Racemic resolution of N-protected alanine by strychnine and brucine versus donor/acceptor capability

CrystEngComm ◽  
2004 ◽  
Vol 6 (47) ◽  
pp. 276-279 ◽  
Author(s):  
Agata Białońska ◽  
Zbigniew Ciunik
Keyword(s):  
Donor Acceptor ◽  
Racemic Resolution

Analysis of time-resolved donor-acceptor-pair spectra of ZnSe : Li and ZnSe : N

1998 ◽  
Vol 184-185 (1-2) ◽  
pp. 531-535
Author(s):  
P Bäume
Keyword(s):  
Acceptor Pair ◽  
Time Resolved ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

Approaches to empirical donor-acceptor and polarity-parameters of polymers in solution and at interfaces

1992 ◽  
Vol 89 ◽  
pp. 1615-1622 ◽  
Author(s):  
S Spange ◽  
D Keutel ◽  
F Simon
Keyword(s):  
Donor Acceptor ◽  
Polarity Parameters

Evidence of a donor-acceptor type transition in CuGaSe2

1980 ◽  
Vol 41 (7) ◽  
pp. 707-712 ◽  
Author(s):  
A. Poure ◽  
G. Aguero ◽  
G. Masse ◽  
J.P. Aicardi
Keyword(s):  
Type Transition ◽  
Donor Acceptor

NET PHOTOSYNTHESIS AND EAR GRAIN CONTENT IN THE VARIETIES OF SPRING WHEAT UNDER THE INFLUENCE OF DONOR-ACCEPTOR RELATIONS

2012 ◽  
pp. 66-71
Author(s):  
E.F. Ionov ◽  
◽  
N.E. Ionova ◽  
V.A. Dragavtsev ◽  
◽  
...  
Keyword(s):  
Spring Wheat ◽  
Net Photosynthesis ◽  
Donor Acceptor

Photoactive donor-acceptor thin films as prospective materials for evaporated bulk heterojunctions of molecular semiconductors

2008 ◽  
Author(s):  
Derck Schlettwein ◽  
Robin Knecht ◽  
Dominik Klaus ◽  
Christopher Keil ◽  
Günter Schnurpfeil
Keyword(s):  
Thin Films ◽  
Bulk Heterojunctions ◽  
Donor Acceptor ◽  
Molecular Semiconductors

A New Deep Acceptor in Epitaxial Cubic SiC

1989 ◽  
Vol 162 ◽  
Author(s):  
J. A. Freitas ◽  
S. G. Bishop
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Excitation Intensity ◽  
Acceptor Pair ◽  
Deep Acceptor ◽  
Intensity Dependence ◽  
Pl Spectra ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

ABSTRACTThe temperature and excitation intensity dependence of photoluminescence (PL) spectra have been studied in thin films of SiC grown by chemical vapor deposition on Si (100) substrates. The low power PL spectra from all samples exhibited a donor-acceptor pair PL band which involves a previously undetected deep acceptor whose binding energy is approximately 470 meV. This deep acceptor is found in every sample studied independent of growth reactor, suggesting the possibility that this background acceptor is at least partially responsible for the high compensation observed in Hall effect studies of undoped films of cubic SiC.

Quantum Dot Bioconjugates as Energy Donors in Fluorescence Resonance Energy Transfer Assays

2003 ◽  
Vol 773 ◽  
Author(s):  
Aaron R. Clapp ◽  
Igor L. Medintz ◽  
J. Matthew Mauro ◽  
Hedi Mattoussi
Keyword(s):  
Energy Transfer ◽  
Quantum Dot ◽  
Organic Dyes ◽  
Resonance Energy Transfer ◽  
Resonance Energy ◽  
Genetically Engineered ◽  
Molar Ratio ◽  
Binding Assays ◽  
Specific Sequence ◽  
Donor Acceptor

AbstractLuminescent CdSe-ZnS core-shell quantum dot (QD) bioconjugates were used as energy donors in fluorescent resonance energy transfer (FRET) binding assays. The QDs were coated with saturating amounts of genetically engineered maltose binding protein (MBP) using a noncovalent immobilization process, and Cy3 organic dyes covalently attached at a specific sequence to MBP were used as energy acceptor molecules. Energy transfer efficiency was measured as a function of the MBP-Cy3/QD molar ratio for two different donor fluorescence emissions (different QD core sizes). Apparent donor-acceptor distances were determined from these FRET studies, and the measured distances are consistent with QD-protein conjugate dimensions previously determined from structural studies.

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