Influence of Defects on Excess Charge Carrier Kinetics Studied by Transient PC and Transient PA

1997 ◽  
Vol 467 ◽  
Author(s):  
H. Feist ◽  
M. Kunst ◽  
C. Swiatkowski
Keyword(s):  
Charge Carrier ◽  
Defect Density ◽  
State Of The Art ◽  
Electron Trapping ◽  
Excess Charge ◽  
Band Tail ◽  
Effective Electron ◽  
Transient Photoconductivity ◽  
Different Temperatures ◽  
Excess Charge Carrier

ABSTRACTBy comparison of transient photoconductivity (TPC) and transient photoinduced absorption (PA) the influence of the density of states in the bandgap on excess charge carrier kinetics is studied for a-Si:H films deposited at different temperatures and for state of the art a-Si:H films in two different states of light soaking. In both series the rising deep defect density leads to an enhancement of electron trapping rather than recombination via deep defects. The samples deposited at temperatures lower than 250°C additionally show a lower effective electron mobility, i.e. a broader conduction band tail.

Sensitization and Charge Carrier Kinetics in ZnO Powders

1988 ◽  
Vol 43 (3) ◽  
pp. 189-192 ◽  
Author(s):  
Karl-Michael Schindler ◽  
Marinus Kunst
Keyword(s):  
Charge Carrier ◽  
Time Range ◽  
Excess Charge ◽  
Carrier Injection ◽  
Charge Carrier Dynamics ◽  
Transient Photoconductivity ◽  
Photoconductivity Decay ◽  
Zno Powders ◽  
Zno Powder ◽  
Excess Charge Carrier

Abstract The influence of the excess charge carrier injection mechanism on the excess charge carrier dynamics in ZnO powder is investigated by contactless transient photoconductivity measurements. Excess charge carriers were produced by above bandgap light, subbandgap light and by injection from an adsorbed dye (Rhodamine B) after excitation of this dye. In all these cases the transient photoconductivity decay extends over a large time range but only after band-to-band excitation an appreciable decay is observed in the microsecond time range. The experimental results are discussed in particular with respect to photocatalysis.

scholarly journals Excess charge-carrier induced instability of hybrid perovskites

2018 ◽  
Vol 9 (1) ◽  
Author(s):  
Yuze Lin ◽  
Bo Chen ◽  
Yanjun Fang ◽  
Jingjing Zhao ◽  
Chunxiong Bao ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Excess Charge ◽  
Excess Charge Carrier

Excess Charge Carrier Kinetics in Amorphous Silicon/Crystalline Silicon Heterojunctions

1998 ◽  
Vol 507 ◽  
Author(s):  
S. v. Aichberger ◽  
O. Hahneiser ◽  
J. Löffler ◽  
H. Feist ◽  
M. Kunst
Keyword(s):  
Low Temperature ◽  
High Efficiency ◽  
Crystalline Silicon ◽  
Excess Charge ◽  
Electron Hole ◽  
Transient Photoconductivity ◽  
Excess Electrons ◽  
Standard Quality ◽  
Silicon Heterojunctions ◽  
Excess Charge Carrier

ABSTRACTBy contactless transient photoconductivity measurements it is shown that i a-Si:H films, both of standard quality films and annealed low temperature films, passivate the c-Si surface for electron-hole pairs generated in the c-Si substrate. Films deposited at low temperature without annealing do not lead to passivation of the c-Si surface. The injection of excess electrons from a standard a-Si:H film into c-Si with a time constant of a few microseconds and a rather high efficiency was observed. For an annealed 120°C a-Si:H film a slower and less efficient injection was measured, whereas an annealed 50°C a-Si:H shows no appreciable injection.

Charge carrier transport in a-Si:H/c-Si heterojunctions

2001 ◽  
Vol 664 ◽  
Author(s):  
Susanne von Aichberger ◽  
Frank Wünsch ◽  
Marinus Kunst
Keyword(s):  
Thin Films ◽  
Charge Carrier ◽  
Space Charge ◽  
Space Charge Region ◽  
Carrier Transport ◽  
Charge Carriers ◽  
Charge Carrier Transport ◽  
Excess Charge ◽  
Si Substrate ◽  
Transient Photoconductivity

ABSTRACTContactless transient photoconductivity measurements of a-Si:H / c-Si heterojunctions are presented. It is shown that n a-Si:H / n c-Si junctions furnish an excellent passivation of the n c-Si surface. For i a-Si:H / n c-Si junctions the passivation is better for thicker films, whereas for very thin films (10 nm or less) a deviating behaviour probably due to inhomogeneities is observed. For the p a-Si:H / n c-Si junction separation of excess charge carriers in the space charge region is observed leading to a slowly decaying tail of the signal. This separation is also observed in thick i a-Si:H / n c-Si samples where electrons are injected from the a-Si:H film in the c-Si substrate.

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