Nanodevices engineering and spin transport properties of MnBi2Te4 monolayer

AbstractTwo-dimensional (2D) magnetic materials are essential for the development of the next-generation spintronic technologies. Recently, layered van der Waals (vdW) compound MnBi2Te4 (MBT) has attracted great interest, and its 2D structure has been reported to host coexisting magnetism and topology. Here, we design several conceptual nanodevices based on MBT monolayer (MBT-ML) and reveal their spin-dependent transport properties by means of the first-principles calculations. The pn-junction diodes and sub-3-nm pin-junction field-effect transistors (FETs) show a strong rectifying effect and a spin filtering effect, with an ideality factor n close to 1 even at a reasonably high temperature. In addition, the pip- and nin-junction FETs give an interesting negative differential resistive (NDR) effect. The gate voltages can tune currents through these FETs in a large range. Furthermore, the MBT-ML has a strong response to light. Our results uncover the multifunctional nature of MBT-ML, pave the road for its applications in diverse next-generation semiconductor spin electric devices.

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EFFECTS OF THE MIXED Cu/O LAYER ON THE TRANSPORT PROPERTIES OF Cu/EuO-BASED TUNNEL JUNCTIONS

Surface Review and Letters ◽

10.1142/s0218625x17501207 ◽

2017 ◽

Vol 24 (08) ◽

pp. 1750120 ◽

Cited By ~ 1

Author(s):

C. J. DAI ◽

X. H. YAN ◽

Y. XIAO ◽

J. R. YUAN ◽

M. X. BI ◽

...

Keyword(s):

Transport Properties ◽

Tunnel Junctions ◽

Spintronic Devices ◽

Valance Band Maximum ◽

Spin Dependent Transport ◽

Filtering Effect ◽

Dependent Transport ◽

Non Equilibrium Green’S Function ◽

The Eu ◽

Majority Spin

The spin-dependent transport properties of Cu/EuO-based tunnel junctions are investigated by means of the first-principle calculations combined with the non-equilibrium Green’s function (NEGF) method. It is found that the Cu/EuO-based junctions exhibit excellent spin-filtering effect. Furthermore, the mixed Cu/O layer enhances the tunneling of the majority spin through the EuO barrier for the junctions with Cu/O layers due to the fact that the valance-band maximum of the Eu-4[Formula: see text] states shifts to high energies with respect to the Fermi level for these junctions. These results permit the existence of the mixed Cu/O layer in Cu/EuO-based tunnel junctions and promote future applications of these tunnel junctions in spintronic devices.

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Theoretical Design of thermal spin molecular logic gates by using a combinational molecular junction

Chinese Physics B ◽

10.1088/1674-1056/ac3a5f ◽

2021 ◽

Author(s):

Yi Guo ◽

Peng Zhao ◽

Gang Chen

Keyword(s):

Transport Properties ◽

Density Functional ◽

Logic Gates ◽

Molecular Junction ◽

Single Walled Carbon Nanotube ◽

Molecular Logic Gates ◽

Spin Dependent Transport ◽

Thermally Driven ◽

Filtering Effect ◽

Dependent Transport

Abstract Based on the density functional theory combined with the non-equilibrium Green’s function methodology, we have studied the thermally-driven spin-dependent transport properties of a combinational molecular junction consisting of a planar four-coordinate Fe molecule and a 15,16-dinitrile dihydropyrene/cyclophanediene molecule with single-walled carbon nanotube bridge and electrode. Our results show that the magnetic field and light can effectively regulate the thermally-driven spin-dependent currents. Perfect thermal spin-filtering effect and good thermal switching effect are realized. The results are explained by the Fermi-Dirac distribution function, the spin-resolved transmission spectra, the spatial distribution of molecular projected self-consistent Hamiltonian orbitals, and the spin-resolved current spectra. On the basis of these thermally-driven spin-dependent transport properties, we further design three basic thermal spin molecular AND, OR and NOT gates.

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Strain Investigation on Spin-Dependent Transport Properties of γ-Graphyne Nanoribbon Between Gold Electrodes

Nanoscale Research Letters ◽

10.1186/s11671-020-03461-3 ◽

2021 ◽

Vol 16 (1) ◽

Author(s):

Yun Li ◽

Xiaobo Li ◽

Shidong Zhang ◽

Liemao Cao ◽

Fangping Ouyang ◽

...

Keyword(s):

Transport Properties ◽

High Performance ◽

Density Functional ◽

Strain Engineering ◽

Molecular Junctions ◽

Spin Splitting ◽

Functional Theory ◽

Spin Dependent Transport ◽

The Density Functional Theory ◽

Dependent Transport

AbstractStrain engineering has become one of the effective methods to tune the electronic structures of materials, which can be introduced into the molecular junction to induce some unique physical effects. The various γ-graphyne nanoribbons (γ-GYNRs) embedded between gold (Au) electrodes with strain controlling have been designed, involving the calculation of the spin-dependent transport properties by employing the density functional theory. Our calculated results exhibit that the presence of strain has a great effect on transport properties of molecular junctions, which can obviously enhance the coupling between the γ-GYNR and Au electrodes. We find that the current flowing through the strained nanojunction is larger than that of the unstrained one. What is more, the length and strained shape of the γ-GYNR serves as the important factors which affect the transport properties of molecular junctions. Simultaneously, the phenomenon of spin-splitting occurs after introducing strain into nanojunction, implying that strain engineering may be a new means to regulate the electron spin. Our work can provide theoretical basis for designing of high performance graphyne-based devices in the future.

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Oxygen manipulation at the Co/SiO2 interface and its effect on spin-dependent transport properties

Applied Physics A ◽

10.1007/s00339-020-03680-6 ◽

2020 ◽

Vol 126 (7) ◽

Author(s):

Qian Liu ◽

Yaqiang Tian ◽

Xiaoping Zheng ◽

Liansheng Chen ◽

Yuqing Zhao ◽

...

Keyword(s):

Transport Properties ◽

Spin Dependent Transport ◽

Dependent Transport

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Tunneling magnetoresistance and light modulation in Fe4N(La2/3Sr1/3MnO3)/C60/Fe4N single molecule magnetic tunnel junctions

Journal of Materials Chemistry C ◽

10.1039/c9tc06379j ◽

2020 ◽

Vol 8 (9) ◽

pp. 3137-3146 ◽

Cited By ~ 2

Author(s):

Xuefei Han ◽

Wenbo Mi ◽

Dunhui Wang

Keyword(s):

Transport Properties ◽

Single Molecule ◽

Tunnel Junctions ◽

Magnetic Tunnel Junctions ◽

Tunneling Magnetoresistance ◽

Light Modulation ◽

Spin Dependent Transport ◽

Dependent Transport

Spin-dependent transport properties and light modulation of Fe4N/C60/Fe4N and LSMO/C60/Fe4N single molecule magnetic tunnel junctions.

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Effect of MgO Barrier Insertion on Spin-Dependent Transport Properties of CoFe/n-GaAs Heterojunctions

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.02bm01 ◽

2012 ◽

Vol 51 (2) ◽

pp. 02BM01 ◽

Cited By ~ 7

Author(s):

Takafumi Akiho ◽

Tetsuya Uemura ◽

Masanobu Harada ◽

Ken-ichi Matsuda ◽

Masafumi Yamamoto

Keyword(s):

Transport Properties ◽

Spin Dependent Transport ◽

Dependent Transport

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Symmetry-Dependent Spin Transport Properties and Spin-Filter Effects in Zigzag-Edged Germanene Nanoribbons

Journal of Nanomaterials ◽

10.1155/2015/810659 ◽

2015 ◽

Vol 2015 ◽

pp. 1-10 ◽

Cited By ~ 3

Author(s):

Can Cao ◽

Mengqiu Long ◽

Xiancheng Mao

Keyword(s):

Transport Properties ◽

First Principles ◽

Mirror Plane ◽

First Principles Calculations ◽

Spin Filter ◽

Linear Current ◽

Current Voltage ◽

Resistance State ◽

Parallel Configuration ◽

Dependent Transport

We performed the first-principles calculations to investigate the spin-dependent electronic transport properties of zigzag-edged germanium nanoribbons (ZGeNRs). We choose of ZGeNRs with odd and even widths of 5 and 6, and the symmetry-dependent transport properties have been found, although theσmirror plane is absent in ZGeNRs. Furthermore, even-Nand odd-NZGeNRs have very different current-voltage relationships. We find that the even 6-ZGeNR shows a dual spin-filter effect in antiparallel (AP) magnetism configuration, but the odd 5-ZGeNR behaves as conventional conductors with linear current-voltage dependence. It is found that when the two electrodes are in parallel configuration, the 6-ZGeNR system is in a low resistance state, while it can switch to a much higher resistance state when the electrodes are in AP configuration, and the magnetoresistance of 270% can be observed.

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