In Situ TEM Observation of Fe-Included Carbon Nanofiber: Evolution of Structural and Electrical Properties in Field Emission Process

ACS Nano ◽  
2012 ◽  
Vol 6 (11) ◽  
pp. 9567-9573 ◽  
Author(s):  
Mohd Zamri Mohd Yusop ◽  
Pradip Ghosh ◽  
Yazid Yaakob ◽  
Golap Kalita ◽  
Masato Sasase ◽  
...  
Author(s):  
F. M. Ross ◽  
R. Hull ◽  
D. Bahnck ◽  
J. C. Bean ◽  
L. J. Peticolas ◽  
...  

We describe an investigation of the electrical properties of interfacial dislocations in strained layer heterostructures. We have been measuring both the structural and electrical characteristics of strained layer p-n junction diodes simultaneously in a transmission electron microscope, enabling us to correlate changes in the electrical characteristics of a device with the formation of dislocations.The presence of dislocations within an electronic device is known to degrade the device performance. This degradation is of increasing significance in the design and processing of novel strained layer devices which may require layer thicknesses above the critical thickness (hc), where it is energetically favourable for the layers to relax by the formation of misfit dislocations at the strained interfaces. In order to quantify how device performance is affected when relaxation occurs we have therefore been investigating the electrical properties of dislocations at the p-n junction in Si/GeSi diodes.


2007 ◽  
Vol 13 (S02) ◽  
Author(s):  
H Zhang ◽  
J Tang ◽  
Q Zhang ◽  
O Zhou ◽  
L-C Qin

2009 ◽  
Vol 194 (1) ◽  
pp. 93-103 ◽  
Author(s):  
A. Trenczek-Zajac ◽  
M. Radecka ◽  
K. Zakrzewska ◽  
A. Brudnik ◽  
E. Kusior ◽  
...  

2015 ◽  
Vol 1 ◽  
pp. 25-34 ◽  
Author(s):  
Zheng-Long Xu ◽  
Biao Zhang ◽  
Yang Gang ◽  
Ke Cao ◽  
Mohammad Akbari Garakani ◽  
...  

2013 ◽  
Vol 19 (S2) ◽  
pp. 1496-1497
Author(s):  
S.J. Kim ◽  
J.R. Jokisaari ◽  
A. Kargar ◽  
D. Wang ◽  
X. Pan

Extended abstract of a paper presented at Microscopy and Microanalysis 2013 in Indianapolis, Indiana, USA, August 4 – August 8, 2013.


Author(s):  
Florian Banhart ◽  
Alessandro La Torre ◽  
Ferdaous Ben Romdhane ◽  
Ovidiu Cretu ◽  
Andrés Botello-Mendez ◽  
...  

1997 ◽  
Vol 3 (S2) ◽  
pp. 401-402
Author(s):  
M. Yeadon ◽  
J.C. Yang ◽  
R.S. Averback ◽  
J.W. Bullard ◽  
D.L. Olynick ◽  
...  

The large surface area: volume ratios and fine grain size of nanophase materials give rise to novel and exciting structural and electrical properties that are of considerable scientific and technological interest. Using copper as a model system we have investigated the sintering of sputtered copper nanoparticles (4-20nm diameter) with a copper substrate in a novel UHV in-situ TEM.The nanoparticles were generated in a UHV chamber built into the side of the column by sputtering in 1.5Torr Ar. They were transported into the microscope in the gas phase and deposited on an electron transparent (001) copper foil mounted on a heated support. A typical bright-field (BF) image of the sample immediately after deposition at room temperature is shown in Fig. 1. The particles have assumed a random orientation on the substrate and remain stable for many hours at room temperature. The presence of both single particles and agglomerates of particles is evident in this image and examples are labelled ‘P’ and ‘A’, respectively


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