Investigation of random telegraph signal in two junction layouts of proton irradiated CMOS SPADs

AbstractThis paper focuses on the understanding of the Random Telegraph Signal (RTS) in Single-Photon Avalanche Diodes (SPAD). We studied the RTS of two different SPAD layouts, designed and implemented in a 150-nm CMOS process, after proton irradiation. The two structures are characterized by different junction types: the first structure is constituted by a P+/Nwell junction, while the second is formed by a Pwell/Niso junction. RTS occurrence has been measured in about one thousand SPAD pixels and the differences addressed in two layouts are motivated and discussed. Hypotheses on the RTS origin are drawn by analyzing the RTS time constants and the RTS occurrence evolution as a function of the annealing temperature.

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Photon-Detection-Probability Simulation Method for CMOS Single-Photon Avalanche Diodes

Sensors ◽

10.3390/s20020436 ◽

2020 ◽

Vol 20 (2) ◽

pp. 436 ◽

Cited By ~ 2

Author(s):

Chin-An Hsieh ◽

Chia-Ming Tsai ◽

Bing-Yue Tsui ◽

Bo-Jen Hsiao ◽

Sheng-Di Lin

Keyword(s):

Detection Probability ◽

Single Photon ◽

Cmos Technology ◽

Oxide Semiconductor ◽

Cmos Process ◽

Single Photons ◽

Photon Detection ◽

Important Indicator ◽

Avalanche Diodes ◽

Single Photon Avalanche Diodes

Single-photon avalanche diodes (SPADs) in complementary metal-oxide-semiconductor (CMOS) technology have excellent timing resolution and are capable to detect single photons. The most important indicator for its sensitivity, photon-detection probability (PDP), defines the probability of a successful detection for a single incident photon. To optimize PDP is a cost- and time-consuming task due to the complicated and expensive CMOS process. In this work, we have developed a simulation procedure to predict the PDP without any fitting parameter. With the given process parameters, our method combines the process, the electrical, and the optical simulations in commercially available software and the calculation of breakdown trigger probability. The simulation results have been compared with the experimental data conducted in an 800-nm CMOS technology and obtained a good consistence at the wavelength longer than 600 nm. The possible reasons for the disagreement at the short wavelength have been discussed. Our work provides an effective way to optimize the PDP of a SPAD prior to its fabrication.

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PROTON IRRADIATION EFFECTS ON SINGLE-PHOTON AVALANCHE DIODES

RAD Association Journal ◽

10.21175/radj.2018.03.030 ◽

2019 ◽

Vol 3 (3) ◽

Author(s):

F. Di Capua ◽

M. Campajola ◽

D. Fiore ◽

C. Nappi ◽

E. Sarnelli ◽

...

Keyword(s):

Proton Irradiation ◽

Single Photon ◽

Irradiation Effects ◽

Avalanche Diodes ◽

Single Photon Avalanche Diodes

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Characterization of Single-Photon Avalanche Diodes in a 0.5- Standard CMOS Process—Part 2: Equivalent Circuit Model and Geiger Mode Readout

IEEE Sensors Journal ◽

10.1109/jsen.2016.2526665 ◽

2016 ◽

Vol 16 (9) ◽

pp. 3075-3083 ◽

Cited By ~ 10

Author(s):

Marc Dandin ◽

Mohammad Habib Ullah Habib ◽

Babak Nouri ◽

Pamela Abshire ◽

Nicole McFarlane

Keyword(s):

Equivalent Circuit ◽

Single Photon ◽

Equivalent Circuit Model ◽

Circuit Model ◽

Cmos Process ◽

Avalanche Diodes ◽

Standard Cmos Process ◽

Geiger Mode ◽

Single Photon Avalanche Diodes

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Crosstalk Between Single-Photon Avalanche Diodes in a 0.18-μm High-Voltage CMOS Process

Journal of Lightwave Technology ◽

10.1109/jlt.2017.2779490 ◽

2018 ◽

Vol 36 (3) ◽

pp. 833-837 ◽

Cited By ~ 4

Author(s):

Dai-Rong Wu ◽

Chia-Ming Tsai ◽

Yi-Hsiang Huang ◽

Sheng-Di Lin

Keyword(s):

High Voltage ◽

Single Photon ◽

Cmos Process ◽

Avalanche Diodes ◽

Single Photon Avalanche Diodes

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Performance and Spatial Sensitivity Variations of Single-Photon Avalanche Diodes Manufactured in an Image Sensor CMOS Process

IEEE Electron Device Letters ◽

10.1109/led.2015.2475168 ◽

2015 ◽

Vol 36 (11) ◽

pp. 1118-1120 ◽

Cited By ~ 5

Author(s):

Johan Borg

Keyword(s):

Single Photon ◽

Image Sensor ◽

Cmos Process ◽

Spatial Sensitivity ◽

Avalanche Diodes ◽

Single Photon Avalanche Diodes

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Random Telegraph Signal in n⁺/p-Well CMOS Single-Photon Avalanche Diodes

IEEE Transactions on Electron Devices ◽

10.1109/ted.2021.3070557 ◽

2021 ◽

pp. 1-6

Author(s):

Wei Jiang ◽

M. Jamal Deen

Keyword(s):

Single Photon ◽

Random Telegraph Signal ◽

Avalanche Diodes ◽

Single Photon Avalanche Diodes

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Proton Irradiation of Ultraviolet 4H-SiC Single Photon Avalanche Diodes

IEEE Transactions on Nuclear Science ◽

10.1109/tns.2011.2168980 ◽

2011 ◽

Vol 58 (6) ◽

pp. 3343-3347 ◽

Cited By ~ 9

Author(s):

Jun Hu ◽

Xiaobin Xin ◽

Jian H. Zhao ◽

Brenda L. VanMil ◽

Rachael Myers-Ward ◽

...

Keyword(s):

Proton Irradiation ◽

Single Photon ◽

Avalanche Diodes ◽

Single Photon Avalanche Diodes

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Simulation and Modeling of Single Photon Avalanche Diodes

International Journal of High Speed Electronics and Systems ◽

10.1142/s0129156415200062 ◽

2015 ◽

Vol 24 (03n04) ◽

pp. 1520006

Author(s):

Mohammad Habib Ullah Habib ◽

Farhan Quaiyum ◽

Khandaker A. Al Mamun ◽

Syed K. Islam ◽

Nicole McFarlane

Keyword(s):

Experimental Data ◽

Single Photon ◽

Optical Power ◽

Cmos Process ◽

Simulation And Modeling ◽

Spice Model ◽

Avalanche Diodes ◽

Model And Simulation ◽

Simulation Results ◽

Single Photon Avalanche Diodes

A comprehensive SPICE model is developed for single photon avalanche diodes (SPADs). The model simulates both the static and dynamic behaviors of SPADs. Parameters of the model were extracted form experimental data obtained from SPADs designed and fabricated in a standard 0.5μm CMOS process. In this model, the resistive behavior of the device was modeled with an exponential function. Moreover, the device simulated response to incident optical power stimulation is modeled. Experimentally extracted parameters were incorporated into the model, and simulation results agreed with the experimental data.

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