Conformational changes in complex macromolecules studied by single donor–acceptor pair fluorescence

2013 ◽  
Vol 15 (38) ◽  
pp. 16190 ◽  
Author(s):  
Igor S. Osad'ko
Keyword(s):  
Conformational Changes ◽  
Acceptor Pair ◽  
Single Donor ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

Photon-Induced Random Telegraph Signal Due to Potential Fluctuation of a Single Donor–Acceptor Pair in Nanoscale Si p–n Junctions

2012 ◽  
Vol 5 (11) ◽  
pp. 112201 ◽  
Author(s):  
Arief Udhiarto ◽  
Daniel Moraru ◽  
Sri Purwiyanti ◽  
Youhei Kuzuya ◽  
Takeshi Mizuno ◽  
...  
Keyword(s):  
Acceptor Pair ◽  
Random Telegraph Signal ◽  
Potential Fluctuation ◽  
Single Donor ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

A New Deep Acceptor in Epitaxial Cubic SiC

1989 ◽  
Vol 162 ◽  
Author(s):  
J. A. Freitas ◽  
S. G. Bishop
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Excitation Intensity ◽  
Acceptor Pair ◽  
Deep Acceptor ◽  
Intensity Dependence ◽  
Pl Spectra ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

ABSTRACTThe temperature and excitation intensity dependence of photoluminescence (PL) spectra have been studied in thin films of SiC grown by chemical vapor deposition on Si (100) substrates. The low power PL spectra from all samples exhibited a donor-acceptor pair PL band which involves a previously undetected deep acceptor whose binding energy is approximately 470 meV. This deep acceptor is found in every sample studied independent of growth reactor, suggesting the possibility that this background acceptor is at least partially responsible for the high compensation observed in Hall effect studies of undoped films of cubic SiC.

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