Ionic and p-type electronic transport in zircon-type Ce1 − xAxVO4 ± δ(A = Ca, Sr)

2002 ◽  
Vol 12 (12) ◽  
pp. 3738-3745 ◽  
Author(s):  
Ekaterina V. Tsipis ◽  
Mikhail V. Patrakeev ◽  
Vladislav V. Kharton ◽  
Nikolai P. Vyshatko ◽  
Jorge R. Frade
Keyword(s):  
Electronic Transport ◽  
P Type ◽  
Zircon Type

Electronic transport in p-type Mg-doped GaAs nanowires

2016 ◽  
Vol 253 (10) ◽  
pp. 1960-1964 ◽  
Author(s):  
N. Cifuentes ◽  
H. Limborço ◽  
E. R. Viana ◽  
D. B. Roa ◽  
A. Abelenda ◽  
...  
Keyword(s):  
Electronic Transport ◽  
Gaas Nanowires ◽  
P Type ◽  
Mg Doped

Electronic Transport Properties of Hot-Pressed B6Si

1987 ◽  
Vol 97 ◽  
Author(s):  
C. Wood ◽  
D. Emin ◽  
R. S. Feigelson ◽  
I. D. R. Mackinnon
Keyword(s):  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Transport Properties ◽  
Electronic Transport ◽  
Hall Mobility ◽  
Anomalous Behavior ◽  
Nominal Composition ◽  
Electronic Transport Properties ◽  
Increasing Temperature ◽  
P Type

ABSTRACTMeasurements of the electrical conductivity, Seebeck coefficient and Hall mobility from -300 K to -1300 K have been carried out on multiphase hotpressed samples of the nominal composition B6Si. In all samples the conductivity and the p-type Seebeck coefficient both increase smoothly with increasing temperature. By themselves, these facts suggest small-polaronic hopping between inequivalent sites. The measured Hall mobilities are always low, but vary in sign. A possible explanation is offered for this anomalous behavior.

scholarly journals Gate-tunable electronic transport in p -type GaSb quantum wells

2019 ◽  
Vol 99 (11) ◽  
Author(s):  
Matija Karalic ◽  
Christopher Mittag ◽  
Michael Hug ◽  
Thomas Tschirky ◽  
Werner Wegscheider ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Electronic Transport ◽  
P Type

Electronic transport and Schottky barrier height of Ni contact on p-type GaN

2008 ◽  
Vol 41 (9) ◽  
pp. 095107 ◽  
Author(s):  
Yow-Jon Lin ◽  
Ching-Ting Lee ◽  
Shih-Sheng Chang ◽  
Hsing-Cheng Chang
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Electronic Transport ◽  
Schottky Barrier Height ◽  
P Type

A quantitative analysis of electronic transport in n- and p-type modulation-doped GaAsBi/AlGaAs quantum well structures

2021 ◽  
Author(s):  
Omer Donmez ◽  
Ayse Erol ◽  
Çağlar Çetinkaya ◽  
Erman Çokduygulular ◽  
Mustafa Aydın ◽  
...  
Keyword(s):  
Quantitative Analysis ◽  
Quantum Well ◽  
Electronic Transport ◽  
Quantum Well Structures ◽  
P Type

Electronic Transport Properties of Tin-Filled Cobalt Antimonides

2007 ◽  
Vol 26-28 ◽  
pp. 891-894
Author(s):  
Jae Yong Jung ◽  
Soon Chul Ur ◽  
Il Ho Kim
Keyword(s):  
Heat Treatment ◽  
Transport Properties ◽  
Electronic Transport ◽  
Single Phase ◽  
Induction Melting ◽  
Isothermal Heat Treatment ◽  
Degenerate Semiconductor ◽  
Lattice Contribution ◽  
Electronic Transport Properties ◽  
P Type

The encapsulated induction melting was attempted to prepare the Sn-filled CoSb3 skutterudites and their electronic transport properties were investigated. Single phase δ-CoSb3 was successfully obtained by the subsequent isothermal heat treatment at 823K for 6 days in vacuum. The Sn-filled CoSb3 showed p-type conductivity at 300K to 700K at it is a highly degenerate semiconductor. Lattice contribution was dominant to thermal conductivity and it was considerably reduced by Sn filling in the CoSb3 skutterudite.

Electronic transport in p-type doped GaAs nanowires

2016 ◽  
Author(s):  
N. Cifuentes ◽  
H. Limborco ◽  
M. V. B. Moreira ◽  
G. M. Ribeiro ◽  
A. G. de Oliveira ◽  
...  
Keyword(s):  
Electronic Transport ◽  
Gaas Nanowires ◽  
P Type
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