scholarly journals Temporal characterization of femtosecond laser pulses using tunneling ionization in the UV, visible, and mid-IR ranges

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Wosik Cho ◽  
Sung In Hwang ◽  
Chang Hee Nam ◽  
Mina R. Bionta ◽  
Philippe Lassonde ◽  
...  

Abstract To generalize the applicability of the temporal characterization technique called “tunneling ionization with a perturbation for the time-domain observation of an electric field” (TIPTOE), the technique is examined in the multicycle regime over a broad wavelength range, from the UV to the IR range. The technique is rigorously analyzed first by solving the time-dependent Schrödinger equation. Then, experimental verification is demonstrated over an almost 5-octave wavelength range at 266, 1800, 4000 and 8000 nm by utilizing the same nonlinear medium – air. The experimentally obtained dispersion values of the materials used for the dispersion control show very good agreement with the ones calculated using the material dispersion data and the pulse duration results obtained for 1800 and 4000 nm agree well with the frequency-resolved optical gating measurements. The universality of TIPTOE arises from its phase-matching-free nature and its unprecedented broadband operation range.

Author(s):  
A.A. Ilyin ◽  
◽  
K.A. Shmirko ◽  
S.S. Golik ◽  
D.Yu. Proschenko ◽  
...  

A numerical model describing the dynamics of plasma particle density upon filamentation of femtosecond radiation in the air is presented. The simulation results are in good agreement with the experimental data. The pumping processes of the N2 and N2+ radiative levels are investigated. The model predicts a sharp drop in electron temperature and density within 1 ns. For the first positive nitrogen system, an excess of the population of the upper radiation level over the population of the lower one is observed for 550 ps.


1999 ◽  
Vol 74 (5) ◽  
pp. 771-772 ◽  
Author(s):  
Giannis Zacharakis ◽  
Aggeliki Zolindaki ◽  
Vangelis Sakkalis ◽  
George Filippidis ◽  
Eugenios Koumantakis ◽  
...  

2011 ◽  
Vol 287-290 ◽  
pp. 364-368 ◽  
Author(s):  
Yuan Li ◽  
Guo Jin Feng ◽  
Li Zhao

The surface microstructured silicon prepared by femtosecond laser pulses irradiation in SF6shows significantly enhanced light absorption over a wide wavelength range. Absorptance of microstructured silicon is measured from 2 to 16μm, and the absorptance can up to 0.8 in the measured wavelength range. The absorptance of microstructured silicon increases as the height of spikes increases. Emissivity of microstructured silicon at different temperatures(100°C-400°C) is measured from 2.5μm to 25μm. Greatly enhanced emissivity compared to that of flat silicon was observed. At a certain temperature, with increasing the height of the spikes, the emissivity increases. For a sample with 13–14μm high spikes, the emissivity at a temperature of 100°C is approximately 0.96. A tentative explanation for the high absorptance of microstructured silicon has been carried out from three aspects: impurity states, structure defects and multiple reflection of light between spikes. The excellent properties of microstructured silicon make it a promising candidate for applications of infrared detectors, silicon solar cells, flat blackbody source and so on.


2012 ◽  
Vol 285 (24) ◽  
pp. 5157-5162 ◽  
Author(s):  
Julia Fiebrandt ◽  
Eric Lindner ◽  
Sven Brückner ◽  
Martin Becker ◽  
Anka Schwuchow ◽  
...  

2013 ◽  
Vol 21 (21) ◽  
pp. 24879 ◽  
Author(s):  
Vincent Loriot ◽  
Gregory Gitzinger ◽  
Nicolas Forget

2002 ◽  
Vol 213 (4-6) ◽  
pp. 193-200 ◽  
Author(s):  
Kyung-Han Hong ◽  
Jae Hee Sung ◽  
Yong Soo Lee ◽  
Chang Hee Nam

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