Single Wall Carbon Nanotubes for p-Type Ohmic Contacts to GaN Light-Emitting Diodes

Nano Letters ◽  
2004 ◽  
Vol 4 (5) ◽  
pp. 911-914 ◽  
Author(s):  
K. Lee ◽  
Z. Wu ◽  
Z. Chen ◽  
F. Ren ◽  
S. J. Pearton ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Ohmic Contacts ◽  
Light Emitting Diodes ◽  
Single Wall Carbon Nanotubes ◽  
Light Emitting ◽  
Single Wall Carbon ◽  
P Type

Effects of the Introduced Single-Wall Carbon Nanotubes on the Performance of Blue Phosphorescence Organic Light-Emitting Diodes

2011 ◽  
Vol 11 (11) ◽  
pp. 9661-9664 ◽  
Author(s):  
Liyan Gao ◽  
Suling Zhao ◽  
Zheng Xu ◽  
Fujun Zhang ◽  
Qinjun Sun ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Light Emitting Diodes ◽  
Organic Light Emitting Diodes ◽  
Single Wall Carbon Nanotubes ◽  
Light Emitting ◽  
Single Wall Carbon ◽  
Organic Light

Improved Light Output Power of GaN-Based Light Emitting Diodes by Enhancing Current Spreading Using Single-Wall Carbon Nanotubes

2010 ◽  
Vol 13 (2) ◽  
pp. H33 ◽  
Author(s):  
Se-Yeon Jung ◽  
Kyeong Heon Kim ◽  
Sang-Yong Jeong ◽  
Joon-Woo Jeon ◽  
Jihyung Moon ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Output Power ◽  
Light Emitting Diodes ◽  
Light Output ◽  
Single Wall Carbon Nanotubes ◽  
Light Output Power ◽  
Current Spreading ◽  
Light Emitting ◽  
Single Wall Carbon

Tuning and optimizing the intrinsic interactions between phthalocyanine-based PPV oligomers and single-wall carbon nanotubes toward n-type/p-type

2011 ◽  
Vol 2 (4) ◽  
pp. 652-660 ◽  
Author(s):  
Juergen Bartelmess ◽  
Christian Ehli ◽  
Juan-José Cid ◽  
Miguel García-Iglesias ◽  
Purificación Vázquez ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Single Wall Carbon Nanotubes ◽  
Single Wall Carbon ◽  
P Type

Highly Reflective and Low Resistance Indium Tin Oxide/Ag Ohmic Contacts to p-Type GaN for Flip-Chip Light Emitting Diodes

2005 ◽  
Vol 8 (11) ◽  
pp. G320 ◽  
Author(s):  
Woong-Ki Hong ◽  
June-O Song ◽  
Hyun-Gi Hong ◽  
Keun-Yong Ban ◽  
Takhee Lee ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Ohmic Contacts ◽  
Flip Chip ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Low Resistance ◽  
P Type

Assembling p-type molecules on single wall carbon nanotubes for photovoltaic devices

2009 ◽  
pp. 3705 ◽  
Author(s):  
Jennifer E. Klare ◽  
Ian P. Murray ◽  
Joshua Goldberger ◽  
Samuel I. Stupp
Keyword(s):  
Carbon Nanotubes ◽  
Single Wall Carbon Nanotubes ◽  
Photovoltaic Devices ◽  
Single Wall Carbon ◽  
P Type

FET Properties of Surface Silylated Single Wall Carbon Nanotubes

2006 ◽  
Vol 963 ◽  
Author(s):  
Ryotaro Kumashiro ◽  
Nobuya Hiroshiba ◽  
Hirotaka Ohashi ◽  
Takeshi Akasaka ◽  
Yutaka Maeda ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Field Effect Transistors ◽  
Electronic States ◽  
Single Wall Carbon Nanotubes ◽  
Chemical Modifications ◽  
Single Wall Carbon ◽  
Chemically Modified ◽  
Carrier Doping ◽  
P Type ◽  
Spread Sheet

ABSTRACTSingle wall carbon nanotubes (SWNTs) having semiconducting properties are promising as electronic materials for nano-scale devices in the future, and the electrical properties of SWNTs are of significantly fundamental and practical interests. It is well known that the field effect transistors (FETs) fabricated using semiconducting SWNTs show high performance in terms of the mobility. However, carriers in pristine SWNTs are mostly holes and, therefore, SWNTs -FETs usually show p-type properties. As for SWNTs, chemical carrier doping has been reported so far for controlling carrier concentration like graphite intercalations. Two major techniques in SWNTs are generally possible; one is endohedral doping and the other is the exohedral chemical modifications. It has been exemplified that doping with alkali metals can introduce electron carriers into SWNTs. Furthermore, the electrical transport properties of SWNTs were reported to be controlled by the endohedral insertion of organic molecules inside the SWNTs. A similar carrier doping could exohedrally be possible when the SWNTs surface is chemically modified. With such chemical modifications, the charge transfer from the substituent groups to SWNTs will be expected and this could modify the electronic states of SWNTs. We reported the FET properties of individual SWNTs exohedrally modified by Si-containing organic moieties, and demonstrated that p-type nanotubes can be converted to n-type ones. However, because of ununiformity of the surface-chemical modifications of SWNTs, the true effects of the exohedral modifications on FET properties were extremely difficult to be evaluated. In this meeting, we will present comparison of the FET properties of the exohedrally silylated SWNTs between separated individual and spread-sheet samples. For evaluating the FET properties, the chemically modified SWNTs have been dispersed on a FET substrate, and the measurements have been carried out at ambient temperature using a conventional method for a separated SWNTs and a spread-sheet SWNTs film. As a reference, the experiments were also made in the same manner on chemically non-modified CNTs. From the experimental results, it will be demonstrated that an n-type property can be enhanced by the exohedral modifications both in the case of the spread-sheet samples and in the case of the individual ones. We will discuss the effects of surface silylation on the electronic states of these SWNTs.

INTEGRATION OF N- AND P-CONTACTS TO GaN-BASED LIGHT EMITTING DIODES

2011 ◽  
Vol 20 (03) ◽  
pp. 521-525 ◽  
Author(s):  
WENTING HOU ◽  
THEERADETCH DETCHPROHM ◽  
CHRISTIAN WETZEL
Keyword(s):  
Ohmic Contacts ◽  
Light Emitting Diodes ◽  
Voltage Drop ◽  
Light Emitting ◽  
Low Resistance ◽  
Electrical Devices ◽  
P Type ◽  
Lower Series ◽  
Post Deposition

Low-resistance Ohmic contacts are essential for the fabrication of electrical devices. While low contact resistance has been achieved to p -type layers or n -type layers separately, contacts are likely to degrade when both types need to be integrated into a single fabrication process, in particular when prior mesa etching is required. We present a solution to the problem, resulting in low-resistance Ohmic contacts on n -type GaN layers without post-deposition thermal anneal, while maintaining the quality of typical p -type contacts. We implement an integrated process for both, n - and p -contacts, involving an oxygen pretreatment to fabricate light emitting diodes with lower series resistance in the contacts and lower voltage drop at high current when compared to separately optimized contacts.

High-reflectivity Pd∕Ni∕Al∕Ti∕Au ohmic contacts to p-type GaN for ultraviolet light-emitting diodes

2004 ◽  
Vol 85 (14) ◽  
pp. 2797-2799 ◽  
Author(s):  
Guan-Ting Chen ◽  
Chang-Chi Pan ◽  
Chi-Shin Fang ◽  
Tzu-Chien Huang ◽  
Jen-Inn Chyi ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Ohmic Contacts ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
High Reflectivity ◽  
P Type ◽  
Ultraviolet Light Emitting Diodes
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