Wafer-Level Photocatalytic Water Splitting on GaN Nanowire Arrays Grown by Molecular Beam Epitaxy

Nano Letters ◽  
2011 ◽  
Vol 11 (6) ◽  
pp. 2353-2357 ◽  
Author(s):  
Defa Wang ◽  
Adrien Pierre ◽  
Md Golam Kibria ◽  
Kai Cui ◽  
Xueguang Han ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Water Splitting ◽  
Molecular Beam ◽  
Nanowire Arrays ◽  
Wafer Level ◽  
Photocatalytic Water Splitting ◽  
Gan Nanowire

Polarity-Controlled GaN/AlN Nucleation Layers for Selective-Area Growth of GaN Nanowire Arrays on Si(111) Substrates by Molecular Beam Epitaxy

2015 ◽  
Vol 16 (2) ◽  
pp. 596-604 ◽  
Author(s):  
Matt D. Brubaker ◽  
Shannon M. Duff ◽  
Todd E. Harvey ◽  
Paul T. Blanchard ◽  
Alexana Roshko ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Nanowire Arrays ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth ◽  
Gan Nanowire

Structure and Optical Properties of ZnO Nanowire Arrays Grown by Plasma-assisted Molecular Beam Epitaxy

2012 ◽  
Vol 27 (3) ◽  
pp. 301-304 ◽  
Author(s):  
Zhi-Yuan ZHENG ◽  
Tie-Xin CHEN ◽  
Liang CAO ◽  
Yu-Yan HAN ◽  
Fa-Qiang XU
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Nanowire Arrays ◽  
Zno Nanowire ◽  
Zno Nanowire Arrays

scholarly journals Stabilization of GaAs photoanodes by in situ deposition of nickel-borate surface catalysts as hole trapping sites

2019 ◽  
Vol 3 (3) ◽  
pp. 814-822 ◽  
Author(s):  
Chaoran Jiang ◽  
Jiang Wu ◽  
Savio J. A. Moniz ◽  
Daqian Guo ◽  
Mingchu Tang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Water Splitting ◽  
Molecular Beam ◽  
Photoelectrochemical Water Splitting ◽  
Hole Trapping ◽  
In Situ Deposition ◽  
Trapping Sites

A nanocomposite Ni–B/Ga(As)Ox/GaAs photoanode fabricated by combining molecular beam epitaxy with in situ photoassisted electrodeposition enables efficient and stable photoelectrochemical water splitting.

Selective-area growth of InAs nanowire arrays on Si3N4/Si(111) by molecular beam epitaxy

2017 ◽  
Author(s):  
K. Zhang ◽  
V. Ray ◽  
P. Herrera-Fierro ◽  
J. R. Sink ◽  
F. Toor ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Nanowire Arrays ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth

Widely tunable alloy composition and crystal structure in catalyst-free InGaAs nanowire arrays grown by selective area molecular beam epitaxy

2016 ◽  
Vol 108 (5) ◽  
pp. 053110 ◽  
Author(s):  
J. Treu ◽  
M. Speckbacher ◽  
K. Saller ◽  
S. Morkötter ◽  
M. Döblinger ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Alloy Composition ◽  
Nanowire Arrays ◽  
Catalyst Free ◽  
Selective Area

Photoelectrochemical Water Splitting and Hydrogen Generation Using InGaN/GaN Nanowire Arrays

2014 ◽  
Author(s):  
B. Alotaibi ◽  
S. Fan ◽  
H.P.T. Nguyen ◽  
S. Zhao ◽  
M.G. Kibria ◽  
...  
Keyword(s):  
Water Splitting ◽  
Hydrogen Generation ◽  
Nanowire Arrays ◽  
Photoelectrochemical Water Splitting ◽  
Gan Nanowire

Catalyst-Free InGaN/GaN Nanowire Light Emitting Diodes Grown on (001) Silicon by Molecular Beam Epitaxy

Nano Letters ◽  
2010 ◽  
Vol 10 (9) ◽  
pp. 3355-3359 ◽  
Author(s):  
Wei Guo ◽  
Meng Zhang ◽  
Animesh Banerjee ◽  
Pallab Bhattacharya
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Catalyst Free ◽  
Gan Nanowire

scholarly journals Processes of formation of epitaxial arrays of self-catalytic GaP nanowires on Si (111)

2021 ◽  
Vol 2103 (1) ◽  
pp. 012127
Author(s):  
S V Fedina ◽  
V V Fedorov ◽  
Yu S Berdnikov ◽  
G A Sapunov ◽  
I S Mukhin
Keyword(s):  
Molecular Beam Epitaxy ◽  
Growth Temperature ◽  
Surface Density ◽  
Molecular Beam ◽  
Growth Conditions ◽  
Nanowire Arrays

Abstract This study is devoted to the investigation of the effect of growth conditions (growth temperature, values of molecular beam fluxes) on the formation of self-catalytic GaP NW on Si(111), namely surface density, orientation and NW morphology. Nanowire arrays were grown on Si (111) by the plasma-assisted molecular beam epitaxy. It was determined that an increase of the temperature and a decrease of the Ga flux, while maintaining the V/III ratio, reduces the inclined NWs and parasitic islands nucleation probability.

Atomic-Scale Origin of Long-Term Stability and High Performance ofp-GaN Nanowire Arrays for Photocatalytic Overall Pure Water Splitting

2016 ◽  
Vol 28 (38) ◽  
pp. 8388-8397 ◽  
Author(s):  
Md Golam Kibria ◽  
Ruimin Qiao ◽  
Wanli Yang ◽  
Idris Boukahil ◽  
Xianghua Kong ◽  
...  
Keyword(s):  
Water Splitting ◽  
High Performance ◽  
Pure Water ◽  
Nanowire Arrays ◽  
Atomic Scale ◽  
Term Stability ◽  
Long Term Stability ◽  
Gan Nanowire
Sign in / Sign up

Export Citation Format

Share Document