Influence of triplet states on single donor-acceptor pair fluorescence

2019 ◽  
Vol 525 ◽  
pp. 110401
Author(s):  
I.S Osad'ko
Keyword(s):  
Triplet States ◽  
Acceptor Pair ◽  
Single Donor ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

Photon-Induced Random Telegraph Signal Due to Potential Fluctuation of a Single Donor–Acceptor Pair in Nanoscale Si p–n Junctions

2012 ◽  
Vol 5 (11) ◽  
pp. 112201 ◽  
Author(s):  
Arief Udhiarto ◽  
Daniel Moraru ◽  
Sri Purwiyanti ◽  
Youhei Kuzuya ◽  
Takeshi Mizuno ◽  
...  
Keyword(s):  
Acceptor Pair ◽  
Random Telegraph Signal ◽  
Potential Fluctuation ◽  
Single Donor ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

A New Deep Acceptor in Epitaxial Cubic SiC

1989 ◽  
Vol 162 ◽  
Author(s):  
J. A. Freitas ◽  
S. G. Bishop
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Excitation Intensity ◽  
Acceptor Pair ◽  
Deep Acceptor ◽  
Intensity Dependence ◽  
Pl Spectra ◽  
Donor Acceptor ◽  
Donor Acceptor Pair

ABSTRACTThe temperature and excitation intensity dependence of photoluminescence (PL) spectra have been studied in thin films of SiC grown by chemical vapor deposition on Si (100) substrates. The low power PL spectra from all samples exhibited a donor-acceptor pair PL band which involves a previously undetected deep acceptor whose binding energy is approximately 470 meV. This deep acceptor is found in every sample studied independent of growth reactor, suggesting the possibility that this background acceptor is at least partially responsible for the high compensation observed in Hall effect studies of undoped films of cubic SiC.

scholarly journals Time-resolved Spectroscopy of the violet luminescence of undoped AlN

2005 ◽  
Vol 10 ◽  
Author(s):  
R. Freitag ◽  
K. Thonke ◽  
R. Sauer ◽  
D. G. Ebling ◽  
L. Steinke
Keyword(s):  
Epitaxial Layers ◽  
Yellow Luminescence ◽  
Acceptor Pair ◽  
Time Resolved ◽  
Time Resolved Spectroscopy ◽  
Violet Luminescence ◽  
Donor Acceptor ◽  
Violet Band ◽  
Donor Acceptor Pair

We report on the time-resolved luminescence of the defect-related violet band from undoped AlN epitaxial layers grown on sapphire and SiC. For both measurements in photoluminescence and in cathodoluminescence a decay of algebraic nature at long times is observed. This is typical for donor-acceptor pair transitions. We compare the behavior of this band to that of the generically yellow luminescence of GaN.

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