scholarly journals Direct Work Function Measurement by Gas Phase Photoelectron Spectroscopy and Its Application on PbS Nanoparticles

Nano Letters ◽  
2013 ◽  
Vol 13 (12) ◽  
pp. 6176-6182 ◽  
Author(s):  
Stephanus Axnanda ◽  
Marcus Scheele ◽  
Ethan Crumlin ◽  
Baohua Mao ◽  
Rui Chang ◽  
...  

2D Materials ◽  
2020 ◽  
Vol 7 (2) ◽  
pp. 025014
Author(s):  
Dooyong Lee ◽  
Jae Hyuck Jang ◽  
Wooseok Song ◽  
Joonhee Moon ◽  
Yooseok Kim ◽  
...  




Author(s):  
Chao-Jiang Zhang ◽  
Peng Wang ◽  
Xi-Ling Xu ◽  
Hong-Guang Xu ◽  
Weijun Zheng

The AlnC5- (n = 1-5) clusters were detected in the gas-phase and were investigated by mass-selected anion photoelectron spectroscopy. The structures of AlnC5-/0 (n = 1-5) were explored by theoretical...



Materials ◽  
2021 ◽  
Vol 14 (7) ◽  
pp. 1595
Author(s):  
Nomin Lim ◽  
Yeon Sik Choi ◽  
Alexander Efremov ◽  
Kwang-Ho Kwon

This research work deals with the comparative study of C6F12O + Ar and CF4 + Ar gas chemistries in respect to Si and SiO2 reactive-ion etching processes in a low power regime. Despite uncertain applicability of C6F12O as the fluorine-containing etchant gas, it is interesting because of the liquid (at room temperature) nature and weaker environmental impact (lower global warming potential). The combination of several experimental techniques (double Langmuir probe, optical emission spectroscopy, X-ray photoelectron spectroscopy) allowed one (a) to compare performances of given gas systems in respect to the reactive-ion etching of Si and SiO2; and (b) to associate the features of corresponding etching kinetics with those for gas-phase plasma parameters. It was found that both gas systems exhibit (a) similar changes in ion energy flux and F atom flux with variations on input RF power and gas pressure; (b) quite close polymerization abilities; and (c) identical behaviors of Si and SiO2 etching rates, as determined by the neutral-flux-limited regime of ion-assisted chemical reaction. Principal features of C6F12O + Ar plasma are only lower absolute etching rates (mainly due to the lower density and flux of F atoms) as well as some limitations in SiO2/Si etching selectivity.



2016 ◽  
Vol 7 (2) ◽  
pp. 1142-1150 ◽  
Author(s):  
David A. Hrovat ◽  
Gao-Lei Hou ◽  
Bo Chen ◽  
Xue-Bin Wang ◽  
Weston Thatcher Borden

The CO3 radical anion (CO3˙−) has been formed by electrospraying carbonate dianion (CO32−) into the gas phase.



Crystals ◽  
2020 ◽  
Vol 10 (8) ◽  
pp. 645
Author(s):  
Myung-Gyun Baek ◽  
Johng-Eon Shin ◽  
Dong-Hyun Hwang ◽  
Sung-Hoon Kim ◽  
Hong-Gyu Park ◽  
...  

Herein, we examined changes in the interfacial properties of organic light-emitting diodes when n-decyltrimethoxysilane (CH3SAM) was deposited on the surface of an indium tin oxide (ITO) electrode for various deposition times. It was revealed that the interfacial properties varied with deposition time. As the latter increased, so did the measured value of the contact angle, and ITO substrate exhibited a lower wettability. The contact angle measurements for bare ITO at 1, 10, 30, and 90 min were 57.41°, 63.43°, 73.76°, 81.47°, respectively, and the highest value obtained was 93.34°. In addition, the average roughness and work function of the ITO were measured using atomic force microscopy and X-ray photoelectron spectroscopy. As the deposition time of CH3SAM on the ITO substrates increased, it was evident that the former was well aligned with the latter, improving surface modification. The work function of CH3SAM, modified on the ITO substrates, improved by approximately 0.11 eV from 5.05–5.16 eV. The introduction of CH3SAM to the ITO revealed the ease of adjustment of the characteristics of ITO substrates.



2005 ◽  
Vol 44 (25) ◽  
pp. 9283-9287 ◽  
Author(s):  
Xiaoqing Zeng ◽  
Maofa Ge ◽  
Zheng Sun ◽  
Dianxun Wang


1991 ◽  
Vol 56 (10) ◽  
pp. 3445-3447 ◽  
Author(s):  
F. Chuburu ◽  
S. Lacombe ◽  
Genevieve Pfister-Guillouzo ◽  
A. Ben Cheik ◽  
J. Chuche ◽  
...  


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