Prospects for quantitative chemical mapping of surfaces using the ‘surface analysis by laser ionization’ (SALI) technique

Vacuum ◽  
1990 ◽  
Vol 41 (7-9) ◽  
pp. 1665-1668 ◽  
Author(s):  
D.G. Welkie ◽  
S. Daiser ◽  
C.H. Becker
MRS Bulletin ◽  
1987 ◽  
Vol 12 (6) ◽  
pp. 52-59 ◽  
Author(s):  
J.B. Pallix ◽  
C.H. Becker ◽  
N. Newman

AbstractAn overview is presented of a recently developed surface analysis method that combines (1) desorption of neutral atoms and molecules from a sample, typically by sputtering, (2) efficient uniform ionization close to but above the surface by an intense ultraviolet laser beam, and (3) time-of-flight mass spectrometry. This technique, surface analysis by laser ionization, or SALI, provides extremely efficient and sensitive quantitative analysis of surfaces and materials with high depth resolution. Essentially any type of material can be analyzed as evidenced by the examples presented here: the Au-GaAs system, a phosphor-silicate glass, and a bulk polymer.


2019 ◽  
Vol 25 (S2) ◽  
pp. 1772-1773
Author(s):  
Blanka E. Janicek ◽  
Joshua G. Hinman ◽  
Jordan H. Hinman ◽  
Sang hyun Bae ◽  
Meng Wu ◽  
...  

Nano Letters ◽  
2006 ◽  
Vol 6 (6) ◽  
pp. 1202-1206 ◽  
Author(s):  
Christopher R. McNeill ◽  
Benjamin Watts ◽  
Lars Thomsen ◽  
Warwick J. Belcher ◽  
Neil C. Greenham ◽  
...  

1993 ◽  
Vol 97 (12) ◽  
pp. 1688-1691 ◽  
Author(s):  
H. Schröder ◽  
M. Wagner ◽  
S. Kaesdorf ◽  
K. L. Kompa

1989 ◽  
Vol 163 ◽  
Author(s):  
A. Ourmazd ◽  
Y. Kim ◽  
M. Bode

AbstractWe apply quantitative chemical mapping techniques to study thermal interdiffusion and ion-implantation induced intermixing at single heterointerfaces at the atomic level. Our results show thermal interdiffusion to be strongly depth dependent. This is related to the need for the presence of native point defects (interstitials and vacancies) to bring about interdiffusion. Since their initial concentration in the bulk is negligible, the point defects must be injected at the surface and transported to the interface for interdiffusion to occur. In the case of ion-implanted samples, we find the passage of a single energetic ion through a sample at 77 K causes significant intermixing, even when the sample receives no subsequent thermal treatment.


1992 ◽  
Vol 47 (1-3) ◽  
pp. 167-172 ◽  
Author(s):  
F.H. Baumann ◽  
M. Bode ◽  
Y. Kim ◽  
A. Ourmazd

2008 ◽  
Vol 14 (S2) ◽  
pp. 408-409
Author(s):  
K Mahalingam ◽  
HJ Haugan ◽  
GJ Brown ◽  
KG Eyink

Extended abstract of a paper presented at Microscopy and Microanalysis 2008 in Albuquerque, New Mexico, USA, August 3 – August 7, 2008


2005 ◽  
Vol 16 (5) ◽  
pp. 611-627 ◽  
Author(s):  
Tohru Araki ◽  
Adam P. Hitchcock ◽  
Feng Shen ◽  
Patricia L. Chang ◽  
Maggie Wang ◽  
...  

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