scholarly journals Erratum: Corrigendum: Wafer-scale two-dimensional semiconductors from printed oxide skin of liquid metals

2017 ◽  
Vol 8 (1) ◽  
Author(s):  
Benjamin J. Carey ◽  
Jian Zhen Ou ◽  
Rhiannon M. Clark ◽  
Kyle J. Berean ◽  
Ali Zavabeti ◽  
...  
2017 ◽  
Vol 8 (1) ◽  
Author(s):  
Benjamin J. Carey ◽  
Jian Zhen Ou ◽  
Rhiannon M. Clark ◽  
Kyle J. Berean ◽  
Ali Zavabeti ◽  
...  

Abstract A variety of deposition methods for two-dimensional crystals have been demonstrated; however, their wafer-scale deposition remains a challenge. Here we introduce a technique for depositing and patterning of wafer-scale two-dimensional metal chalcogenide compounds by transforming the native interfacial metal oxide layer of low melting point metal precursors (group III and IV) in liquid form. In an oxygen-containing atmosphere, these metals establish an atomically thin oxide layer in a self-limiting reaction. The layer increases the wettability of the liquid metal placed on oxygen-terminated substrates, leaving the thin oxide layer behind. In the case of liquid gallium, the oxide skin attaches exclusively to a substrate and is then sulfurized via a relatively low temperature process. By controlling the surface chemistry of the substrate, we produce large area two-dimensional semiconducting GaS of unit cell thickness (∼1.5 nm). The presented deposition and patterning method offers great commercial potential for wafer-scale processes.


2018 ◽  
Vol 10 (4) ◽  
pp. 4010-4017 ◽  
Author(s):  
Zhengdong Liu ◽  
Mengya Song ◽  
Shang Ju ◽  
Xiao Huang ◽  
Xiangjing Wang ◽  
...  

2017 ◽  
Vol 5 (19) ◽  
pp. 9060-9066 ◽  
Author(s):  
Fei Wang ◽  
Yanhao Yu ◽  
Xin Yin ◽  
Peng Tian ◽  
Xudong Wang

Large area synthesis of two dimensional (2D) nanomaterials with a non-layered crystal structure remains a grand challenge.


Nanoscale ◽  
2018 ◽  
Vol 10 (37) ◽  
pp. 17712-17721 ◽  
Author(s):  
Jung Joon Pyeon ◽  
In-Hwan Baek ◽  
Weon Cheol Lim ◽  
Keun Hwa Chae ◽  
Seong Ho Han ◽  
...  

Two-dimensional continuous SnS2 is synthesized over a wafer at low-temperature (≤350 °C) by sulfurization combined with atomic layer deposition.


2019 ◽  
Vol 7 (47) ◽  
pp. 14999-15006 ◽  
Author(s):  
Menglei Gao ◽  
Junhua Meng ◽  
Yanan Chen ◽  
Siyuan Ye ◽  
Ye Wang ◽  
...  

Catalyst-free growth of wafer-scale h-BN few-layers is realized on sapphire substrates by the combination of surface nitridation and N+ sputtering.


2020 ◽  
Vol 12 (22) ◽  
pp. 25200-25210 ◽  
Author(s):  
Changhyeon Yoo ◽  
Md Golam Kaium ◽  
Luis Hurtado ◽  
Hao Li ◽  
Sushant Rassay ◽  
...  

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