scholarly journals Efficient light emission from inorganic and organic semiconductor hybrid structures by energy-level tuning

2015 ◽  
Vol 6 (1) ◽  
Author(s):  
R. Schlesinger ◽  
F. Bianchi ◽  
S. Blumstengel ◽  
C. Christodoulou ◽  
R. Ovsyannikov ◽  
...  
2016 ◽  
Author(s):  
R. Schlesinger ◽  
F. Bianchi ◽  
S. Blumstengel ◽  
Björn Kobin ◽  
K. Moudgil ◽  
...  

2006 ◽  
Vol 8 (11) ◽  
pp. 1057-1065 ◽  
Author(s):  
C. Teichert ◽  
C. Hofer ◽  
G. Hlawacek

2012 ◽  
Vol 4 (8) ◽  
pp. 675-679 ◽  
Author(s):  
Emanuele Orgiu ◽  
Núria Crivillers ◽  
Martin Herder ◽  
Lutz Grubert ◽  
Michael Pätzel ◽  
...  

2000 ◽  
Vol 660 ◽  
Author(s):  
Li Yan ◽  
C.W. Tang ◽  
M. G. Mason ◽  
Yongli Gao

ABSTRACTTris(8-hydroxyquinoline) aluminum (Alq3) based organic light emission diodes (OLED) have been a focus of material research in recent years. One of the key issues in searching for a better device performance and fabricating conditions is suitable electron-injection materials. We have investigated the energy alignment and the interface formation between different metals and Alq3 using X-ray and ultraviolet photoelectron spectroscopy (XPS and UPS). The interface is formed by depositing the target cathode material, such as Ca, Al or Al/LiF, onto an Alq3 film in a stepwise fashion in an ultrahigh vacuum environment. While the UPS results show the work function and vacuum level changes during interfaces formation, implying a possible surface dipole layer, XPS results show a more detailed and complex behavior. When a low work function metal such as Ca is deposited onto an Alq3 surface, a gap state is observed in UPS. At the same time, a new peak can be observed in the N 1s core level at a lower binding energy. These results can be characterized as charge transfer from the low work function metal to Alq3. The shifting of core levels are also observed, which may be explained by doping from metal atoms or charge diffusion. These interfaces are drastically different than the Al/Alq3 interface, which has very poor electron injection. At the Al/Alq3 interface there is a destructive chemical reaction and much smaller core level shifts are observed. Based on detailed analysis, energy level diagrams at the interface are proposed.


2021 ◽  
Author(s):  
Yuze Zhang ◽  
Alina Chen ◽  
Min-Woo Kim ◽  
Aida Alaei ◽  
Stephanie S. Lee

This tutorial review highlights the role of nanoconfinement in selecting for orientations and polymorphs of organic semiconductor crystals that are optimized for optoelectronic processes, including charge transport and light emission.


2020 ◽  
Vol 34 (06) ◽  
pp. 2050036
Author(s):  
Xin Tan ◽  
Zhixin Liu ◽  
Xuejie Liu ◽  
Yuan Ren ◽  
Shiyang Sun ◽  
...  

A complete theory is the guide and explanation of the experiment. According to the first principle, the stable structure of Ge vacancy color center (GeV) is the double vacancy center structure by using the constructed GeV color center supercell. The covalent radius and bond angle of GeV are explored by analyzing the microstructures. The electronic structure of GeV color center is calculated, and the charge transfers of GeV color center are explained, thereby demonstrating the existence of stable bonds. The principle of the energy-level transition of the GeV color center in terms of light emission is described. The effect of each element and energy level orbital is illustrated by the density-of-states diagram.


2020 ◽  
pp. 2010174
Author(s):  
Thorsten Schultz ◽  
Dominique Lungwitz ◽  
Elena Longhi ◽  
Stephen Barlow ◽  
Seth R. Marder ◽  
...  

2010 ◽  
Vol 428-429 ◽  
pp. 475-478 ◽  
Author(s):  
Bao Gai Zhai ◽  
Yuan Ming Huang

The optical properties and electronic structures of an organic semiconductor sexithiophene have been investigated with ultraviolet-visible spectroscopy, cw photospectroscopy and time-resolved photospectroscopy, respectively. Sexithiophene in dilute tetrahydrofuran solutions can absorb photons at 400 nm while it can give off strong green photoluminescence at 550 nm under the excitation of 325 nm ultraviolet light. With the assistance of calculated electronic structures and pump-and-probe characterization, our results indicate that both the optical absorption and the light emission of the sexithiophene are controlled by the p-conjugation of the oligothiophene.


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