Assembling p-type molecules on single wall carbon nanotubes for photovoltaic devices

2009 ◽  
pp. 3705 ◽  
Author(s):  
Jennifer E. Klare ◽  
Ian P. Murray ◽  
Joshua Goldberger ◽  
Samuel I. Stupp
Keyword(s):  
Carbon Nanotubes ◽  
Single Wall Carbon Nanotubes ◽  
Photovoltaic Devices ◽  
Single Wall Carbon ◽  
P Type

Tuning and optimizing the intrinsic interactions between phthalocyanine-based PPV oligomers and single-wall carbon nanotubes toward n-type/p-type

2011 ◽  
Vol 2 (4) ◽  
pp. 652-660 ◽  
Author(s):  
Juergen Bartelmess ◽  
Christian Ehli ◽  
Juan-José Cid ◽  
Miguel García-Iglesias ◽  
Purificación Vázquez ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Single Wall Carbon Nanotubes ◽  
Single Wall Carbon ◽  
P Type

FET Properties of Surface Silylated Single Wall Carbon Nanotubes

2006 ◽  
Vol 963 ◽  
Author(s):  
Ryotaro Kumashiro ◽  
Nobuya Hiroshiba ◽  
Hirotaka Ohashi ◽  
Takeshi Akasaka ◽  
Yutaka Maeda ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Field Effect Transistors ◽  
Electronic States ◽  
Single Wall Carbon Nanotubes ◽  
Chemical Modifications ◽  
Single Wall Carbon ◽  
Chemically Modified ◽  
Carrier Doping ◽  
P Type ◽  
Spread Sheet

ABSTRACTSingle wall carbon nanotubes (SWNTs) having semiconducting properties are promising as electronic materials for nano-scale devices in the future, and the electrical properties of SWNTs are of significantly fundamental and practical interests. It is well known that the field effect transistors (FETs) fabricated using semiconducting SWNTs show high performance in terms of the mobility. However, carriers in pristine SWNTs are mostly holes and, therefore, SWNTs -FETs usually show p-type properties. As for SWNTs, chemical carrier doping has been reported so far for controlling carrier concentration like graphite intercalations. Two major techniques in SWNTs are generally possible; one is endohedral doping and the other is the exohedral chemical modifications. It has been exemplified that doping with alkali metals can introduce electron carriers into SWNTs. Furthermore, the electrical transport properties of SWNTs were reported to be controlled by the endohedral insertion of organic molecules inside the SWNTs. A similar carrier doping could exohedrally be possible when the SWNTs surface is chemically modified. With such chemical modifications, the charge transfer from the substituent groups to SWNTs will be expected and this could modify the electronic states of SWNTs. We reported the FET properties of individual SWNTs exohedrally modified by Si-containing organic moieties, and demonstrated that p-type nanotubes can be converted to n-type ones. However, because of ununiformity of the surface-chemical modifications of SWNTs, the true effects of the exohedral modifications on FET properties were extremely difficult to be evaluated. In this meeting, we will present comparison of the FET properties of the exohedrally silylated SWNTs between separated individual and spread-sheet samples. For evaluating the FET properties, the chemically modified SWNTs have been dispersed on a FET substrate, and the measurements have been carried out at ambient temperature using a conventional method for a separated SWNTs and a spread-sheet SWNTs film. As a reference, the experiments were also made in the same manner on chemically non-modified CNTs. From the experimental results, it will be demonstrated that an n-type property can be enhanced by the exohedral modifications both in the case of the spread-sheet samples and in the case of the individual ones. We will discuss the effects of surface silylation on the electronic states of these SWNTs.

Single Wall Carbon Nanotubes for p-Type Ohmic Contacts to GaN Light-Emitting Diodes

Nano Letters ◽  
2004 ◽  
Vol 4 (5) ◽  
pp. 911-914 ◽  
Author(s):  
K. Lee ◽  
Z. Wu ◽  
Z. Chen ◽  
F. Ren ◽  
S. J. Pearton ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Ohmic Contacts ◽  
Light Emitting Diodes ◽  
Single Wall Carbon Nanotubes ◽  
Light Emitting ◽  
Single Wall Carbon ◽  
P Type

Effects of inclusion dimensions and p-type doping in the terahertz spectra of composite materials containing bundles of single-wall carbon nanotubes

2012 ◽  
Vol 6 (1) ◽  
pp. 061707 ◽  
Author(s):  
Mikhail V. Shuba ◽  
Alesia G. Paddubskaya ◽  
Polina P. Kuzhir ◽  
Gregory Ya. Slepyan ◽  
Dalius Seliuta ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Composite Materials ◽  
Single Wall Carbon Nanotubes ◽  
Single Wall Carbon ◽  
P Type

Photovoltaic Devices Based on Single Wall Carbon Nanotubes

2009 ◽  
Vol 1210 ◽  
Author(s):  
Zhongrui Li ◽  
Viney Saini ◽  
Shawn Edward Bourdo ◽  
Liqiu Zheng ◽  
Enkeleda Dervishi ◽  
...  
Keyword(s):  
Thin Film ◽  
Carbon Nanotubes ◽  
Solar Cells ◽  
Carrier Transport ◽  
Single Wall Carbon Nanotubes ◽  
Chemical Doping ◽  
Single Wall Carbon ◽  
Aspect Ratios ◽  
Conversion Materials ◽  
P Type

AbstractSingle-wall carbon nanotubes (SWNTs) are potentially an attractive material for PV applications due to their many unique structural and electrical properties. SWNTs can be directly configured as energy conversion materials to fabricate thin-film solar cells, with nanotubes serving as both photogeneration sites and charge carriers collecting/transport layers. SWNTs can be modified into either p-type conductor through chemical doping (like thionyl chloride, or just exposure to air) or n-type conductor through polymer (like polyethylene imine) functionalization. The solar cells consist of either a semitransparent thin film of p-type nanotubes deposited on an n-type silicon wafer or a semitransparent thin film of n-type SWNT on p-type substrate to create high-density p-n heterojunctions between nanotubes and silicon substrate to favor charge separation and extract electrons and holes. The high aspect ratios and large surface area of nanotubes can be beneficial to exciton dissociation and charge carrier transport thus improving the power conversion efficiency.

Quantum Dots and Their Tunnel Barrier in Semiconducting Single-Wall Carbon Nanotubes with a p-Type Behavior

2005 ◽  
Vol 44 (4B) ◽  
pp. 2596-2599 ◽  
Author(s):  
Daiju Tsuya ◽  
Masaki Suzuki ◽  
Yoshinobu Aoyagi ◽  
Koji Ishibashi
Keyword(s):  
Carbon Nanotubes ◽  
Quantum Dots ◽  
Single Wall Carbon Nanotubes ◽  
Tunnel Barrier ◽  
Single Wall Carbon ◽  
P Type

Enhanced UV photoresponse of KrF-laser-synthesized single-wall carbon nanotubes/n-silicon hybrid photovoltaic devices

2012 ◽  
Vol 23 (21) ◽  
pp. 215206 ◽  
Author(s):  
V Le Borgne ◽  
L A Gautier ◽  
P Castrucci ◽  
S Del Gobbo ◽  
M De Crescenzi ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Single Wall Carbon Nanotubes ◽  
Photovoltaic Devices ◽  
Single Wall Carbon ◽  
Krf Laser

Near-infrared photoconductive and photovoltaic devices using single-wall carbon nanotubes in conductive polymer films

2005 ◽  
Vol 98 (8) ◽  
pp. 084314 ◽  
Author(s):  
S. Kazaoui ◽  
N. Minami ◽  
B. Nalini ◽  
Y. Kim ◽  
K. Hara
Keyword(s):  
Carbon Nanotubes ◽  
Polymer Films ◽  
Near Infrared ◽  
Conductive Polymer ◽  
Single Wall Carbon Nanotubes ◽  
Photovoltaic Devices ◽  
Single Wall Carbon
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