scholarly journals Effect of in situ annealing on the structural and electrical properties and infrared photodetection of III-Sb on GaAs using interfacial misfit array

2018 ◽  
Vol 427 ◽  
pp. 876-883 ◽  
Author(s):  
Bo Wen Jia ◽  
Kian Hua Tan ◽  
Wan Khai Loke ◽  
Satrio Wicaksono ◽  
Soon Fatt Yoon
Keyword(s):  
Electrical Properties ◽  
Structural And Electrical Properties ◽  
Infrared Photodetection

Structural and electrical properties of magnetron sputtered Ti(ON) thin films: The case of TiN doped in situ with oxygen

2009 ◽  
Vol 194 (1) ◽  
pp. 93-103 ◽  
Author(s):  
A. Trenczek-Zajac ◽  
M. Radecka ◽  
K. Zakrzewska ◽  
A. Brudnik ◽  
E. Kusior ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Structural And Electrical Properties

scholarly journals Optical, structural, and electrical properties of Mg2NiH4 thin films in situ grown by activated reactive evaporation

2006 ◽  
Vol 100 (6) ◽  
pp. 063518 ◽  
Author(s):  
R. J. Westerwaal ◽  
M. Slaman ◽  
C. P. Broedersz ◽  
D. M. Borsa ◽  
B. Dam ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Reactive Evaporation ◽  
Structural And Electrical Properties ◽  
Activated Reactive Evaporation

Ybco Films and Buffer‐Layers Grown In‐Situ by Pulsed Laser Deposition

1989 ◽  
Vol 169 ◽  
Author(s):  
G. A. N. Connell ◽  
D. B. Fenner ◽  
D. K. Fork ◽  
J.B. Boyce ◽  
F.A. Ponce ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Electrical Properties ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Buffer Layers ◽  
Laser Deposition ◽  
Ybco Films ◽  
Structural And Electrical Properties

AbstractYSZ [ (Y2O3)x (ZrO2)1‐x ] buffer‐layers for various compositions, x, and YBCO (Y1Ba2Cu3O7‐δ) films were grown on hydrogen‐terminated Si(100) substrates by laser ablation. The structural and electrical properties of the YBCO are found to depend strongly on x, and to be optimized near x=0.1.

In Situ TEM Observation of Fe-Included Carbon Nanofiber: Evolution of Structural and Electrical Properties in Field Emission Process

ACS Nano ◽  
2012 ◽  
Vol 6 (11) ◽  
pp. 9567-9573 ◽  
Author(s):  
Mohd Zamri Mohd Yusop ◽  
Pradip Ghosh ◽  
Yazid Yaakob ◽  
Golap Kalita ◽  
Masato Sasase ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Field Emission ◽  
Carbon Nanofiber ◽  
In Situ Tem ◽  
Emission Process ◽  
Structural And Electrical Properties

Structural and electrical properties of fully strained (In,Ga)As field effect transistors with in situ deposited gate stacks

2010 ◽  
Vol 96 (21) ◽  
pp. 212901 ◽  
Author(s):  
C. Marchiori ◽  
E. Kiewra ◽  
J. Fompeyrine ◽  
C. Gerl ◽  
C. Rossel ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Gate Stacks ◽  
Structural And Electrical Properties

In situ TEM measurements of the electrical properties of interface dislocations

1992 ◽  
Vol 50 (2) ◽  
pp. 1338-1339
Author(s):  
F. M. Ross ◽  
R. Hull ◽  
D. Bahnck ◽  
J. C. Bean ◽  
L. J. Peticolas ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Electronic Device ◽  
In Situ Tem ◽  
Device Performance ◽  
Misfit Dislocations ◽  
Electrical Characteristics ◽  
Strained Layer ◽  
Transmission Electron ◽  
Interfacial Dislocations

We describe an investigation of the electrical properties of interfacial dislocations in strained layer heterostructures. We have been measuring both the structural and electrical characteristics of strained layer p-n junction diodes simultaneously in a transmission electron microscope, enabling us to correlate changes in the electrical characteristics of a device with the formation of dislocations.The presence of dislocations within an electronic device is known to degrade the device performance. This degradation is of increasing significance in the design and processing of novel strained layer devices which may require layer thicknesses above the critical thickness (hc), where it is energetically favourable for the layers to relax by the formation of misfit dislocations at the strained interfaces. In order to quantify how device performance is affected when relaxation occurs we have therefore been investigating the electrical properties of dislocations at the p-n junction in Si/GeSi diodes.

Structural and Electrical Properties of Thermally Evaporated SnxSe1-x Thin Films

2011 ◽  
Vol 3 (10) ◽  
pp. 1-4 ◽  
Author(s):  
Bushra A Hasan ◽  
◽  
Ghuson H Mohamed ◽  
Amer A Ramadhan
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Structural And Electrical Properties

Fabrication and study the effect of the laser on the properties of the compound Tl2-xHgxBa2-ySryCa2Cu3O10+δ superconductor

2018 ◽  
pp. 168
Author(s):  
A. Kareem Dahash Ali ◽  
Nihad Ali Shafeek
Keyword(s):  
Transition Temperature ◽  
Solid State ◽  
Hydrostatic Pressure ◽  
Electrical Properties ◽  
Co2 Laser ◽  
Temperature Shift ◽  
Unit Cell ◽  
X Ray Diffraction ◽  
X Ray ◽  
Structural And Electrical Properties

This study included the fabrication of    compound (Tl2-xHgxBa2-ySryCa2Cu3O10+δ) in a manner solid state and under hydrostatic pressure ( 8 ton/cm2) and temperature annealing(850°C), and determine the effect of the laser on the structural and electrical properties elements in the compound, and various concentrations of x where (x= 0.1,0.2,0.3 ). Observed by testing the XRD The best ratio of compensation for x is 0.2 as the value of a = b = 5.3899 (A °), c = 36.21 (A °) show that the installation of four-wheel-based type and that the best temperature shift is TC= 142 K  .When you shine a CO2 laser on the models in order to recognize the effect of the laser on these models showed the study of X-ray diffraction of these samples when preparing models with different concentrations of the values ​​of x, the best ratio of compensation is 0.2 which showed an increase in the values ​​of the dimensions of the unit cell a=b = 5.3929 (A °), c = 36.238 (A°). And the best transition temperature after shedding laser is TC=144 K. 

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