Progress in single source precursors for layered 2D metal chalcogenide thin films and nanomaterials

Nanoscience ◽  
2018 ◽  
pp. 86-120
Author(s):  
Malik Dilshad Khan ◽  
Neerish Revaprasadu
Keyword(s):  
Thin Films ◽  
Single Source ◽  
Metal Chalcogenide ◽  
Single Source Precursors ◽  
Chalcogenide Thin Films

Growth of lead chalcogenide thin films using single-source precursors

2004 ◽  
Vol 14 (8) ◽  
pp. 1310 ◽  
Author(s):  
Mohammad Afzaal ◽  
Katie Ellwood ◽  
Nigel L. Pickett ◽  
Paul O'Brien ◽  
Jim Raftery ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Source ◽  
Lead Chalcogenide ◽  
Single Source Precursors ◽  
Chalcogenide Thin Films

The effect of complexing agents in chemical solution deposition of metal chalcogenide thin films

2021 ◽  
Author(s):  
Sucheta Sengupta ◽  
Rinki Aggarwal ◽  
Yuval Golan
Keyword(s):  
Thin Films ◽  
Chemical Solution Deposition ◽  
Metal Ion ◽  
Chemical Deposition ◽  
Review Article ◽  
Complexing Agents ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Metal Chalcogenide ◽  
Chalcogenide Thin Films

This review article gives an overview of different complexing agents used during chemical deposition of metal chalcogenide thin films and their role in controlling the resultant morphology by effective complexation of the metal ion.

Chemical vapour deposition of II–VI semiconductor thin films using M[(TePiPr2)2N]2(M = Cd, Hg) as single-source precursors

2006 ◽  
Vol 16 (10) ◽  
pp. 966-969 ◽  
Author(s):  
Shivram S. Garje ◽  
Jamie S. Ritch ◽  
Dana J. Eisler ◽  
Mohammad Afzaal ◽  
Paul O'Brien ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Single Source ◽  
Single Source Precursors ◽  
Semiconductor Thin Films

Group III Metal Sulfide Thin Films From Single-Source Precursors by Chemical Vapor Deposition (CVD) Techniques

1999 ◽  
Vol 606 ◽  
Author(s):  
Mike R. Lazell ◽  
Paul O'brien ◽  
David J. Otway ◽  
Jin-Ho Park
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Metal Sulfide ◽  
Chemical Vapor ◽  
Single Source ◽  
Group 13 ◽  
Single Source Precursors ◽  
Group Iii

AbstractSeveral single-source precursors including In(SOCNiBu2)3, In(S2CNMeHex)3 and Ga(S2CNMeR)3, (R = Et, Bu, Hex) have been prepared and used for the deposition of Group 13 metal sulfide thin films. The α and β-In2S3thin films on borosilicate glass and oc-Ga 2S3thin films on GaAs(111) single crystal substrates were prepared from the precursors by various chemical vapour deposition (CVD) techniques. These semicondcuting materials have been characterized by XRD, SEM, XPS and EDAX.

scholarly journals Combining single source chemical vapour deposition precursors to explore the phase space of titanium oxynitride thin films

2018 ◽  
Vol 47 (31) ◽  
pp. 10536-10543 ◽  
Author(s):  
Kelly Rees ◽  
Emanuela Lorusso ◽  
Samuel D. Cosham ◽  
Alexander N. Kulak ◽  
Geoffrey Hyett
Keyword(s):  
Thin Films ◽  
Phase Space ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Single Source ◽  
Single Source Precursors

Combining single-source precursors in aerosol assisted CVD allows control of the composition of mixed anion titanium oxynitride thin films.

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