AbstractWe apply quantitative chemical mapping techniques to study thermal interdiffusion and ion-implantation induced intermixing at single heterointerfaces at the atomic level. Our results show thermal interdiffusion to be strongly depth dependent. This is related to the need for the presence of native point defects (interstitials and vacancies) to bring about interdiffusion. Since their initial concentration in the bulk is negligible, the point defects must be injected at the surface and transported to the interface for interdiffusion to occur. In the case of ion-implanted samples, we find the passage of a single energetic ion through a sample at 77 K causes significant intermixing, even when the sample receives no subsequent thermal treatment.
Development of an extended matrix-matched calibration protocol for fast, high-resolution, quantitative chemical mapping of major and trace elements of polymineralic samples by laser-ablation coupled to time-of-flight-mass-spectrometry (LA-ICP-TOF-MS).
