase lubrication.


2009 ◽  
Vol 23 (09) ◽  
pp. 2159-2165 ◽  
Author(s):  
SUDIP ADHIKARI ◽  
MASAYOSHI UMENO

Nitrogen incorporated hydrogenated amorphous carbon (a-C:N:H) thin films have been deposited by microwave surface-wave plasma chemical vapor deposition on silicon and quartz substrates, using helium, methane and nitrogen ( N 2) as plasma source. The deposited a-C:N:H films were characterized by their optical, structural and electrical properties through UV/VIS/NIR spectroscopy, Raman spectroscopy, atomic force microscope and current-voltage characteristics. The optical band gap decreased gently from 3.0 eV to 2.5 eV with increasing N 2 concentration in the films. The a-C:N:H film shows significantly higher electrical conductivity compared to that of N 2-free a-C:H film.


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