Nanopore-type black silicon anti-reflection layers fabricated by a one-step silver-assisted chemical etching

2013 ◽  
Vol 15 (24) ◽  
pp. 9862 ◽  
Author(s):  
Yen-Tien Lu ◽  
Andrew R. Barron
Keyword(s):  
Chemical Etching ◽  
Black Silicon ◽  
One Step

Influence of Etching Regimes on the Reflectance of Black Silicon Films Formed by Ni-Assisted Chemical Etching

2019 ◽  
Vol 806 ◽  
pp. 24-29 ◽  
Author(s):  
Olga V. Volovlikova ◽  
S.A. Gavrilov ◽  
P.I. Lazarenko ◽  
A.V. Kukin ◽  
A.A. Dudin ◽  
...  
Keyword(s):  
Refractive Index ◽  
Treatment Duration ◽  
Chemical Etching ◽  
Visible Region ◽  
High Light ◽  
Silicon Films ◽  
Black Silicon ◽  
Metal Assisted Chemical Etching ◽  
Light Absorptance

This paper examines the influence of etching regimes on the reflectance of black silicon formed by Ni-assisted chemical etching. Black silicon exhibits properties of high light absorptance. The measured minimum values of the reflectance (R-min) of black silicon with thickness of 580 nm formed by metal-assisted chemical etching (MACE) for 60 minutes at 460 lx illumination were 2,3% in the UV region (200–400 nm), 0,5% in the visible region (400–750 nm) and 0,3% in the IR region (750–1300 nm). The findings showed that the reflectance of black silicon depends on its thickness, illumination and treatment duration. In addition, the porosity and refractive index were calculated.

Fabrication of black silicon by Ni assisted chemical etching

2018 ◽  
Vol 5 (1) ◽  
pp. 015020 ◽  
Author(s):  
Kai Gao ◽  
Honglie Shen ◽  
Youwen Liu ◽  
Quntao Tang ◽  
Ye Jiang ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Black Silicon

Synthesis of Silicon Nanowire Arrays by Metal-Assisted Chemical Etching in Aqueous NH4HF2 Solution

2012 ◽  
Vol 21 ◽  
pp. 109-115 ◽  
Author(s):  
S. Naama ◽  
T. Hadjersi ◽  
G. Nezzal ◽  
L. Guerbous
Keyword(s):  
Silicon Nanowires ◽  
Chemical Etching ◽  
Silicon Nanowire ◽  
Nanowire Arrays ◽  
Etching Time ◽  
Silicon Nanowire Arrays ◽  
Peak Intensity ◽  
One Step ◽  
Etching Parameters ◽  
P Type

One-step metal-assisted electroless chemical etching of p-type silicon substrate in NH4HF2/AgNO3 solution was investigated. The effect of different etching parameters including etching time, temperature, AgNO3 concentration and NH4HF2 concentration were investigated. The etched layers formed were investigated by scanning electron microscopy (SEM) and Photoluminescence. It was found that the etched layer was formed by well-aligned silicon nanowires. It is noted that their density and length strongly depend on etching parameters. Room temperature photoluminescence (PL) from etched layer was observed. It was observed that PL peak intensity increases significantly with AgNO3 concentration.

Enhanced etching rate of black silicon by Cu/Ni Co-assisted chemical etching process

2018 ◽  
Vol 88 ◽  
pp. 250-255 ◽  
Author(s):  
Kai Gao ◽  
Honglie Shen ◽  
Youwen Liu ◽  
Ye Jiang ◽  
Chaofan Zheng ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Etching Rate ◽  
Etching Process ◽  
Black Silicon
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