scholarly journals Excess charge-carrier induced instability of hybrid perovskites

2018 ◽  
Vol 9 (1) ◽  
Author(s):  
Yuze Lin ◽  
Bo Chen ◽  
Yanjun Fang ◽  
Jingjing Zhao ◽  
Chunxiong Bao ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Excess Charge ◽  
Excess Charge Carrier

Sensitization and Charge Carrier Kinetics in ZnO Powders

1988 ◽  
Vol 43 (3) ◽  
pp. 189-192 ◽  
Author(s):  
Karl-Michael Schindler ◽  
Marinus Kunst
Keyword(s):  
Charge Carrier ◽  
Time Range ◽  
Excess Charge ◽  
Carrier Injection ◽  
Charge Carrier Dynamics ◽  
Transient Photoconductivity ◽  
Photoconductivity Decay ◽  
Zno Powders ◽  
Zno Powder ◽  
Excess Charge Carrier

Abstract The influence of the excess charge carrier injection mechanism on the excess charge carrier dynamics in ZnO powder is investigated by contactless transient photoconductivity measurements. Excess charge carriers were produced by above bandgap light, subbandgap light and by injection from an adsorbed dye (Rhodamine B) after excitation of this dye. In all these cases the transient photoconductivity decay extends over a large time range but only after band-to-band excitation an appreciable decay is observed in the microsecond time range. The experimental results are discussed in particular with respect to photocatalysis.

Influence of Defects on Excess Charge Carrier Kinetics Studied by Transient PC and Transient PA

1997 ◽  
Vol 467 ◽  
Author(s):  
H. Feist ◽  
M. Kunst ◽  
C. Swiatkowski
Keyword(s):  
Charge Carrier ◽  
Defect Density ◽  
State Of The Art ◽  
Electron Trapping ◽  
Excess Charge ◽  
Band Tail ◽  
Effective Electron ◽  
Transient Photoconductivity ◽  
Different Temperatures ◽  
Excess Charge Carrier

ABSTRACTBy comparison of transient photoconductivity (TPC) and transient photoinduced absorption (PA) the influence of the density of states in the bandgap on excess charge carrier kinetics is studied for a-Si:H films deposited at different temperatures and for state of the art a-Si:H films in two different states of light soaking. In both series the rising deep defect density leads to an enhancement of electron trapping rather than recombination via deep defects. The samples deposited at temperatures lower than 250°C additionally show a lower effective electron mobility, i.e. a broader conduction band tail.

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