scholarly journals Nonresonant amplification of spin waves through interface magnetoelectric effect and spin-transfer torque

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Piotr Graczyk ◽  
Maciej Krawczyk

AbstractWe present a new mechanism for manipulation of the spin-wave amplitude through the use of the dynamic charge-mediated magnetoelectric effect in ultrathin multilayers composed of dielectric thin-film capacitors separated by a ferromagnetic bilayer. Propagating spin waves can be amplified and attenuated with rising and decreasing slopes of the oscillating voltage, respectively, locally applied to the sample. The way the spin accumulation is generated makes the interaction of the spin-transfer torque with the magnetization dynamics mode-selective and restricted to some range of spin-wave frequencies, which is contrary to known types of the spin-transfer torque effects. The interfacial nature of spin-dependent screening allows to reduce the thickness of the fixed magnetization layer to a few nanometers, thus the proposed effect significantly contributes toward realization of the magnonic devices and also miniaturization of the spintronic devices.

2021 ◽  
Vol 1 ◽  

Electric current causes a Doppler effect in spin waves in ferromagnets through a spin-transfer torque. We report that antiferromagnets allow two such spin-transfer torques and present a microscopic analysis that interpolates ferro- and antiferromagnetic transport regimes.


2014 ◽  
Vol 115 (17) ◽  
pp. 17D123 ◽  
Author(s):  
Tanmoy Pramanik ◽  
Urmimala Roy ◽  
Maxim Tsoi ◽  
Leonard F. Register ◽  
Sanjay K. Banerjee

2015 ◽  
Vol 17 (28) ◽  
pp. 18843-18853 ◽  
Author(s):  
G. C. Loh ◽  
Ravindra Pandey

The robust metallic mid-gap states in localized domains of fluorinated ReS2 monolayer could be useful in spintronic devices, such as spin-transfer torque and spin-wave logic devices.


2020 ◽  
Vol 91 (3) ◽  
pp. 30601
Author(s):  
Zhen-Wei Zhou ◽  
Xi-Guang Wang ◽  
Yao-Ghuang Nie ◽  
Qing-Lin Xia ◽  
Guang-Hua Guo

Efficient excitation of spin waves is a key issue in magnonics. Here, by using micromagnetic simulation and analytical analysis, we study the excitation of spin waves confined in a limited region by a microwave field with assistance of spin-transfer torque. The results show that the spin-transfer torque can decrease the effective damping constant and increase the spin wave relaxation time substantially. As a result, the amplitude of the excited spin waves is increased greatly. By periodically lifting and establishing the blocking areas, strong spin-wave pulses are released from the confined region. Such generated spin-wave pulses are much stronger than traditionally excited spin waves, especially for high-frequency spin waves. Our study provides a new method to generate strong high-frequency spin waves.


SPIN ◽  
2017 ◽  
Vol 07 (03) ◽  
pp. 1740014 ◽  
Author(s):  
Cormac Ó Coileáin ◽  
Han Chun Wu

From historical obscurity, antiferromagnets are recently enjoying revived interest, as antiferromagnetic (AFM) materials may allow the continued reduction in size of spintronic devices. They have the benefit of being insensitive to parasitic external magnetic fields, while displaying high read/write speeds, and thus poised to become an integral part of the next generation of logical devices and memory. They are currently employed to preserve the magnetoresistive qualities of some ferromagnetic based giant or tunnel magnetoresistance systems. However, the question remains how the magnetic states of an antiferromagnet can be efficiently manipulated and detected. Here, we reflect on AFM materials for their use in spintronics, in particular, newly recognized antiferromagnet Mn2Au with its in-plane anisotropy and tetragonal structure and high Néel temperature. These attributes make it one of the most promising candidates for AFM spintronics thus far with the possibility of architectures freed from the need for ferromagnetic (FM) elements. Here, we discuss its potential for use in ferromagnet-free spintronic devices.


2021 ◽  
Vol 118 (25) ◽  
pp. 252407
Author(s):  
Kyuhwe Kang ◽  
Won-Bin Lee ◽  
Dong-Kyu Lee ◽  
Kyung-Jin Lee ◽  
Gyung-Min Choi

2009 ◽  
Vol 79 (10) ◽  
Author(s):  
G. Siracusano ◽  
G. Finocchio ◽  
A. La Corte ◽  
G. Consolo ◽  
L. Torres ◽  
...  

Science ◽  
2019 ◽  
Vol 366 (6469) ◽  
pp. 1125-1128 ◽  
Author(s):  
Yi Wang ◽  
Dapeng Zhu ◽  
Yumeng Yang ◽  
Kyusup Lee ◽  
Rahul Mishra ◽  
...  

Widespread applications of magnetic devices require an efficient means to manipulate the local magnetization. One mechanism is the electrical spin-transfer torque associated with electron-mediated spin currents; however, this suffers from substantial energy dissipation caused by Joule heating. We experimentally demonstrated an alternative approach based on magnon currents and achieved magnon-torque–induced magnetization switching in Bi2Se3/antiferromagnetic insulator NiO/ferromagnet devices at room temperature. The magnon currents carry spin angular momentum efficiently without involving moving electrons through a 25-nanometer-thick NiO layer. The magnon torque is sufficient to control the magnetization, which is comparable with previously observed electrical spin torque ratios. This research, which is relevant to the energy-efficient control of spintronic devices, will invigorate magnon-based memory and logic devices.


Sign in / Sign up

Export Citation Format

Share Document