Growth of lead chalcogenide thin films using single-source precursors

2004 ◽  
Vol 14 (8) ◽  
pp. 1310 ◽  
Author(s):  
Mohammad Afzaal ◽  
Katie Ellwood ◽  
Nigel L. Pickett ◽  
Paul O'Brien ◽  
Jim Raftery ◽  
...  
2020 ◽  
Vol 2020 ◽  
pp. 1-7 ◽  
Author(s):  
Nathaniel Owusu Boadi ◽  
Selina Ama Saah ◽  
Johannes A. M. Awudza

A novel complex [Pb((SePiPr2)2N) (S2CNEt2)] has been synthesized and characterized by microelemental analysis, melting point NMR, and FT-IR spectroscopies. Its crystal structure has also been successfully determined using single-crystal X-ray crystallography. The structure indicates a distorted square pyramidal geometry with the four basal atoms being noncoplanar. The complex was used as a single-source precursor for the deposition of lead chalcogenide thin films on glass substrates at 300, 350, 400, and 450°C by AACVD. The films were characterized by SEM, EDX, and XRD. The XRD peaks matched with cubic PbSe at all temperatures. The SEM micrographs showed the formation of cubes with the lower temperatures (300–350°C) showing well-resolved cubes while with the higher temperatures (400–450°C) showing poorly resolved cubes. The EDX analyses confirmed the formation of PbSe thin films at all the deposition temperatures.


2006 ◽  
Vol 16 (10) ◽  
pp. 966-969 ◽  
Author(s):  
Shivram S. Garje ◽  
Jamie S. Ritch ◽  
Dana J. Eisler ◽  
Mohammad Afzaal ◽  
Paul O'Brien ◽  
...  

1999 ◽  
Vol 606 ◽  
Author(s):  
Mike R. Lazell ◽  
Paul O'brien ◽  
David J. Otway ◽  
Jin-Ho Park

AbstractSeveral single-source precursors including In(SOCNiBu2)3, In(S2CNMeHex)3 and Ga(S2CNMeR)3, (R = Et, Bu, Hex) have been prepared and used for the deposition of Group 13 metal sulfide thin films. The α and β-In2S3thin films on borosilicate glass and oc-Ga 2S3thin films on GaAs(111) single crystal substrates were prepared from the precursors by various chemical vapour deposition (CVD) techniques. These semicondcuting materials have been characterized by XRD, SEM, XPS and EDAX.


2018 ◽  
Vol 47 (31) ◽  
pp. 10536-10543 ◽  
Author(s):  
Kelly Rees ◽  
Emanuela Lorusso ◽  
Samuel D. Cosham ◽  
Alexander N. Kulak ◽  
Geoffrey Hyett

Combining single-source precursors in aerosol assisted CVD allows control of the composition of mixed anion titanium oxynitride thin films.


2018 ◽  
Vol 47 (7) ◽  
pp. 2406-2414 ◽  
Author(s):  
Yao-Pang Chang ◽  
Andrew L. Hector ◽  
William Levason ◽  
Gillian Reid ◽  
Joshua Whittam

A new series of Mo(iv) chloride complexes with thioether and seleneoether ligands is reported; [MoCl4(nBu2E)2] (E = S, Se) function as single source precursors for the CVD of MoE2thin films.


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